JPS6047765B2 - 同調可能のマイクロ波発振器 - Google Patents
同調可能のマイクロ波発振器Info
- Publication number
- JPS6047765B2 JPS6047765B2 JP52021409A JP2140977A JPS6047765B2 JP S6047765 B2 JPS6047765 B2 JP S6047765B2 JP 52021409 A JP52021409 A JP 52021409A JP 2140977 A JP2140977 A JP 2140977A JP S6047765 B2 JPS6047765 B2 JP S6047765B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- base
- oscillator
- diode
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 20
- 230000000903 blocking effect Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 description 28
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 239000011295 pitch Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920002994 synthetic fiber Polymers 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
- H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
- H03B5/1847—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/0014—Structural aspects of oscillators
- H03B2200/002—Structural aspects of oscillators making use of ceramic material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/0014—Structural aspects of oscillators
- H03B2200/0022—Structural aspects of oscillators characterised by the substrate, e.g. material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/003—Circuit elements of oscillators
- H03B2200/0032—Circuit elements of oscillators including a device with a Schottky junction
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Superheterodyne Receivers (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2608451.5 | 1976-03-01 | ||
| DE2608451A DE2608451C2 (de) | 1976-03-01 | 1976-03-01 | Abstimmbarer Mikrowellenoszillator |
| DE2630992.2 | 1976-07-09 | ||
| DE2630992A DE2630992C2 (de) | 1976-07-09 | 1976-07-09 | Abstimmbarer Mikrowellenoszillator mit Mischstufe |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52106255A JPS52106255A (en) | 1977-09-06 |
| JPS6047765B2 true JPS6047765B2 (ja) | 1985-10-23 |
Family
ID=25770136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52021409A Expired JPS6047765B2 (ja) | 1976-03-01 | 1977-02-28 | 同調可能のマイクロ波発振器 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US4150344A (enExample) |
| JP (1) | JPS6047765B2 (enExample) |
| FR (1) | FR2343361A1 (enExample) |
| GB (1) | GB1572743A (enExample) |
| IT (1) | IT1076979B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0359962U (enExample) * | 1989-10-12 | 1991-06-12 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE33469E (en) * | 1981-08-14 | 1990-12-04 | Texas Instruments Incorporated | Monolithic microwave wide-band VCO |
| US4481487A (en) * | 1981-08-14 | 1984-11-06 | Texas Instruments Incorporated | Monolithic microwave wide-band VCO |
| US4458215A (en) * | 1981-08-17 | 1984-07-03 | Rca Corporation | Monolithic voltage controlled oscillator |
| US4507622A (en) * | 1982-11-29 | 1985-03-26 | Hazeltine Corporation | Oscillator utilizing inductive parameter of transistor |
| FR2561048B1 (fr) * | 1984-03-09 | 1986-09-19 | Thomson Csf | Oscillateur hyperfrequences a transistor, commande par capacite variable |
| US4630006A (en) * | 1985-05-31 | 1986-12-16 | Anderson Keith V | Current-tuned transistor oscillator |
| JPH04326608A (ja) * | 1991-04-26 | 1992-11-16 | Sumitomo Electric Ind Ltd | 発振回路 |
| GB2280558B (en) * | 1993-07-31 | 1998-04-15 | Plessey Semiconductors Ltd | Doppler microwave sensor |
| KR0153379B1 (ko) * | 1995-09-26 | 1998-11-16 | 김광호 | 디지탈 무선통신시스템의 업/다운컨버터용 전압제어발진기 |
| US6014064A (en) * | 1996-07-28 | 2000-01-11 | The Whitaker Corporation | Heterolithic voltage controlled oscillator |
