JPS6071589A - 単結晶の製造方法 - Google Patents
単結晶の製造方法Info
- Publication number
- JPS6071589A JPS6071589A JP18121483A JP18121483A JPS6071589A JP S6071589 A JPS6071589 A JP S6071589A JP 18121483 A JP18121483 A JP 18121483A JP 18121483 A JP18121483 A JP 18121483A JP S6071589 A JPS6071589 A JP S6071589A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- diameter
- floating zone
- molten liquid
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000002994 raw material Substances 0.000 claims abstract description 6
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 5
- 150000002367 halogens Chemical class 0.000 claims abstract description 5
- 230000003287 optical effect Effects 0.000 claims abstract description 4
- 239000000155 melt Substances 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 abstract description 5
- 230000001276 controlling effect Effects 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18121483A JPS6071589A (ja) | 1983-09-29 | 1983-09-29 | 単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18121483A JPS6071589A (ja) | 1983-09-29 | 1983-09-29 | 単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6071589A true JPS6071589A (ja) | 1985-04-23 |
| JPH0534318B2 JPH0534318B2 (cg-RX-API-DMAC7.html) | 1993-05-21 |
Family
ID=16096818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18121483A Granted JPS6071589A (ja) | 1983-09-29 | 1983-09-29 | 単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6071589A (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5729569B2 (ja) * | 2010-03-31 | 2015-06-03 | 国立研究開発法人産業技術総合研究所 | 金属化合物結晶の製造方法および装飾品の製造方法 |
-
1983
- 1983-09-29 JP JP18121483A patent/JPS6071589A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5729569B2 (ja) * | 2010-03-31 | 2015-06-03 | 国立研究開発法人産業技術総合研究所 | 金属化合物結晶の製造方法および装飾品の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0534318B2 (cg-RX-API-DMAC7.html) | 1993-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5854115B2 (ja) | タンケツシヨウセイチヨウホウ | |
| JPS63242991A (ja) | 結晶径制御方法 | |
| JPS6071589A (ja) | 単結晶の製造方法 | |
| JPH0534317B2 (cg-RX-API-DMAC7.html) | ||
| JPS60103095A (ja) | 単結晶の製造方法 | |
| JPS63291891A (ja) | 単結晶の製造方法 | |
| JPS63291892A (ja) | 単結晶の製造方法 | |
| US5292486A (en) | Crystal pulling method and apparatus for the practice thereof | |
| JPS60221387A (ja) | 赤外線加熱単結晶製造装置 | |
| JP3521070B2 (ja) | 繊維状結晶製造装置 | |
| JPS60226489A (ja) | 赤外線集光加熱単結晶製造装置 | |
| JPH0354186A (ja) | 浮遊帯溶融装置 | |
| JPH0541598B2 (cg-RX-API-DMAC7.html) | ||
| JP7746946B2 (ja) | 単結晶製造装置 | |
| JPH0541597B2 (cg-RX-API-DMAC7.html) | ||
| JPH11130585A (ja) | 単結晶引上装置 | |
| JPS60221386A (ja) | 赤外線集光加熱単結晶製造装置 | |
| JPS6321280A (ja) | 単結晶テール部の直径制御方法 | |
| JPH04130082A (ja) | 単結晶成長装置 | |
| JPH07172993A (ja) | ルチル単結晶の製造方法 | |
| JPS6121992A (ja) | 赤外線集光加熱単結晶製造装置 | |
| JPS60191093A (ja) | 単結晶の製造方法 | |
| JPS6197185A (ja) | 単結晶の製造方法 | |
| JPS6287482A (ja) | 単結晶製造装置 | |
| JPS60200888A (ja) | 赤外線加熱結晶製造における溶融帯径の制御方法 |