JPS6051082A - 固体撮像装置 - Google Patents

固体撮像装置

Info

Publication number
JPS6051082A
JPS6051082A JP59129162A JP12916284A JPS6051082A JP S6051082 A JPS6051082 A JP S6051082A JP 59129162 A JP59129162 A JP 59129162A JP 12916284 A JP12916284 A JP 12916284A JP S6051082 A JPS6051082 A JP S6051082A
Authority
JP
Japan
Prior art keywords
substrate
picture element
conductivity type
layer
conductive type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59129162A
Other languages
English (en)
Japanese (ja)
Other versions
JPS64869B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Masaaki Nakai
中井　正章
Shinya Oba
大場　信弥
Toshibumi Ozaki
俊文 尾崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59129162A priority Critical patent/JPS6051082A/ja
Publication of JPS6051082A publication Critical patent/JPS6051082A/ja
Publication of JPS64869B2 publication Critical patent/JPS64869B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP59129162A 1984-06-25 1984-06-25 固体撮像装置 Granted JPS6051082A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59129162A JPS6051082A (ja) 1984-06-25 1984-06-25 固体撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59129162A JPS6051082A (ja) 1984-06-25 1984-06-25 固体撮像装置

Publications (2)

Publication Number Publication Date
JPS6051082A true JPS6051082A (ja) 1985-03-22
JPS64869B2 JPS64869B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-01-09

Family

ID=15002674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59129162A Granted JPS6051082A (ja) 1984-06-25 1984-06-25 固体撮像装置

Country Status (1)

Country Link
JP (1) JPS6051082A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826485A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-08-11 1973-04-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826485A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-08-11 1973-04-07

Also Published As

Publication number Publication date
JPS64869B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-01-09

Similar Documents

Publication Publication Date Title
US4148048A (en) Solid-state imaging device
JP3403061B2 (ja) 固体撮像装置
CN1305229A (zh) 用于cmos图象传感器的优化浮置p+区光电二极管
JPH11274450A (ja) 固体撮像装置
US6136635A (en) Method for forming a bipolar-based active pixel sensor cell with poly contact and increased capacitive coupling to the base region
US7064362B2 (en) Photodetector of an image sensor
JPH05267695A (ja) 赤外線撮像装置
JPH11274461A (ja) 固体撮像装置とその製造方法
US4677453A (en) Solid state image sensor
JPS6051082A (ja) 固体撮像装置
JPH0691237B2 (ja) 固体撮像素子
JP2964571B2 (ja) 固体撮像素子
JPS6018957A (ja) 固体撮像素子
CN101471367B (zh) 图像传感器及其制造方法
JP2006147758A (ja) 固体撮像装置およびその製造方法
JP2906961B2 (ja) 固体撮像装置
JPS6393149A (ja) 固体撮像装置及びその製造方法
JPH10150180A (ja) 固体撮像装置
JP2846513B2 (ja) 固体撮像装置とその製造方法
JP2936826B2 (ja) 固体撮像装置
JP2006147757A (ja) 固体撮像装置およびその製造方法
JPS5917585B2 (ja) 固体撮像装置
JPH05145056A (ja) 固体撮像素子
JP2002368204A (ja) 固体撮像素子及びその製造方法
JPH05315584A (ja) 電荷転送固体撮像素子