WO2001080305A3 - Electromigration early failure distribution in submicron interconnects - Google Patents

Electromigration early failure distribution in submicron interconnects Download PDF

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Publication number
WO2001080305A3
WO2001080305A3 PCT/US2001/012504 US0112504W WO0180305A3 WO 2001080305 A3 WO2001080305 A3 WO 2001080305A3 US 0112504 W US0112504 W US 0112504W WO 0180305 A3 WO0180305 A3 WO 0180305A3
Authority
WO
WIPO (PCT)
Prior art keywords
interconnects
lognormal
test structure
behavior
failure
Prior art date
Application number
PCT/US2001/012504
Other languages
French (fr)
Other versions
WO2001080305A2 (en
Inventor
Paul S Ho
Martin Gall
Original Assignee
Univ Texas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Texas filed Critical Univ Texas
Priority to AU2001253606A priority Critical patent/AU2001253606A1/en
Priority to CA002406371A priority patent/CA2406371A1/en
Priority to EP01927126A priority patent/EP1275145A2/en
Publication of WO2001080305A2 publication Critical patent/WO2001080305A2/en
Publication of WO2001080305A3 publication Critical patent/WO2001080305A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
    • G01R31/2858—Measuring of material aspects, e.g. electro-migration [EM], hot carrier injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2853—Electrical testing of internal connections or -isolation, e.g. latch-up or chip-to-lead connections
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Environmental & Geological Engineering (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)

Abstract

A test structure and a method for detecting early failures in a large ensemble of semiconductor elements, particularly applicable to on-chip interconnects, is provided. A novel approach to gain information about the statistical behavior of several thousand interconnects and to investigate possible deviations from perfect lognormal statistics is presented. A test structure having a Wheatstone Bridge arrangement and arrays of several hundred interconnects may be used to prove that failure data does not deviate from lognormal behavior down to a cumulative failure rate of approximately one out of 20,000. Typical test structure sizes may, therefore, be extended far beyond standard test procedures to gain information about the statistical behavior of failure mechanisms and to verify the validity of the assumption that failure mechanisms follow lognormal statistical behavior.
PCT/US2001/012504 2000-04-17 2001-04-17 Electromigration early failure distribution in submicron interconnects WO2001080305A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2001253606A AU2001253606A1 (en) 2000-04-17 2001-04-17 Electromigration early failure distribution in submicron interconnects
CA002406371A CA2406371A1 (en) 2000-04-17 2001-04-17 Electromigration early failure distribution in submicron interconnects
EP01927126A EP1275145A2 (en) 2000-04-17 2001-04-17 Electromigration early failure distribution in submicron interconnects

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US19791600P 2000-04-17 2000-04-17
US60/197,916 2000-04-17

Publications (2)

Publication Number Publication Date
WO2001080305A2 WO2001080305A2 (en) 2001-10-25
WO2001080305A3 true WO2001080305A3 (en) 2002-03-21

Family

ID=22731254

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/012504 WO2001080305A2 (en) 2000-04-17 2001-04-17 Electromigration early failure distribution in submicron interconnects

Country Status (5)

Country Link
US (1) US20020017906A1 (en)
EP (1) EP1275145A2 (en)
AU (1) AU2001253606A1 (en)
CA (1) CA2406371A1 (en)
WO (1) WO2001080305A2 (en)

