JPS6068527A - 含浸型陰極 - Google Patents
含浸型陰極Info
- Publication number
- JPS6068527A JPS6068527A JP58176377A JP17637783A JPS6068527A JP S6068527 A JPS6068527 A JP S6068527A JP 58176377 A JP58176377 A JP 58176377A JP 17637783 A JP17637783 A JP 17637783A JP S6068527 A JPS6068527 A JP S6068527A
- Authority
- JP
- Japan
- Prior art keywords
- film
- impregnated
- impregnated cathode
- cathode
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 239000000956 alloy Substances 0.000 claims abstract description 11
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 11
- 238000002844 melting Methods 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 20
- 230000008018 melting Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 abstract description 14
- 229910052741 iridium Inorganic materials 0.000 abstract description 11
- 229910052762 osmium Inorganic materials 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 6
- 229910052702 rhenium Inorganic materials 0.000 abstract description 5
- 229910052707 ruthenium Inorganic materials 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- 238000007599 discharging Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910052788 barium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- IGUHATROZYFXKR-UHFFFAOYSA-N [W].[Ir] Chemical compound [W].[Ir] IGUHATROZYFXKR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/13—Solid thermionic cathodes
- H01J1/14—Solid thermionic cathodes characterised by the material
Landscapes
- Solid Thermionic Cathode (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58176377A JPS6068527A (ja) | 1983-09-26 | 1983-09-26 | 含浸型陰極 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58176377A JPS6068527A (ja) | 1983-09-26 | 1983-09-26 | 含浸型陰極 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6068527A true JPS6068527A (ja) | 1985-04-19 |
| JPH0135458B2 JPH0135458B2 (enrdf_load_stackoverflow) | 1989-07-25 |
Family
ID=16012565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58176377A Granted JPS6068527A (ja) | 1983-09-26 | 1983-09-26 | 含浸型陰極 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6068527A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61264625A (ja) * | 1985-05-20 | 1986-11-22 | Hitachi Ltd | 含浸形陰極 |
| US4928034A (en) * | 1986-06-06 | 1990-05-22 | Kabushiki Kaisha Toshiba | Impregnated cathode |
| US5459372A (en) * | 1991-06-13 | 1995-10-17 | Samsung Electron Devices Co., Ltd. | Impregnated cathode structure |
-
1983
- 1983-09-26 JP JP58176377A patent/JPS6068527A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61264625A (ja) * | 1985-05-20 | 1986-11-22 | Hitachi Ltd | 含浸形陰極 |
| US4928034A (en) * | 1986-06-06 | 1990-05-22 | Kabushiki Kaisha Toshiba | Impregnated cathode |
| US5459372A (en) * | 1991-06-13 | 1995-10-17 | Samsung Electron Devices Co., Ltd. | Impregnated cathode structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0135458B2 (enrdf_load_stackoverflow) | 1989-07-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |