JPS6054447A - ホイ−トストンブリツジ回路による半導体デバイスの評価方法 - Google Patents

ホイ−トストンブリツジ回路による半導体デバイスの評価方法

Info

Publication number
JPS6054447A
JPS6054447A JP58162382A JP16238283A JPS6054447A JP S6054447 A JPS6054447 A JP S6054447A JP 58162382 A JP58162382 A JP 58162382A JP 16238283 A JP16238283 A JP 16238283A JP S6054447 A JPS6054447 A JP S6054447A
Authority
JP
Japan
Prior art keywords
bridge circuit
dif
pressure sensor
semiconductor device
wheatstone bridge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58162382A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0157499B2 (https=
Inventor
Kazuhiro Okada
和広 岡田
Naotake Ueda
上田　尚武
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Original Assignee
Fujikura Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd filed Critical Fujikura Ltd
Priority to JP58162382A priority Critical patent/JPS6054447A/ja
Publication of JPS6054447A publication Critical patent/JPS6054447A/ja
Publication of JPH0157499B2 publication Critical patent/JPH0157499B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
JP58162382A 1983-09-03 1983-09-03 ホイ−トストンブリツジ回路による半導体デバイスの評価方法 Granted JPS6054447A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58162382A JPS6054447A (ja) 1983-09-03 1983-09-03 ホイ−トストンブリツジ回路による半導体デバイスの評価方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58162382A JPS6054447A (ja) 1983-09-03 1983-09-03 ホイ−トストンブリツジ回路による半導体デバイスの評価方法

Publications (2)

Publication Number Publication Date
JPS6054447A true JPS6054447A (ja) 1985-03-28
JPH0157499B2 JPH0157499B2 (https=) 1989-12-06

Family

ID=15753513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58162382A Granted JPS6054447A (ja) 1983-09-03 1983-09-03 ホイ−トストンブリツジ回路による半導体デバイスの評価方法

Country Status (1)

Country Link
JP (1) JPS6054447A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001080305A3 (en) * 2000-04-17 2002-03-21 Univ Texas Electromigration early failure distribution in submicron interconnects

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001080305A3 (en) * 2000-04-17 2002-03-21 Univ Texas Electromigration early failure distribution in submicron interconnects

Also Published As

Publication number Publication date
JPH0157499B2 (https=) 1989-12-06

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