FR2343361A1 - Oscillateur a micro-ondes accordable - Google Patents

Oscillateur a micro-ondes accordable

Info

Publication number
FR2343361A1
FR2343361A1 FR7705569A FR7705569A FR2343361A1 FR 2343361 A1 FR2343361 A1 FR 2343361A1 FR 7705569 A FR7705569 A FR 7705569A FR 7705569 A FR7705569 A FR 7705569A FR 2343361 A1 FR2343361 A1 FR 2343361A1
Authority
FR
France
Prior art keywords
microwave oscillator
tunable microwave
tunable
oscillator
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7705569A
Other languages
English (en)
French (fr)
Other versions
FR2343361B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2608451A external-priority patent/DE2608451C2/de
Priority claimed from DE2630992A external-priority patent/DE2630992C2/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2343361A1 publication Critical patent/FR2343361A1/fr
Application granted granted Critical
Publication of FR2343361B1 publication Critical patent/FR2343361B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
    • H03B5/1847—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/0014—Structural aspects of oscillators
    • H03B2200/002—Structural aspects of oscillators making use of ceramic material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/0014—Structural aspects of oscillators
    • H03B2200/0022—Structural aspects of oscillators characterised by the substrate, e.g. material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/003—Circuit elements of oscillators
    • H03B2200/0032—Circuit elements of oscillators including a device with a Schottky junction
FR7705569A 1976-03-01 1977-02-25 Oscillateur a micro-ondes accordable Granted FR2343361A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2608451A DE2608451C2 (de) 1976-03-01 1976-03-01 Abstimmbarer Mikrowellenoszillator
DE2630992A DE2630992C2 (de) 1976-07-09 1976-07-09 Abstimmbarer Mikrowellenoszillator mit Mischstufe

Publications (2)

Publication Number Publication Date
FR2343361A1 true FR2343361A1 (fr) 1977-09-30
FR2343361B1 FR2343361B1 (enExample) 1982-03-05

Family

ID=25770136

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7705569A Granted FR2343361A1 (fr) 1976-03-01 1977-02-25 Oscillateur a micro-ondes accordable

Country Status (5)

Country Link
US (2) US4150344A (enExample)
JP (1) JPS6047765B2 (enExample)
FR (1) FR2343361A1 (enExample)
GB (1) GB1572743A (enExample)
IT (1) IT1076979B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2561048A1 (fr) * 1984-03-09 1985-09-13 Thomson Csf Oscillateur hyperfrequences a transistor, commande par capacite variable
EP0110595A3 (en) * 1982-11-29 1986-10-15 Hazeltine Corporation Oscillator utilizing inductive parameter of transistor
EP0510710A1 (en) * 1991-04-26 1992-10-28 Sumitomo Electric Industries, Limited Oscillating circuit device and its manufacturing method.

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE33469E (en) * 1981-08-14 1990-12-04 Texas Instruments Incorporated Monolithic microwave wide-band VCO
US4481487A (en) * 1981-08-14 1984-11-06 Texas Instruments Incorporated Monolithic microwave wide-band VCO
US4458215A (en) * 1981-08-17 1984-07-03 Rca Corporation Monolithic voltage controlled oscillator
US4630006A (en) * 1985-05-31 1986-12-16 Anderson Keith V Current-tuned transistor oscillator
JPH0359962U (enExample) * 1989-10-12 1991-06-12
GB2280558B (en) * 1993-07-31 1998-04-15 Plessey Semiconductors Ltd Doppler microwave sensor
KR0153379B1 (ko) * 1995-09-26 1998-11-16 김광호 디지탈 무선통신시스템의 업/다운컨버터용 전압제어발진기
US6014064A (en) * 1996-07-28 2000-01-11 The Whitaker Corporation Heterolithic voltage controlled oscillator
JP2000165142A (ja) * 1998-11-25 2000-06-16 Alps Electric Co Ltd 発振回路
US6504443B1 (en) 2000-05-17 2003-01-07 Nec America, Inc., Common anode varactor tuned LC circuit
US6594478B1 (en) * 2000-11-03 2003-07-15 Motorola, Inc. Self oscillating mixer
US6521506B1 (en) * 2001-12-13 2003-02-18 International Business Machines Corporation Varactors for CMOS and BiCMOS technologies
AU2003228602A1 (en) 2002-04-22 2003-11-03 Cognio, Inc. Multiple-input multiple-output radio transceiver
US6959178B2 (en) * 2002-04-22 2005-10-25 Ipr Licensing Inc. Tunable upconverter mixer with image rejection
US7847669B2 (en) * 2006-12-06 2010-12-07 Georgia Tech Research Corporation Micro-electromechanical switched tunable inductor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3244949A (en) * 1962-03-16 1966-04-05 Fairchild Camera Instr Co Voltage regulator
FR1520890A (fr) * 1967-03-24 1968-04-12 Kruse Storke Electronics Oscillateur accordé par une tension
US3421025A (en) * 1966-03-18 1969-01-07 Nat Semiconductor Corp High-speed avalanche switching circuit
DE2361810A1 (de) * 1972-12-12 1974-06-27 Sony Corp Signalumwandlungsschaltung
US3836991A (en) * 1970-11-09 1974-09-17 Texas Instruments Inc Semiconductor device having epitaxial region of predetermined thickness
FR2236326A1 (enExample) * 1973-07-07 1975-01-31 Philips Nv

