JPS6054996A - ダイヤモンドの合成法 - Google Patents

ダイヤモンドの合成法

Info

Publication number
JPS6054996A
JPS6054996A JP58164766A JP16476683A JPS6054996A JP S6054996 A JPS6054996 A JP S6054996A JP 58164766 A JP58164766 A JP 58164766A JP 16476683 A JP16476683 A JP 16476683A JP S6054996 A JPS6054996 A JP S6054996A
Authority
JP
Japan
Prior art keywords
diamond
substrate
microwave
gas
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58164766A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62120B2 (de
Inventor
Mutsukazu Kamo
加茂　睦和
Yoichiro Sato
洋一郎 佐藤
Seiichiro Matsumoto
精一郎 松本
Nobuo Sedaka
瀬高　信雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Research in Inorganic Material
Original Assignee
National Institute for Research in Inorganic Material
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute for Research in Inorganic Material filed Critical National Institute for Research in Inorganic Material
Priority to JP58164766A priority Critical patent/JPS6054996A/ja
Publication of JPS6054996A publication Critical patent/JPS6054996A/ja
Publication of JPS62120B2 publication Critical patent/JPS62120B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
JP58164766A 1983-09-07 1983-09-07 ダイヤモンドの合成法 Granted JPS6054996A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58164766A JPS6054996A (ja) 1983-09-07 1983-09-07 ダイヤモンドの合成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58164766A JPS6054996A (ja) 1983-09-07 1983-09-07 ダイヤモンドの合成法

Publications (2)

Publication Number Publication Date
JPS6054996A true JPS6054996A (ja) 1985-03-29
JPS62120B2 JPS62120B2 (de) 1987-01-06

Family

ID=15799517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58164766A Granted JPS6054996A (ja) 1983-09-07 1983-09-07 ダイヤモンドの合成法

Country Status (1)

Country Link
JP (1) JPS6054996A (de)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62198277U (de) * 1986-06-09 1987-12-17
US4940015A (en) * 1988-07-30 1990-07-10 Kabushiki Kaisha Kobe Seiko Sho Plasma reactor for diamond synthesis
US4984534A (en) * 1987-04-22 1991-01-15 Idemitsu Petrochemical Co., Ltd. Method for synthesis of diamond
WO1992005867A1 (fr) * 1990-10-01 1992-04-16 Idemitsu Petrochemical Company Limited Appareil de production de plasma par micro-ondes et procede de production de film diamante utilisant cet appareil
US5271971A (en) * 1987-03-30 1993-12-21 Crystallume Microwave plasma CVD method for coating a substrate with high thermal-conductivity diamond material
EP0839928A1 (de) * 1996-10-30 1998-05-06 Schott Glaswerke Remote-Plasma-CVD-Verfahren
KR100459531B1 (ko) * 2001-12-27 2004-12-04 박수길 마이크로웨이브 플라즈마 씨브이디에 의한 대결정다이아몬드 박막의 제조방법

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62198277U (de) * 1986-06-09 1987-12-17
JPH043007Y2 (de) * 1986-06-09 1992-01-31
US5271971A (en) * 1987-03-30 1993-12-21 Crystallume Microwave plasma CVD method for coating a substrate with high thermal-conductivity diamond material
US4984534A (en) * 1987-04-22 1991-01-15 Idemitsu Petrochemical Co., Ltd. Method for synthesis of diamond
US4940015A (en) * 1988-07-30 1990-07-10 Kabushiki Kaisha Kobe Seiko Sho Plasma reactor for diamond synthesis
WO1992005867A1 (fr) * 1990-10-01 1992-04-16 Idemitsu Petrochemical Company Limited Appareil de production de plasma par micro-ondes et procede de production de film diamante utilisant cet appareil
EP0839928A1 (de) * 1996-10-30 1998-05-06 Schott Glaswerke Remote-Plasma-CVD-Verfahren
US5985378A (en) * 1996-10-30 1999-11-16 Schott Glaswerke Remote-plasma-CVD method for coating or for treating large-surface substrates and apparatus for performing same
KR100459531B1 (ko) * 2001-12-27 2004-12-04 박수길 마이크로웨이브 플라즈마 씨브이디에 의한 대결정다이아몬드 박막의 제조방법

Also Published As

Publication number Publication date
JPS62120B2 (de) 1987-01-06

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