JPH0530301B2 - - Google Patents

Info

Publication number
JPH0530301B2
JPH0530301B2 JP60045139A JP4513985A JPH0530301B2 JP H0530301 B2 JPH0530301 B2 JP H0530301B2 JP 60045139 A JP60045139 A JP 60045139A JP 4513985 A JP4513985 A JP 4513985A JP H0530301 B2 JPH0530301 B2 JP H0530301B2
Authority
JP
Japan
Prior art keywords
magnetic field
cathode
plasma processing
processing apparatus
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60045139A
Other languages
English (en)
Japanese (ja)
Other versions
JPS611025A (ja
Inventor
Haruo Okano
Yasuhiro Horiike
Akihira Morishita
Teruo Azusawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP4513985A priority Critical patent/JPS611025A/ja
Publication of JPS611025A publication Critical patent/JPS611025A/ja
Publication of JPH0530301B2 publication Critical patent/JPH0530301B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP4513985A 1985-03-07 1985-03-07 プラズマ処理装置 Granted JPS611025A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4513985A JPS611025A (ja) 1985-03-07 1985-03-07 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4513985A JPS611025A (ja) 1985-03-07 1985-03-07 プラズマ処理装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP1779684A Division JPS60163433A (ja) 1984-02-03 1984-02-03 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS611025A JPS611025A (ja) 1986-01-07
JPH0530301B2 true JPH0530301B2 (enrdf_load_stackoverflow) 1993-05-07

Family

ID=12710947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4513985A Granted JPS611025A (ja) 1985-03-07 1985-03-07 プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS611025A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62263637A (ja) * 1986-05-12 1987-11-16 Ulvac Corp マグネトロンエツチング装置
JPS6333825A (ja) * 1986-07-28 1988-02-13 Nec Corp プラズマ化学気相成長装置
JP2628529B2 (ja) * 1988-02-24 1997-07-09 東京エレクトロン株式会社 プラズマｃｖｄ装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927212B2 (ja) * 1979-09-25 1984-07-04 三菱電機株式会社 プラズマ反応装置
JPS57159025A (en) * 1981-03-27 1982-10-01 Toshiba Corp Method and device for dry etching
JPS5825236A (ja) * 1981-08-07 1983-02-15 Mitsubishi Electric Corp ドライエツチング装置
JPS5867870A (ja) * 1981-10-20 1983-04-22 World Eng Kk 磁界圧着マグネトロン形高速プラズマエッチングおよび反応性イオンエッチング装置

Also Published As

Publication number Publication date
JPS611025A (ja) 1986-01-07

Similar Documents

Publication Publication Date Title
US4610770A (en) Method and apparatus for sputtering
JP3020580B2 (ja) マイクロ波プラズマ処理装置
US5330606A (en) Plasma source for etching
JPS59175125A (ja) ドライエツチング装置
EP0054201A2 (en) Dry etching device and method
US5345145A (en) Method and apparatus for generating highly dense uniform plasma in a high frequency electric field
JPS5816078A (ja) プラズマエツチング装置
JP3311064B2 (ja) プラズマ生成装置、表面処理装置および表面処理方法
WO2001039559A1 (fr) Procede et appareil de traitement au plasma
JP4408987B2 (ja) スパッタ処理応用のプラズマ処理装置
JPH0530301B2 (enrdf_load_stackoverflow)
JPH05102083A (ja) ドライエツチング方法及びそのための装置
JPS60163433A (ja) プラズマ処理装置
JPS6129128A (ja) プラズマ処理装置
JPH0473288B2 (enrdf_load_stackoverflow)
JPS6075589A (ja) ドライエツチング装置
JPH02312231A (ja) ドライエッチング装置
JPS62235484A (ja) 薄膜装置
KR970010266B1 (ko) 플라즈마 발생방법 및 그 장치
JPS6182434A (ja) プラズマ処理装置
JPH0578171B2 (enrdf_load_stackoverflow)
JP3077144B2 (ja) 試料保持装置
JPH0234427B2 (enrdf_load_stackoverflow)
JPH0626197B2 (ja) ドライエッチング装置
JP2877398B2 (ja) ドライエッチング装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term