JPS6047740B2 - X-ray exposure mask and its manufacturing method - Google Patents

X-ray exposure mask and its manufacturing method

Info

Publication number
JPS6047740B2
JPS6047740B2 JP53022528A JP2252878A JPS6047740B2 JP S6047740 B2 JPS6047740 B2 JP S6047740B2 JP 53022528 A JP53022528 A JP 53022528A JP 2252878 A JP2252878 A JP 2252878A JP S6047740 B2 JPS6047740 B2 JP S6047740B2
Authority
JP
Japan
Prior art keywords
ray exposure
core material
film
exposure mask
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53022528A
Other languages
Japanese (ja)
Other versions
JPS54115073A (en
Inventor
正 中村
恵造 日出島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Original Assignee
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHO ERU ESU AI GIJUTSU KENKYU KUMIAI filed Critical CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority to JP53022528A priority Critical patent/JPS6047740B2/en
Publication of JPS54115073A publication Critical patent/JPS54115073A/en
Publication of JPS6047740B2 publication Critical patent/JPS6047740B2/en
Expired legal-status Critical Current

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  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

【発明の詳細な説明】 本発明は、X線露用光マスク及びその製造方法に関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photomask for X-ray exposure and a method for manufacturing the same.

X線露光処理は、従来行われている電子線露光処理にお
いて問題となる二次電子の発生や塵埃による散乱がなく
、高いアスペクト比のレジスト微細パターンが得られる
ことを特徴としている。
The X-ray exposure process is characterized by the fact that there is no generation of secondary electrons or scattering due to dust, which are problems in conventional electron beam exposure processes, and a fine resist pattern with a high aspect ratio can be obtained.

第1図はX線露光装置の原理図である。すなわち、基本
的にX線発生部1と試料室2とに分割され、両室はベリ
リウム窓3で区切られ、X線発生部1が常に真空に保た
れてターゲット4が汚れないようにされている。
FIG. 1 is a diagram showing the principle of an X-ray exposure apparatus. That is, it is basically divided into an X-ray generating section 1 and a sample chamber 2, and both chambers are separated by a beryllium window 3, so that the X-ray generating section 1 is always kept in a vacuum and the target 4 is not contaminated. There is.

同図X線発生室1内において、電子銃5から発生した電
子線6がターゲット4に衝突し、該ターゲット4からX
線7が発生する。
In the X-ray generation chamber 1 in the figure, an electron beam 6 generated from an electron gun 5 collides with a target 4, and the
Line 7 occurs.

そしてベリリウム窓3を通して試料室2へ入射したX線
7は、X線露光用マスク8を通過して、被処理基板9上
に被着されている。X線レジスト10に選択的に照射さ
れる。ここで該X線露光用マスク8は、第2図に詳細に
示されるようにフレーム21、タップラン(支持膜)2
2並びにX線吸収体23からなる。
The X-rays 7 entering the sample chamber 2 through the beryllium window 3 pass through an X-ray exposure mask 8 and are deposited on a substrate 9 to be processed. The X-ray resist 10 is selectively irradiated. Here, the X-ray exposure mask 8 includes a frame 21, a tap run (supporting film) 2, as shown in detail in FIG.
2 and an X-ray absorber 23.

従来タップラン22としてシリコン(Si)、窒化シリ
コン(Si、No)など剛体薄膜が用いられてきた。と
ころがこれらの剛体薄膜からなるタップランを用いて露
光処理を行うと、製造工程中の熱処理などにより被処理
基板に反りが生じた場合、マスクと被処理基板とが完全
密着せず、転写歪が発生し、正確な露光処理ができなか
つた。そこで、ポリイミド等のプラスチック●フィルム
をメンブランとして使用することが提案された。
Conventionally, a rigid thin film such as silicon (Si) or silicon nitride (Si, No) has been used as the tap run 22. However, when exposure processing is performed using a tap run made of these rigid thin films, if the substrate to be processed is warped due to heat treatment during the manufacturing process, the mask and the substrate to be processed do not come into perfect contact, causing transfer distortion. However, accurate exposure processing was not possible. Therefore, it was proposed to use a plastic film such as polyimide as a membrane.

このような構造によれば、マスクと被処理基板とを完全
密着させることができる他、該プラスチック・フィルム
が透明なので光学的位置合せができるという特長がある
。このようなメンブランをプラスチック・フィルムから
構成したX線露光用マスクのフレームは、一般にステン
レス又はパイレックスガラスが使われている。
This structure has the advantage that not only can the mask and the substrate to be processed be brought into perfect contact with each other, but also optical alignment can be performed because the plastic film is transparent. The frame of an X-ray exposure mask in which the membrane is made of a plastic film is generally made of stainless steel or Pyrex glass.

