JPS6070442A - パタ−ン形成方法 - Google Patents

パタ−ン形成方法

Info

Publication number
JPS6070442A
JPS6070442A JP58178086A JP17808683A JPS6070442A JP S6070442 A JPS6070442 A JP S6070442A JP 58178086 A JP58178086 A JP 58178086A JP 17808683 A JP17808683 A JP 17808683A JP S6070442 A JPS6070442 A JP S6070442A
Authority
JP
Japan
Prior art keywords
sensitivity
copolymer
pmma
pattern
methylstyrene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58178086A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0377989B2 (enrdf_load_html_response
Inventor
Seiji Akimoto
誠司 秋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58178086A priority Critical patent/JPS6070442A/ja
Publication of JPS6070442A publication Critical patent/JPS6070442A/ja
Publication of JPH0377989B2 publication Critical patent/JPH0377989B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP58178086A 1983-09-28 1983-09-28 パタ−ン形成方法 Granted JPS6070442A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58178086A JPS6070442A (ja) 1983-09-28 1983-09-28 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58178086A JPS6070442A (ja) 1983-09-28 1983-09-28 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS6070442A true JPS6070442A (ja) 1985-04-22
JPH0377989B2 JPH0377989B2 (enrdf_load_html_response) 1991-12-12

Family

ID=16042378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58178086A Granted JPS6070442A (ja) 1983-09-28 1983-09-28 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS6070442A (enrdf_load_html_response)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2586831A1 (fr) * 1985-09-03 1987-03-06 Gen Electric Procede pour enlever une matiere organique selon un motif d'une pellicule organique
JPH01163737A (ja) * 1987-12-19 1989-06-28 Fujitsu Ltd レジスト材料
WO2023238559A1 (ja) * 2022-06-07 2023-12-14 栗田工業株式会社 解重合性共重合ポリマー
WO2025120950A1 (ja) * 2023-12-06 2025-06-12 栗田工業株式会社 解重合性共重合ポリマー

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52128132A (en) * 1976-04-20 1977-10-27 Fujitsu Ltd Positive type electron beam sensitive composition
JPS57161743A (en) * 1981-03-12 1982-10-05 Philips Nv Method of applying resist pattern on substrate and resist material mixture
JPS5848046A (ja) * 1981-09-17 1983-03-19 Matsushita Electric Ind Co Ltd 遠紫外線露光用レジスト材料
JPS5879062A (ja) * 1981-11-05 1983-05-12 Dainippon Printing Co Ltd 電子線硬化型コ−テイング剤
JPS58116532A (ja) * 1981-12-29 1983-07-11 Fujitsu Ltd パタ−ン形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52128132A (en) * 1976-04-20 1977-10-27 Fujitsu Ltd Positive type electron beam sensitive composition
JPS57161743A (en) * 1981-03-12 1982-10-05 Philips Nv Method of applying resist pattern on substrate and resist material mixture
JPS5848046A (ja) * 1981-09-17 1983-03-19 Matsushita Electric Ind Co Ltd 遠紫外線露光用レジスト材料
JPS5879062A (ja) * 1981-11-05 1983-05-12 Dainippon Printing Co Ltd 電子線硬化型コ−テイング剤
JPS58116532A (ja) * 1981-12-29 1983-07-11 Fujitsu Ltd パタ−ン形成方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2586831A1 (fr) * 1985-09-03 1987-03-06 Gen Electric Procede pour enlever une matiere organique selon un motif d'une pellicule organique
JPH01163737A (ja) * 1987-12-19 1989-06-28 Fujitsu Ltd レジスト材料
WO2023238559A1 (ja) * 2022-06-07 2023-12-14 栗田工業株式会社 解重合性共重合ポリマー
JP2023179310A (ja) * 2022-06-07 2023-12-19 栗田工業株式会社 解重合性共重合ポリマー
WO2025120950A1 (ja) * 2023-12-06 2025-06-12 栗田工業株式会社 解重合性共重合ポリマー
JP2025090960A (ja) * 2023-12-06 2025-06-18 栗田工業株式会社 解重合性共重合ポリマー

Also Published As

Publication number Publication date
JPH0377989B2 (enrdf_load_html_response) 1991-12-12

Similar Documents

Publication Publication Date Title
US4096290A (en) Resist mask formation process with haloalkyl methacrylate copolymers
US5403699A (en) Process for formation of resist patterns
JPS6070442A (ja) パタ−ン形成方法
US4348472A (en) Method of applying a layer in accordance with a pattern on a substrate, a negative resist material and a substrate coated with the resist
JP2000298345A5 (enrdf_load_html_response)
JPS5568630A (en) Pattern formation
JPS617835A (ja) レジスト材料
JPH087441B2 (ja) ポジ型高感度放射線感応性レジスト
JPS5912433A (ja) ドライ現像ポジ型レジスト組成物
JPH0332782B2 (enrdf_load_html_response)
JPH0377986B2 (enrdf_load_html_response)
JPS61120139A (ja) パタ−ン形成方法
JPH03182756A (ja) レジストパターンの形成方法
JPS6010249A (ja) パタ−ン形成方法
JPS60179737A (ja) ポジ型レジスト材料
JPS6010246A (ja) パタ−ン形成方法
JPS6134655B2 (enrdf_load_html_response)
JP2618978B2 (ja) レジスト材料およびこのレジスト材料を使用するパターン形成方法
JPS60254129A (ja) パタ−ン形成方法
JPH045178B2 (enrdf_load_html_response)
JPS62123451A (ja) 放射線感応性ネガ型レジスト材料
JPS6259950A (ja) 電離放射線感応ポジ型レジスト
JPH0377990B2 (enrdf_load_html_response)
JPH022563A (ja) レジスト及びパターン形成方法
JPH0562734B2 (enrdf_load_html_response)