JPS6063790A - 擬似スタティックメモリ - Google Patents

擬似スタティックメモリ

Info

Publication number
JPS6063790A
JPS6063790A JP58172533A JP17253383A JPS6063790A JP S6063790 A JPS6063790 A JP S6063790A JP 58172533 A JP58172533 A JP 58172533A JP 17253383 A JP17253383 A JP 17253383A JP S6063790 A JPS6063790 A JP S6063790A
Authority
JP
Japan
Prior art keywords
node
field effect
source
effect transistor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58172533A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0237037B2 (enrdf_load_stackoverflow
Inventor
Kazuo Nakaizumi
中泉　一雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58172533A priority Critical patent/JPS6063790A/ja
Publication of JPS6063790A publication Critical patent/JPS6063790A/ja
Publication of JPH0237037B2 publication Critical patent/JPH0237037B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Electronic Switches (AREA)
JP58172533A 1983-09-19 1983-09-19 擬似スタティックメモリ Granted JPS6063790A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58172533A JPS6063790A (ja) 1983-09-19 1983-09-19 擬似スタティックメモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58172533A JPS6063790A (ja) 1983-09-19 1983-09-19 擬似スタティックメモリ

Publications (2)

Publication Number Publication Date
JPS6063790A true JPS6063790A (ja) 1985-04-12
JPH0237037B2 JPH0237037B2 (enrdf_load_stackoverflow) 1990-08-22

Family

ID=15943669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58172533A Granted JPS6063790A (ja) 1983-09-19 1983-09-19 擬似スタティックメモリ

Country Status (1)

Country Link
JP (1) JPS6063790A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0237037B2 (enrdf_load_stackoverflow) 1990-08-22

Similar Documents

Publication Publication Date Title
KR100718429B1 (ko) 반도체 기억장치, 반도체 집적회로장치 및 휴대기기
US4682306A (en) Self-refresh control circuit for dynamic semiconductor memory device
JP2003178582A (ja) ダイナミックメモリのワード線駆動システム
JPH0786916A (ja) 半導体集積回路
KR0153847B1 (ko) 반도체 기억장치
JPS62165794A (ja) 連想記憶用メモリセル
US7512908B2 (en) Method and apparatus for improving SRAM cell stability by using boosted word lines
US6917536B1 (en) Memory access circuit and method for reading and writing data with the same clock signal
US5841718A (en) Use of voltage equalization in signal-sensing circuits
US6292418B1 (en) Semiconductor memory device
US5446694A (en) Semiconductor memory device
KR960013401B1 (ko) 스태틱 랜덤 억세스 메모리
US6377078B1 (en) Circuit to reduce charge sharing for domino circuits with pulsed clocks
US4451908A (en) Address Buffer
KR0136894B1 (ko) 반도체 메모리 장치의 버퍼 회로
JP3255159B2 (ja) 半導体集積回路
JPS6063790A (ja) 擬似スタティックメモリ
JP3224712B2 (ja) 論理＆レベル変換回路及び半導体装置
JP3255158B2 (ja) 半導体集積回路
JP2005032404A (ja) 半導体記憶装置、半導体集積回路装置、および携帯機器
US4435791A (en) CMOS Address buffer for a semiconductor memory
US6046949A (en) Semiconductor integrated circuit
CN116486848B (zh) 跟踪电流的本体电压产生器
JPH02156498A (ja) リフレッシュ機能内蔵ダイナミック型半導体記憶装置
JPH02146188A (ja) 同期式スタティックランダムアクセスメモリ