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2695357A (en) * 1951-04-19 1954-11-23 Rca Corp Frequency conversion apparatus
US3141135A (en) * 1962-05-11 1964-07-14 Westinghouse Electric Corp Semiconductive oscillator-mixer device
US3284723A (en) * 1962-07-02 1966-11-08 Westinghouse Electric Corp Oscillatory circuit and monolithic semiconductor device therefor
DE1261191B (de) * 1965-05-28 1968-02-15 Philips Patentverwaltung Mischschaltung
NL6511133A (enExample) * 1965-08-26 1967-02-27
US3391351A (en) * 1966-11-21 1968-07-02 Bell Telephone Labor Inc Circuits using a transistor operated into second breakdown region
US3639858A (en) * 1968-08-31 1972-02-01 Mitsumi Electric Co Ltd Transistor impedance converter and oscillator circuits
US3693105A (en) * 1971-01-18 1972-09-19 Nasa Active tuned circuit
JPS5718710B2 (enExample) * 1974-05-10 1982-04-17
US4010428A (en) * 1975-09-15 1977-03-01 Siemens Aktiengesellschaft Transistor oscillator utilizing clapp circuit configuration for operation in the microwave band

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3244949A (en) * 1962-03-16 1966-04-05 Fairchild Camera Instr Co Voltage regulator
US3421025A (en) * 1966-03-18 1969-01-07 Nat Semiconductor Corp High-speed avalanche switching circuit
FR1520890A (fr) * 1967-03-24 1968-04-12 Kruse Storke Electronics Oscillateur accordé par une tension
US3836991A (en) * 1970-11-09 1974-09-17 Texas Instruments Inc Semiconductor device having epitaxial region of predetermined thickness
DE2361810A1 (de) * 1972-12-12 1974-06-27 Sony Corp Signalumwandlungsschaltung
FR2236326A1 (enExample) * 1973-07-07 1975-01-31 Philips Nv

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
NV176/69 *
NV8107/72 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0110595A3 (en) * 1982-11-29 1986-10-15 Hazeltine Corporation Oscillator utilizing inductive parameter of transistor
FR2561048A1 (fr) * 1984-03-09 1985-09-13 Thomson Csf Oscillateur hyperfrequences a transistor, commande par capacite variable
EP0156708A1 (fr) * 1984-03-09 1985-10-02 Thomson-Csf Oscillateur hyperfréquences à transistor, commandé par capacité variable
EP0510710A1 (en) * 1991-04-26 1992-10-28 Sumitomo Electric Industries, Limited Oscillating circuit device and its manufacturing method.
US5248948A (en) * 1991-04-26 1993-09-28 Sumitomo Electric Industries, Ltd. Oscillating circuit device with a variable capacitor

Also Published As

Publication number Publication date
JPS52106255A (en) 1977-09-06
GB1572743A (en) 1980-08-06
FR2343361B1 (enExample) 1982-03-05
IT1076979B (it) 1985-04-27
US4150344A (en) 1979-04-17
US4249262A (en) 1981-02-03
JPS6047765B2 (ja) 1985-10-23

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