GB1572743A - Micro-wave oscillators - Google Patents

Micro-wave oscillators Download PDF

Info

Publication number
GB1572743A
GB1572743A GB8467/77A GB846777A GB1572743A GB 1572743 A GB1572743 A GB 1572743A GB 8467/77 A GB8467/77 A GB 8467/77A GB 846777 A GB846777 A GB 846777A GB 1572743 A GB1572743 A GB 1572743A
Authority
GB
United Kingdom
Prior art keywords
transistor
oscillator
diode
zone
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8467/77A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2608451A external-priority patent/DE2608451C2/de
Priority claimed from DE2630992A external-priority patent/DE2630992C2/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1572743A publication Critical patent/GB1572743A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
    • H03B5/1847—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/0014—Structural aspects of oscillators
    • H03B2200/002—Structural aspects of oscillators making use of ceramic material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/0014—Structural aspects of oscillators
    • H03B2200/0022—Structural aspects of oscillators characterised by the substrate, e.g. material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/003—Circuit elements of oscillators
    • H03B2200/0032—Circuit elements of oscillators including a device with a Schottky junction

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Superheterodyne Receivers (AREA)
GB8467/77A 1976-03-01 1977-03-01 Micro-wave oscillators Expired GB1572743A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2608451A DE2608451C2 (de) 1976-03-01 1976-03-01 Abstimmbarer Mikrowellenoszillator
DE2630992A DE2630992C2 (de) 1976-07-09 1976-07-09 Abstimmbarer Mikrowellenoszillator mit Mischstufe

Publications (1)

Publication Number Publication Date
GB1572743A true GB1572743A (en) 1980-08-06

Family

ID=25770136

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8467/77A Expired GB1572743A (en) 1976-03-01 1977-03-01 Micro-wave oscillators

Country Status (5)

Country Link
US (2) US4150344A (enExample)
JP (1) JPS6047765B2 (enExample)
FR (1) FR2343361A1 (enExample)
GB (1) GB1572743A (enExample)
IT (1) IT1076979B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE33469E (en) * 1981-08-14 1990-12-04 Texas Instruments Incorporated Monolithic microwave wide-band VCO
US4481487A (en) * 1981-08-14 1984-11-06 Texas Instruments Incorporated Monolithic microwave wide-band VCO
US4458215A (en) * 1981-08-17 1984-07-03 Rca Corporation Monolithic voltage controlled oscillator
US4507622A (en) * 1982-11-29 1985-03-26 Hazeltine Corporation Oscillator utilizing inductive parameter of transistor
FR2561048B1 (fr) * 1984-03-09 1986-09-19 Thomson Csf Oscillateur hyperfrequences a transistor, commande par capacite variable
US4630006A (en) * 1985-05-31 1986-12-16 Anderson Keith V Current-tuned transistor oscillator
JPH0359962U (enExample) * 1989-10-12 1991-06-12
JPH04326608A (ja) * 1991-04-26 1992-11-16 Sumitomo Electric Ind Ltd 発振回路
GB2280558B (en) * 1993-07-31 1998-04-15 Plessey Semiconductors Ltd Doppler microwave sensor
KR0153379B1 (ko) * 1995-09-26 1998-11-16 김광호 디지탈 무선통신시스템의 업/다운컨버터용 전압제어발진기
US6014064A (en) * 1996-07-28 2000-01-11 The Whitaker Corporation Heterolithic voltage controlled oscillator
JP2000165142A (ja) * 1998-11-25 2000-06-16 Alps Electric Co Ltd 発振回路
US6504443B1 (en) 2000-05-17 2003-01-07 Nec America, Inc., Common anode varactor tuned LC circuit
US6594478B1 (en) * 2000-11-03 2003-07-15 Motorola, Inc. Self oscillating mixer
US6521506B1 (en) * 2001-12-13 2003-02-18 International Business Machines Corporation Varactors for CMOS and BiCMOS technologies
AU2003228602A1 (en) 2002-04-22 2003-11-03 Cognio, Inc. Multiple-input multiple-output radio transceiver
US6959178B2 (en) * 2002-04-22 2005-10-25 Ipr Licensing Inc. Tunable upconverter mixer with image rejection
US7847669B2 (en) * 2006-12-06 2010-12-07 Georgia Tech Research Corporation Micro-electromechanical switched tunable inductor

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2695357A (en) * 1951-04-19 1954-11-23 Rca Corp Frequency conversion apparatus
US3244949A (en) * 1962-03-16 1966-04-05 Fairchild Camera Instr Co Voltage regulator
US3141135A (en) * 1962-05-11 1964-07-14 Westinghouse Electric Corp Semiconductive oscillator-mixer device
US3284723A (en) * 1962-07-02 1966-11-08 Westinghouse Electric Corp Oscillatory circuit and monolithic semiconductor device therefor
DE1261191B (de) * 1965-05-28 1968-02-15 Philips Patentverwaltung Mischschaltung
NL6511133A (enExample) * 1965-08-26 1967-02-27
US3421025A (en) * 1966-03-18 1969-01-07 Nat Semiconductor Corp High-speed avalanche switching circuit
US3391351A (en) * 1966-11-21 1968-07-02 Bell Telephone Labor Inc Circuits using a transistor operated into second breakdown region
FR1520890A (fr) * 1967-03-24 1968-04-12 Kruse Storke Electronics Oscillateur accordé par une tension
US3639858A (en) * 1968-08-31 1972-02-01 Mitsumi Electric Co Ltd Transistor impedance converter and oscillator circuits
US3836991A (en) * 1970-11-09 1974-09-17 Texas Instruments Inc Semiconductor device having epitaxial region of predetermined thickness
US3693105A (en) * 1971-01-18 1972-09-19 Nasa Active tuned circuit
US3886458A (en) * 1972-12-12 1975-05-27 Sony Corp Frequency converter circuit with integrated injection capacitor
DE2334570B1 (de) * 1973-07-07 1975-03-06 Philips Patentverwaltung Abstimmbare Hochfrequenz-Eingangsschaltungsanordnung fuer einen Fernsehempfaenger
JPS5718710B2 (enExample) * 1974-05-10 1982-04-17
US4010428A (en) * 1975-09-15 1977-03-01 Siemens Aktiengesellschaft Transistor oscillator utilizing clapp circuit configuration for operation in the microwave band

Also Published As

Publication number Publication date
JPS52106255A (en) 1977-09-06
FR2343361B1 (enExample) 1982-03-05
IT1076979B (it) 1985-04-27
US4150344A (en) 1979-04-17
US4249262A (en) 1981-02-03
FR2343361A1 (fr) 1977-09-30
JPS6047765B2 (ja) 1985-10-23

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]