JPS6075589A - ドライエツチング装置 - Google Patents

ドライエツチング装置

Info

Publication number
JPS6075589A
JPS6075589A JP18270483A JP18270483A JPS6075589A JP S6075589 A JPS6075589 A JP S6075589A JP 18270483 A JP18270483 A JP 18270483A JP 18270483 A JP18270483 A JP 18270483A JP S6075589 A JPS6075589 A JP S6075589A
Authority
JP
Japan
Prior art keywords
anode
cathode
sample
magnet
dry etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18270483A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0534433B2 (cs
Inventor
Haruo Okano
晴雄 岡野
Yasuhiro Horiike
靖浩 堀池
Takashi Yamazaki
隆 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP18270483A priority Critical patent/JPS6075589A/ja
Publication of JPS6075589A publication Critical patent/JPS6075589A/ja
Publication of JPH0534433B2 publication Critical patent/JPH0534433B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
JP18270483A 1983-09-30 1983-09-30 ドライエツチング装置 Granted JPS6075589A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18270483A JPS6075589A (ja) 1983-09-30 1983-09-30 ドライエツチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18270483A JPS6075589A (ja) 1983-09-30 1983-09-30 ドライエツチング装置

Publications (2)

Publication Number Publication Date
JPS6075589A true JPS6075589A (ja) 1985-04-27
JPH0534433B2 JPH0534433B2 (cs) 1993-05-24

Family

ID=16122974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18270483A Granted JPS6075589A (ja) 1983-09-30 1983-09-30 ドライエツチング装置

Country Status (1)

Country Link
JP (1) JPS6075589A (cs)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62169418A (ja) * 1986-01-22 1987-07-25 Toshiba Corp ドライエツチング装置
JPS62204529A (ja) * 1986-03-05 1987-09-09 Toshiba Corp 反応性イオンエッチング方法
JPS63104332A (ja) * 1986-10-06 1988-05-09 エム　シー　エヌ　シー プラズマ加工方法及び装置
JPH01220445A (ja) * 1988-02-29 1989-09-04 Tel Sagami Ltd プラズマ処理装置
EP0476609B1 (en) * 1990-09-19 1995-10-11 TDK Corporation Permanent magnet magnetic circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62169418A (ja) * 1986-01-22 1987-07-25 Toshiba Corp ドライエツチング装置
JPS62204529A (ja) * 1986-03-05 1987-09-09 Toshiba Corp 反応性イオンエッチング方法
JPS63104332A (ja) * 1986-10-06 1988-05-09 エム　シー　エヌ　シー プラズマ加工方法及び装置
JPH01220445A (ja) * 1988-02-29 1989-09-04 Tel Sagami Ltd プラズマ処理装置
EP0476609B1 (en) * 1990-09-19 1995-10-11 TDK Corporation Permanent magnet magnetic circuit

Also Published As

Publication number Publication date
JPH0534433B2 (cs) 1993-05-24

Similar Documents

Publication Publication Date Title
US4526643A (en) Dry etching apparatus using reactive ions
US4609428A (en) Method and apparatus for microwave plasma anisotropic dry etching
US6902683B1 (en) Plasma processing apparatus and plasma processing method
JPS5816078A (ja) プラズマエツチング装置
US20030054647A1 (en) Plasma processing method
JPS59140375A (ja) 反応スパッタリング装置およびマグネトロン電極装置
JPS58151028A (ja) 磁気的に強められたプラズマ処理方法および装置
JP2000223299A (ja) プラズマ源
US20030109092A1 (en) Surface smoothing device and method thereof
US6504159B1 (en) SOI plasma source ion implantation
JPS6075589A (ja) ドライエツチング装置
JPH05102083A (ja) ドライエツチング方法及びそのための装置
JPH0473288B2 (cs)
JP4554117B2 (ja) 表面処理装置
JP2674995B2 (ja) 基板処理方法およびその装置
JPS6063388A (ja) ドライエツチング装置
JPS62235484A (ja) 薄膜装置
JP2929149B2 (ja) プラズマ装置
KR102617710B1 (ko) 기판 처리장치
JPS5848421A (ja) ドライエツチング装置
JPH0530301B2 (cs)
JP3624986B2 (ja) ビーム加工方法及び装置
JP2777657B2 (ja) プラズマ付着装置
JP2606551B2 (ja) 中性粒子ビームエッチング装置
JPH06342698A (ja) 回転磁場を用いた２周波励起プラズマ装置