JPS6068538A - Ｘ線発生装置 - Google Patents

Ｘ線発生装置

Info

Publication number
JPS6068538A
JPS6068538A JP58175517A JP17551783A JPS6068538A JP S6068538 A JPS6068538 A JP S6068538A JP 58175517 A JP58175517 A JP 58175517A JP 17551783 A JP17551783 A JP 17551783A JP S6068538 A JPS6068538 A JP S6068538A
Authority
JP
Japan
Prior art keywords
synchrotron radiation
electron
vertical direction
rays
ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58175517A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0372172B2 (enExample
Inventor
Takio Tomimasu
冨増　多喜夫
Tsutomu Noguchi
勉 野口
Hiroshi Yano
谷野　浩史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58175517A priority Critical patent/JPS6068538A/ja
Priority to US06/653,588 priority patent/US4631743A/en
Publication of JPS6068538A publication Critical patent/JPS6068538A/ja
Publication of JPH0372172B2 publication Critical patent/JPH0372172B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Particle Accelerators (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP58175517A 1983-09-22 1983-09-22 Ｘ線発生装置 Granted JPS6068538A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58175517A JPS6068538A (ja) 1983-09-22 1983-09-22 Ｘ線発生装置
US06/653,588 US4631743A (en) 1983-09-22 1984-09-24 X-ray generating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58175517A JPS6068538A (ja) 1983-09-22 1983-09-22 Ｘ線発生装置

Publications (2)

Publication Number Publication Date
JPS6068538A true JPS6068538A (ja) 1985-04-19
JPH0372172B2 JPH0372172B2 (enExample) 1991-11-15

Family

ID=15997433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58175517A Granted JPS6068538A (ja) 1983-09-22 1983-09-22 Ｘ線発生装置

Country Status (1)

Country Link
JP (1) JPS6068538A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6220316A (ja) * 1985-07-18 1987-01-28 Susumu Nanba 半導体ウエハの露光装置
US5923719A (en) * 1996-07-19 1999-07-13 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6220316A (ja) * 1985-07-18 1987-01-28 Susumu Nanba 半導体ウエハの露光装置
US5923719A (en) * 1996-07-19 1999-07-13 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method using the same

Also Published As

Publication number Publication date
JPH0372172B2 (enExample) 1991-11-15

Similar Documents

Publication Publication Date Title
KR100597037B1 (ko) 대전입자 리소그래피 장치용 투광시스템
US4631743A (en) X-ray generating apparatus
US6852985B2 (en) Method and apparatus for nanometer-scale focusing and patterning of ultra-low emittance, multi-MeV proton and ion beams from a laser ion diode
US20230375941A1 (en) Proximity effect correction in electron beam lithography
CN113433804B (zh) 极紫外光光刻方法和系统
EP0035556B1 (en) Electron beam system
JPH0372172B2 (enExample)
JP2002139758A (ja) 光短波長化装置
JPS6068539A (ja) Ｘ線発生装置
JPH021999A (ja) Ｘ線レーザ発生方法及び装置
US8178280B2 (en) Self-contained proximity effect correction inspiration for advanced lithography (special)
US5851725A (en) Exposure of lithographic resists by metastable rare gas atoms
Dyuzhev et al. Microfocus x-ray tubes with a silicon autoemission nanocathode as an x-ray source
JP3673431B2 (ja) リソグラフィ投影装置
JPH0527080B2 (enExample)
JPH0373093B2 (enExample)
Guo et al. Comparison of plasma source with synchrotron source in the Center for X-ray Lithography
Hÿtch et al. Semiconductor lithography and processing in the 1980s and 1990s
JPS60146500A (ja) シンクロトロン放射光発生装置
JPH04245615A (ja) Ｘ線縮小露光方法及びその装置
JP3390181B2 (ja) 高輝度集束イオンビームを用いた化合物の薄膜パターン生成方法
Piestrup et al. Single-stepper soft x-ray source for step-and-scan tools
Piestrup et al. A transition radiation source with a grazing angle optic for step and scan lithography
JP2000232060A (ja) 電子ビーム描画装置
Heuberger et al. X-ray lithography using synchrotron radiation and ion-beam shadow printing