ところがステンレスは加工精度は良いが、熱膨張係数が
10×10−6/℃であり、被処理基板であるシリコン
基板(熱膨張係数2×10−5/℃)に露光処理を行お
うとする時、その差が大きく、電子線露光による該X線
露光用マスクの製作時と該X線露光用マスクを用いての
X線露光処理時とで温度差がある場合、あるいは長時間
のX線露光時に温度変化が生じた場合には該X線露光用
マスクと被処理基板との間に位置すれを生じてしまい、
微細加工上、不適当である。
However, although stainless steel has good processing accuracy, it has a thermal expansion coefficient of 10 x 10-6/°C, which makes it difficult to perform exposure processing on a silicon substrate (thermal expansion coefficient of 2 x 10-5/°C). , the temperature difference is large, and there is a temperature difference between the time of manufacturing the X-ray exposure mask by electron beam exposure and the time of X-ray exposure processing using the X-ray exposure mask, or if there is a long-term X-ray exposure. Sometimes, when temperature changes occur, misalignment occurs between the X-ray exposure mask and the substrate to be processed.
It is inappropriate for microfabrication.

例えば直径100C蒜〕のシリコン基板に対し露光処理
を行う際、その処理中の温度差が2〔℃〕ある場合、最
大位置ずれは1.6〔μ〕程にもなる。又、パイレック
スガラスは、その熱膨張係数が−3×10−3/℃とシ
リコンに近いが、それ自体の加工精度を上げにくいとい
う難点がある。
For example, when performing an exposure process on a silicon substrate with a diameter of 100C, if the temperature difference during the process is 2 degrees Celsius, the maximum positional deviation will be about 1.6 microns. Further, although Pyrex glass has a coefficient of thermal expansion of -3.times.10@-3 / DEG C., which is close to that of silicon, it has the disadvantage that it is difficult to improve its processing accuracy.

その他シリコン単体をフレームに使う場合もあるが比較
的脆いという欠点がある。
In other cases, silicon alone is used for the frame, but it has the disadvantage of being relatively brittle.

本発明は、このような従来のX線露光用マスク.の有す
る欠点を除去し、より高精度の露光処理を行うことがで
きるX線露光用マスクを提供しようとするものである。
The present invention is directed to such a conventional X-ray exposure mask. The present invention aims to provide an X-ray exposure mask that eliminates the drawbacks of the X-ray exposure mask and allows exposure processing to be performed with higher precision.

また本発明は、該X線露光用マスクを容易に形成するこ
とができる製造方法をも提供する。このため、本発明に
よれば、被処理基板とほぼ同一の熱膨張係数を有する材
料を、マスクフレームの芯材として使用してなることを
特徴とするX線露光用マスクが提供される。また本発明
によれば中央部が平たんで周囲に断く面が略U字状の溝
を有する型を準備し、該型の前記溝内へ芯材を配置した
後、該型の中央平たん部並びに周囲溝内に樹脂層を形成
し、しかる後該型を除去してX線吸収体支持膜と該X線
吸収体支持膜の端部に一体成型されたフレームとを形成
する工程を有することを特徴とするX線露光用マスクの
製造方法が提供される。
The present invention also provides a manufacturing method that can easily form the X-ray exposure mask. Therefore, according to the present invention, there is provided an X-ray exposure mask characterized in that a material having substantially the same coefficient of thermal expansion as the substrate to be processed is used as the core material of the mask frame. Further, according to the present invention, a mold having a flat central part and a substantially U-shaped groove on the periphery is prepared, and after the core material is placed in the groove of the mold, the central part of the mold is flat. A step of forming a resin layer in the ridge portion and the surrounding groove, and then removing the mold to form an X-ray absorber support membrane and a frame integrally molded at the end of the X-ray absorber support membrane. A method for manufacturing an X-ray exposure mask is provided.

すなわち、本発明は、X線露光用マスクのフレームの芯
材として、被処理基板とほぼ同一の熱膨張係数を有する
材質を使い、マスク製作時と転写時との温度差、あるい
は、長時間のX線露光時のマスク温度変化による位置ズ
レの問題を解決しようとするものである。
That is, the present invention uses a material having almost the same coefficient of thermal expansion as the substrate to be processed as the core material of the frame of the X-ray exposure mask, and eliminates the temperature difference between mask manufacturing and transfer, or the long-term This is an attempt to solve the problem of positional deviation due to mask temperature changes during X-ray exposure.

l 併せてメンブラン作製の際同時に型よりプラスチッ
ク●マスク●フレームを製作し、通常のフレーム接着工
程を省略できる点にも特徴を有する。
l Another feature is that the plastic ●mask●frame is produced from a mold at the same time as membrane production, and the usual frame bonding process can be omitted.

