JPS6051693A - ＧａＡｌＡｓ混晶単結晶成長方法とその装置 - Google Patents

ＧａＡｌＡｓ混晶単結晶成長方法とその装置

Info

Publication number
JPS6051693A
JPS6051693A JP15873383A JP15873383A JPS6051693A JP S6051693 A JPS6051693 A JP S6051693A JP 15873383 A JP15873383 A JP 15873383A JP 15873383 A JP15873383 A JP 15873383A JP S6051693 A JPS6051693 A JP S6051693A
Authority
JP
Japan
Prior art keywords
crystal
crystal growth
raw material
vessel
tank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15873383A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6357398B2 (enrdf_load_stackoverflow
Inventor
Toshio Sagawa
佐川　敏男
Tsunehiro Unno
恒弘 海野
Toshiya Toyoshima
豊島　敏也
Junkichi Nakagawa
中川　順吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP15873383A priority Critical patent/JPS6051693A/ja
Publication of JPS6051693A publication Critical patent/JPS6051693A/ja
Publication of JPS6357398B2 publication Critical patent/JPS6357398B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP15873383A 1983-08-30 1983-08-30 ＧａＡｌＡｓ混晶単結晶成長方法とその装置 Granted JPS6051693A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15873383A JPS6051693A (ja) 1983-08-30 1983-08-30 ＧａＡｌＡｓ混晶単結晶成長方法とその装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15873383A JPS6051693A (ja) 1983-08-30 1983-08-30 ＧａＡｌＡｓ混晶単結晶成長方法とその装置

Publications (2)

Publication Number Publication Date
JPS6051693A true JPS6051693A (ja) 1985-03-23
JPS6357398B2 JPS6357398B2 (enrdf_load_stackoverflow) 1988-11-11

Family

ID=15678138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15873383A Granted JPS6051693A (ja) 1983-08-30 1983-08-30 ＧａＡｌＡｓ混晶単結晶成長方法とその装置

Country Status (1)

Country Link
JP (1) JPS6051693A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01178440U (enrdf_load_stackoverflow) * 1988-06-08 1989-12-20
DE69122599T2 (de) * 1990-07-26 1997-04-03 Sumitomo Electric Industries Verfahren und gerät zur herstellung von einkristallen

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5550619A (en) * 1978-10-11 1980-04-12 Toshiba Corp Manufacturing single crystal
JPS5611675A (en) * 1979-07-04 1981-02-05 Marantz Japan Inc Key-touch strength changing circuit for automatic playing piano

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5550619A (en) * 1978-10-11 1980-04-12 Toshiba Corp Manufacturing single crystal
JPS5611675A (en) * 1979-07-04 1981-02-05 Marantz Japan Inc Key-touch strength changing circuit for automatic playing piano

Also Published As

Publication number Publication date
JPS6357398B2 (enrdf_load_stackoverflow) 1988-11-11

Similar Documents

Publication Publication Date Title
US7520930B2 (en) Silicon carbide single crystal and a method for its production
US5030315A (en) Methods of manufacturing compound semiconductor crystals and apparatus for the same
Tokairin et al. Formation mechanism of a faceted interface: In situ observation of the Si (100) crystal-melt interface during crystal growth
JPS6046075B2 (ja) 半導体化合物単結晶の成長法
JPS6345198A (ja) 多元系結晶の製造方法
EP0751242B1 (en) Process for bulk crystal growth
Deitch Liquid-phase epitaxial growth of gallium arsenide under transient thermal conditions
Kozuki et al. Metastable crystal growth of the low temperature phase of barium metaborate from the melt
JPS6051693A (ja) ＧａＡｌＡｓ混晶単結晶成長方法とその装置
EP0102054B1 (en) Method for growing gaas single crystal by using floating zone
US4906325A (en) Method of making single-crystal mercury cadmium telluride layers
US4909998A (en) Apparatus for performing solution growth of group II-VI compound semiconductor crystal
JP5428706B2 (ja) ＳｉＣ単結晶の製造方法
US4872943A (en) Process for making monocrystalline HGCDTE layers
JPH07165488A (ja) 結晶成長装置及び結晶成長方法
JP3532245B2 (ja) 混晶単結晶体の製造方法
JPH03126693A (ja) ２―６族化合物半導体結晶の製造方法
JPS6343333A (ja) 気相エピタキシヤル成長方法
JPS5820795A (ja) 単結晶育成方法
JP2873449B2 (ja) 化合物半導体浮遊帯融解単結晶成長方法
KR940009282B1 (ko) Zn doping에 의한 p-type GaAs단결정 성장방법
JPS62288186A (ja) 高蒸気圧成分を含む化合物半導体単結晶の製造方法
JPS6325292A (ja) 燐化インジウムガリウム混晶の結晶成長法
JP2885452B2 (ja) ▲ｉｉｉ▼―▲ｖ▼族化合物結晶のボート成長方法
JPS58209109A (ja) 化合物半導体結晶の成長方法