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* Cited by examiner, † Cited by third party
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DE10227829A1 (en) * 2002-06-21 2004-01-15 Infineon Technologies Ag Method for monitoring the manufacture and for evaluating the quality of a metallization arrangement and associated detection device
US6724214B2 (en) * 2002-09-13 2004-04-20 Chartered Semiconductor Manufacturing Ltd. Test structures for on-chip real-time reliability testing
US6927080B1 (en) * 2002-10-28 2005-08-09 Advanced Micro Devices, Inc. Structures for analyzing electromigration, and methods of using same
EP1596210A1 (en) * 2004-05-11 2005-11-16 Interuniversitair Micro-Elektronica Centrum (IMEC) Method for lifetime determination of submicron metal interconnects
US7397260B2 (en) * 2005-11-04 2008-07-08 International Business Machines Corporation Structure and method for monitoring stress-induced degradation of conductive interconnects
US7818655B1 (en) * 2006-05-19 2010-10-19 Advanced Micro Devices, Inc. Method for quantitative detection of multiple electromigration failure modes
US20080246491A1 (en) * 2007-04-06 2008-10-09 Texas Instruments Incorporated Scalable method for identifying cracks and fractures under wired or ball bonded bond pads
FR2964749A1 (en) * 2010-09-14 2012-03-16 St Microelectronics Sa METHOD AND DEVICE FOR MEASURING THE RELIABILITY OF AN INTEGRATED CIRCUIT
US8754655B2 (en) 2011-08-11 2014-06-17 International Business Machines Corporation Test structure, method and circuit for simultaneously testing time dependent dielectric breakdown and electromigration or stress migration
US9768371B2 (en) 2012-03-08 2017-09-19 D-Wave Systems Inc. Systems and methods for fabrication of superconducting integrated circuits
CN103545293B (en) * 2012-07-10 2016-08-31 中芯国际集成电路制造(上海)有限公司 Polysilicon electro-migration testing structure and method of testing
CN104218026B (en) * 2013-06-05 2017-05-31 中芯国际集成电路制造(上海)有限公司 Semiconductor detection structure and detection method
US10684323B2 (en) 2015-05-11 2020-06-16 Robert Bosch Gmbh Assembly of strip conductors, device, and method for determining errors in a semiconductor circuit
US9817063B2 (en) 2016-02-19 2017-11-14 Globalfoundries Inc. Interconnect reliability structures
CN108257941B (en) * 2016-12-28 2020-05-12 无锡华润上华科技有限公司 Test structure and test method of semiconductor device
CN110462857B (en) * 2017-02-01 2024-02-27 D-波系统公司 System and method for manufacturing superconducting integrated circuits
US20200152851A1 (en) 2018-11-13 2020-05-14 D-Wave Systems Inc. Systems and methods for fabricating superconducting integrated circuits
DE102018222414A1 (en) * 2018-12-20 2020-06-25 Robert Bosch Gmbh Segmented power transistor with aging management
CN109742066B (en) * 2018-12-29 2020-11-20 上海华力集成电路制造有限公司 Electromigration test structure and test method
US12102017B2 (en) 2019-02-15 2024-09-24 D-Wave Systems Inc. Kinetic inductance for couplers and compact qubits

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054447A (en) * 1983-09-03 1985-03-28 Fujikura Ltd Evaluating method of semiconductor device by wheatstone bridge circuit
EP0484013A2 (en) * 1990-10-29 1992-05-06 AT&T Corp. Method for manufacturing an integrated circuit
US5264377A (en) * 1990-03-21 1993-11-23 At&T Bell Laboratories Integrated circuit electromigration monitor
JPH06216134A (en) * 1993-01-20 1994-08-05 Nippon Telegr & Teleph Corp <Ntt> Wiring for semiconductor integrated circuit and evaluation of resistance value thereof
US5514974A (en) * 1994-10-12 1996-05-07 International Business Machines Corporation Test device and method for signalling metal failure of semiconductor wafer
JPH10107109A (en) * 1996-09-26 1998-04-24 Matsushita Electric Works Ltd Semiconductor device and evaluation method thereof
US5760595A (en) * 1996-09-19 1998-06-02 International Business Machines Corporation High temperature electromigration stress test system, test socket, and use thereof
US6080597A (en) * 1998-11-04 2000-06-27 Lg Semicon Co., Ltd. Test pattern structure for measuring misalignment in semiconductor device fabrication process and method for measuring misalignment

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
LU86072A1 (en) * 1985-09-11 1987-04-02 Cobben Andree SURVEILLANCE BELT

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054447A (en) * 1983-09-03 1985-03-28 Fujikura Ltd Evaluating method of semiconductor device by wheatstone bridge circuit
US5264377A (en) * 1990-03-21 1993-11-23 At&T Bell Laboratories Integrated circuit electromigration monitor
EP0484013A2 (en) * 1990-10-29 1992-05-06 AT&T Corp. Method for manufacturing an integrated circuit
JPH06216134A (en) * 1993-01-20 1994-08-05 Nippon Telegr & Teleph Corp <Ntt> Wiring for semiconductor integrated circuit and evaluation of resistance value thereof
US5514974A (en) * 1994-10-12 1996-05-07 International Business Machines Corporation Test device and method for signalling metal failure of semiconductor wafer
US5760595A (en) * 1996-09-19 1998-06-02 International Business Machines Corporation High temperature electromigration stress test system, test socket, and use thereof
JPH10107109A (en) * 1996-09-26 1998-04-24 Matsushita Electric Works Ltd Semiconductor device and evaluation method thereof
US6080597A (en) * 1998-11-04 2000-06-27 Lg Semicon Co., Ltd. Test pattern structure for measuring misalignment in semiconductor device fabrication process and method for measuring misalignment

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 009, no. 185 (E - 332) 31 July 1985 (1985-07-31) *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 573 (E - 1624) 2 November 1994 (1994-11-02) *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 09 31 July 1998 (1998-07-31) *

Also Published As

Publication number Publication date
CA2406371A1 (en) 2001-10-25
WO2001080305A2 (en) 2001-10-25
US20020017906A1 (en) 2002-02-14
AU2001253606A1 (en) 2001-10-30
EP1275145A2 (en) 2003-01-15

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