次に本発明を実施例をもつて詳細に説明しよう。本発明
の具体的な実施例を、第3図に示す製造工程をもつて、
より詳細に説明する。
Next, the present invention will be explained in detail using examples. A specific embodiment of the present invention has a manufacturing process shown in FIG.
This will be explained in more detail.

本実施例においては、メンブラン用プラスチック材とし
てポリイミドを、またはマスクフレームの芯材としてシ
リコン(Si)を用いた。まず、第3図aに示されるよ
うに、中央部31が平たんで周囲端部に断面U字状の溝
32を有する金属あるいはガラスからなる型33が準備
される。次いで同図bに示されるように、該型33の溝
32内にシリコンからなる芯材34を配置する。
In this example, polyimide was used as the plastic material for the membrane, and silicon (Si) was used as the core material of the mask frame. First, as shown in FIG. 3a, a mold 33 made of metal or glass is prepared which has a flat central portion 31 and a groove 32 having a U-shaped cross section at the peripheral edge. Next, as shown in FIG. 3B, a core material 34 made of silicon is placed in the groove 32 of the mold 33.

この時、該芯材34は、溝底部に設けられた複数個の突
起(図示せず)により該溝底部より浮かされた状態で収
容配置される。次いで該型33上に、モノマー溶液を回
転塗布し、前記溝32内の芯材34を被覆するとともに
、中央平たん部31にモノマー皮膜35を形成する。こ
の状態を同図cに示す。次いで、加熱処理を行つて前記
モノマー皮膜35をポリイミドに変換し、しかる後前記
型33を除去する。
At this time, the core material 34 is accommodated in a state floating above the groove bottom by a plurality of protrusions (not shown) provided at the groove bottom. Next, a monomer solution is spin-coated onto the mold 33 to cover the core material 34 in the groove 32 and to form a monomer film 35 on the central flat portion 31. This state is shown in figure c. Next, heat treatment is performed to convert the monomer film 35 into polyimide, and then the mold 33 is removed.

この状態を同図dに示す。次いで、ポリイミド皮膜36
の一方の表面に電子線レジスト層を形成し、該電子線レ
ジストに所望のパターンを露光し、現象処理を行つてレ
ジストパターン37を形成する。
This state is shown in Figure d. Next, polyimide film 36
An electron beam resist layer is formed on one surface of the electron beam resist, a desired pattern is exposed to light on the electron beam resist, and a resist pattern 37 is formed by performing a phenomenon treatment.

この状態を同図eに示す。しかる後、メッキ法、あるい
は蒸着法とリフトオフ法との組合せにより、前記ポリイ
ミド皮膜36のレジストパターン37に覆われていない
表面に、金(Au)等のX線吸収体の皮膜38を選択的
に形成する。
This state is shown in figure e. Thereafter, a film 38 of an X-ray absorber such as gold (Au) is selectively applied to the surface of the polyimide film 36 that is not covered with the resist pattern 37 by a plating method or a combination of a vapor deposition method and a lift-off method. Form.

この状態を同図fに示す。この結果、該第3図fに示さ
れる構造をもつて本発明に係るX線露光用マスクが完成
される。
This state is shown in figure f. As a result, the X-ray exposure mask according to the present invention having the structure shown in FIG. 3f is completed.

ここで、前記型33の除去には、該型33の内面へ予め
離型剤を塗布しておき離型するか、あるいは該型33自
体をエッチング除去することができる。すなわち、該型
33を、前述の如くガラスあるいはアルミニウム(A1
)、銅(Cu)等で構成すれば、弗酸等により、ポリイ
ミド皮膜をエッチングすることなく該型を除去すること
ができる。このような本発明によれば、フレームの芯材
が被処理基板とほぼ同一の熱膨張係数を有するX線露光
用マスクが提供される。従つて、電子線露光による該X
線露光用マスクの製作時と該X線露光用マスクを用いて
のX線露光処略時とで温度差がある場合、あるいはX線
露光処理中に温度変化が生じた場合であつても、該X線
露光マスクと被処理基板はほぼ同一量をもつて膨張、収
縮し、露光パターンのずれを生ずる恐れはない。
Here, the mold 33 can be removed by applying a mold release agent to the inner surface of the mold 33 in advance and releasing the mold, or by etching the mold 33 itself. That is, the mold 33 is made of glass or aluminum (A1) as described above.
), copper (Cu), etc., the mold can be removed with hydrofluoric acid or the like without etching the polyimide film. According to the present invention, there is provided an X-ray exposure mask in which the core material of the frame has substantially the same coefficient of thermal expansion as the substrate to be processed. Therefore, the X by electron beam exposure
Even if there is a temperature difference between the time of manufacturing the radiation exposure mask and the time of X-ray exposure processing using the X-ray exposure mask, or even if a temperature change occurs during the X-ray exposure processing, The X-ray exposure mask and the substrate to be processed expand and contract by approximately the same amount, and there is no risk of misalignment of the exposure pattern.