| JP2000165142A (ja) * | 1998-11-25 | 2000-06-16 | Alps Electric Co Ltd | 発振回路 |
| US6504443B1 (en) | 2000-05-17 | 2003-01-07 | Nec America, Inc., | Common anode varactor tuned LC circuit |
| US6594478B1 (en) * | 2000-11-03 | 2003-07-15 | Motorola, Inc. | Self oscillating mixer |
| US6521506B1 (en) * | 2001-12-13 | 2003-02-18 | International Business Machines Corporation | Varactors for CMOS and BiCMOS technologies |
| AU2003228602A1 (en) | 2002-04-22 | 2003-11-03 | Cognio, Inc. | Multiple-input multiple-output radio transceiver |
| US6959178B2 (en) * | 2002-04-22 | 2005-10-25 | Ipr Licensing Inc. | Tunable upconverter mixer with image rejection |
| US7847669B2 (en) * | 2006-12-06 | 2010-12-07 | Georgia Tech Research Corporation | Micro-electromechanical switched tunable inductor |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2695357A (en) * | 1951-04-19 | 1954-11-23 | Rca Corp | Frequency conversion apparatus |
| US3244949A (en) * | 1962-03-16 | 1966-04-05 | Fairchild Camera Instr Co | Voltage regulator |
| US3141135A (en) * | 1962-05-11 | 1964-07-14 | Westinghouse Electric Corp | Semiconductive oscillator-mixer device |
| US3284723A (en) * | 1962-07-02 | 1966-11-08 | Westinghouse Electric Corp | Oscillatory circuit and monolithic semiconductor device therefor |
| DE1261191B (de) * | 1965-05-28 | 1968-02-15 | Philips Patentverwaltung | Mischschaltung |
| NL6511133A (enExample) * | 1965-08-26 | 1967-02-27 | ||
| US3421025A (en) * | 1966-03-18 | 1969-01-07 | Nat Semiconductor Corp | High-speed avalanche switching circuit |
| US3391351A (en) * | 1966-11-21 | 1968-07-02 | Bell Telephone Labor Inc | Circuits using a transistor operated into second breakdown region |
| FR1520890A (fr) * | 1967-03-24 | 1968-04-12 | Kruse Storke Electronics | Oscillateur accordé par une tension |
| US3639858A (en) * | 1968-08-31 | 1972-02-01 | Mitsumi Electric Co Ltd | Transistor impedance converter and oscillator circuits |
| US3836991A (en) * | 1970-11-09 | 1974-09-17 | Texas Instruments Inc | Semiconductor device having epitaxial region of predetermined thickness |
| US3693105A (en) * | 1971-01-18 | 1972-09-19 | Nasa | Active tuned circuit |
| US3886458A (en) * | 1972-12-12 | 1975-05-27 | Sony Corp | Frequency converter circuit with integrated injection capacitor |
| DE2334570B1 (de) * | 1973-07-07 | 1975-03-06 | Philips Patentverwaltung | Abstimmbare Hochfrequenz-Eingangsschaltungsanordnung fuer einen Fernsehempfaenger |
| JPS5718710B2 (enExample) * | 1974-05-10 | 1982-04-17 | ||
| US4010428A (en) * | 1975-09-15 | 1977-03-01 | Siemens Aktiengesellschaft | Transistor oscillator utilizing clapp circuit configuration for operation in the microwave band |
-
1977
- 1977-02-10 US US05/767,530 patent/US4150344A/en not_active Expired - Lifetime
- 1977-02-25 FR FR7705569A patent/FR2343361A1/fr active Granted
- 1977-02-25 IT IT20677/77A patent/IT1076979B/it active
- 1977-02-28 JP JP52021409A patent/JPS6047765B2/ja not_active Expired
- 1977-03-01 GB GB8467/77A patent/GB1572743A/en not_active Expired
-
1978
- 1978-10-25 US US05/954,587 patent/US4249262A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0359962U (enExample) * | 1989-10-12 | 1991-06-12 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52106255A (en) | 1977-09-06 |
| GB1572743A (en) | 1980-08-06 |
| FR2343361B1 (enExample) | 1982-03-05 |
| IT1076979B (it) | 1985-04-27 |
| US4150344A (en) | 1979-04-17 |
| US4249262A (en) | 1981-02-03 |
| FR2343361A1 (fr) | 1977-09-30 |
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