JPS6075589A - ドライエツチング装置 - Google Patents
ドライエツチング装置Info
- Publication number
- JPS6075589A JPS6075589A JP18270483A JP18270483A JPS6075589A JP S6075589 A JPS6075589 A JP S6075589A JP 18270483 A JP18270483 A JP 18270483A JP 18270483 A JP18270483 A JP 18270483A JP S6075589 A JPS6075589 A JP S6075589A
- Authority
- JP
- Japan
- Prior art keywords
- anode
- cathode
- sample
- magnet
- dry etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001312 dry etching Methods 0.000 title claims description 14
- 238000005530 etching Methods 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims description 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims 1
- 150000002910 rare earth metals Chemical group 0.000 claims 1
- 238000001816 cooling Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 230000006866 deterioration Effects 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 239000000498 cooling water Substances 0.000 abstract 1
- 230000007423 decrease Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18270483A JPS6075589A (ja) | 1983-09-30 | 1983-09-30 | ドライエツチング装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18270483A JPS6075589A (ja) | 1983-09-30 | 1983-09-30 | ドライエツチング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6075589A true JPS6075589A (ja) | 1985-04-27 |
| JPH0534433B2 JPH0534433B2 (enrdf_load_stackoverflow) | 1993-05-24 |
Family
ID=16122974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18270483A Granted JPS6075589A (ja) | 1983-09-30 | 1983-09-30 | ドライエツチング装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6075589A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62169418A (ja) * | 1986-01-22 | 1987-07-25 | Toshiba Corp | ドライエツチング装置 |
| JPS62204529A (ja) * | 1986-03-05 | 1987-09-09 | Toshiba Corp | 反応性イオンエッチング方法 |
| JPS63104332A (ja) * | 1986-10-06 | 1988-05-09 | エム シー エヌ シー | プラズマ加工方法及び装置 |
| JPH01220445A (ja) * | 1988-02-29 | 1989-09-04 | Tel Sagami Ltd | プラズマ処理装置 |
| EP0476609B1 (en) * | 1990-09-19 | 1995-10-11 | TDK Corporation | Permanent magnet magnetic circuit |
-
1983
- 1983-09-30 JP JP18270483A patent/JPS6075589A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62169418A (ja) * | 1986-01-22 | 1987-07-25 | Toshiba Corp | ドライエツチング装置 |
| JPS62204529A (ja) * | 1986-03-05 | 1987-09-09 | Toshiba Corp | 反応性イオンエッチング方法 |
| JPS63104332A (ja) * | 1986-10-06 | 1988-05-09 | エム シー エヌ シー | プラズマ加工方法及び装置 |
| JPH01220445A (ja) * | 1988-02-29 | 1989-09-04 | Tel Sagami Ltd | プラズマ処理装置 |
| EP0476609B1 (en) * | 1990-09-19 | 1995-10-11 | TDK Corporation | Permanent magnet magnetic circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0534433B2 (enrdf_load_stackoverflow) | 1993-05-24 |
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