しかも、フレームの芯材は、メンブランの形成と同時固
着形成されるため、製造工程の簡略化が行え、しかもX
線露光用マスクとして機械的強度をより高めることがで
きる。
Moreover, since the core material of the frame is fixed and formed at the same time as the membrane is formed, the manufacturing process can be simplified, and
The mechanical strength can be further increased as a mask for line exposure.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はX線露光装置の概略の構造を示す断面図、第2
図は該X線露光装置において使用されるX線露光用マス
クの一般的な構造を示す断面図、第3図は本発明による
X線露光用マスクの製造工程を示す工程断面図である。
Figure 1 is a sectional view showing the general structure of the X-ray exposure device, Figure 2
The figure is a cross-sectional view showing the general structure of an X-ray exposure mask used in the X-ray exposure apparatus, and FIG. 3 is a process cross-sectional view showing the manufacturing process of the X-ray exposure mask according to the present invention.

Claims (1)

【特許請求の範囲】 1 X線を透過する皮膜上に選択的に形成されたX線吸
収体膜を有するX線露光マスクに於て、芯材がシリコン
からなり、該芯材の被覆層が前記皮膜と一体成型された
ポリイミドからなるプラスチックマスクフレームである
ことを特徴とするX線露光マスク。 2 中央部が平たんで周囲端部と該溝底部に設けられた
突起を有する型の該溝内にマスクフレームのSiよりな
る芯材を該突起により該溝底部より浮かせた状態で収容
配置する工程と、該型上にプラスチック皮膜形成溶液を
回転塗布し、該溝内を充填し該芯材を被覆するとともに
該中央平たん部に皮膜を形成した後加熱処理してポリイ
ミドよりなるプラスチック皮膜を形成する工程と、該芯
材がポリイミドで被覆されたプラスチックマスクフレー
ム及び前記プラスチック皮膜を型から除去する工程と、
該ポリイミドよりなるプラスチック皮膜表面にX線吸収
体膜を選択的に形成する工程とを有することを特徴とす
るX線露光用マスクの製造方法。
[Claims] 1. In an X-ray exposure mask having an X-ray absorber film selectively formed on a film that transmits X-rays, the core material is made of silicon, and the covering layer of the core material is made of silicon. An X-ray exposure mask characterized in that it is a plastic mask frame made of polyimide integrally molded with the film. 2. A core material made of Si of a mask frame is housed and arranged in a groove having a flat central part and a projection provided at the peripheral edge and the bottom of the groove, with the core material made of Si of the mask frame floating above the bottom of the groove by the projections. Step: Spinning a plastic film forming solution onto the mold, filling the groove and covering the core material, and forming a film on the central flat part, followed by heat treatment to form a plastic film made of polyimide. forming a plastic mask frame, the core material of which is coated with polyimide, and removing the plastic film from the mold;
A method for manufacturing an X-ray exposure mask, comprising the step of selectively forming an X-ray absorber film on the surface of the plastic film made of the polyimide.
JP53022528A 1978-02-28 1978-02-28 X-ray exposure mask and its manufacturing method Expired JPS6047740B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53022528A JPS6047740B2 (en) 1978-02-28 1978-02-28 X-ray exposure mask and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53022528A JPS6047740B2 (en) 1978-02-28 1978-02-28 X-ray exposure mask and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS54115073A JPS54115073A (en) 1979-09-07
JPS6047740B2 true JPS6047740B2 (en) 1985-10-23

Family

ID=12085284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53022528A Expired JPS6047740B2 (en) 1978-02-28 1978-02-28 X-ray exposure mask and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS6047740B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5885433A (en) * 1981-11-16 1983-05-21 Hitachi Ltd Photomask
JPH02308A (en) * 1987-09-30 1990-01-05 Canon Inc Retainer for x-ray mask

Also Published As

Publication number Publication date
JPS54115073A (en) 1979-09-07

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