JPH0322686B2 - - Google Patents
Info
- Publication number
- JPH0322686B2 JPH0322686B2 JP9028682A JP9028682A JPH0322686B2 JP H0322686 B2 JPH0322686 B2 JP H0322686B2 JP 9028682 A JP9028682 A JP 9028682A JP 9028682 A JP9028682 A JP 9028682A JP H0322686 B2 JPH0322686 B2 JP H0322686B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- frame
- patterned
- ray exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 229920003002 synthetic resin Polymers 0.000 claims description 6
- 239000000057 synthetic resin Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 10
- 239000010931 gold Substances 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 239000010453 quartz Substances 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Description
【発明の詳細な説明】
本発明はマスクの製造方法に係り、とりわけＸ
線露光用マスクの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a mask, particularly
The present invention relates to a method of manufacturing a mask for line exposure.
従来、Ｘ線露光用マスクの製造方法としては、
第１図に示すごとく、(a)シリコン・ウエーハ１の
表面から、(b)ボロン拡散を2μｍ程度行ない、ボ
ロン拡散層２を形成する。次で(c)金パターン層３
を通常のホトリソグラフイー法によりパターン状
レジストを形成後、シリコン・ウエーハを陰極に
したメツキ法で、レジスト溝部に形成する。 Conventionally, the manufacturing method for X-ray exposure masks is as follows:
As shown in FIG. 1, (a) boron is diffused from the surface of a silicon wafer 1 to (b) about 2 μm to form a boron diffusion layer 2. Next (c) gold pattern layer 3
After forming a patterned resist using a conventional photolithography method, it is formed in the resist groove using a plating method using a silicon wafer as a cathode.
次で、(d)シリコン・ウエーハの裏面の周辺にレ
ジスト膜を塗布してKOH水溶液でエツチングす
ると、ボロン拡散層でエツチングが止まり、2μ
ｍ厚のシリコンメンブラン膜４上に金パターン層
が形成され、シリコン枠５が形成されたＸ線露光
用マスクが製造される。裏面レジスト膜はシリコ
ン・ウエーハの裏面エツチング後除去される。 Next, (d) when a resist film is applied around the back side of the silicon wafer and etched with a KOH aqueous solution, the etching is stopped by the boron diffusion layer, and the etching is completed by 2 μm.
A gold pattern layer is formed on a m-thick silicon membrane film 4, and an X-ray exposure mask in which a silicon frame 5 is formed is manufactured. The backside resist film is removed after backside etching of the silicon wafer.
しかし、上記従来技術等によるＸ線露光用マス
クは、一般にメンブラン自体の熱膨張率が大き
く、例えばシリコン・メンブラン・マスクの場
合、100mmφのマスクで、１℃の温度変化で、パ
ターンがマスク端で0.5μｍずれることとなる欠点
がある。 However, in X-ray exposure masks based on the above-mentioned conventional technology, the membrane itself generally has a large coefficient of thermal expansion. For example, in the case of a silicone membrane mask, a 100 mm diameter mask will cause the pattern to change at the edge of the mask due to a temperature change of 1°C. There is a drawback that there is a deviation of 0.5 μm.
本発明はかかる従来技術の欠点をなくしパター
ンずれの小さなＸ線露光用マスクの製造方法を提
供することを目的とする。 SUMMARY OF THE INVENTION An object of the present invention is to eliminate the drawbacks of the prior art and provide a method for manufacturing an X-ray exposure mask with small pattern deviations.
上記目的を達成するための本発明の基本的な構
成は、マスクの製造法において、合成樹脂膜表面
には金あるいはMo等のＸ線阻止能を有する材料
を主体としたパターン状膜が形成され、該パター
ン状膜を有する合成樹脂膜表面に石英材からなる
枠状石英をのせ、前記パターン状膜を有する合成
樹脂表面と、該枠状石英の表面からスパツタ蒸着
法、化学蒸着法あるいはSi（OH）4等の液体塗布に
よるSiO2膜形成等を行ない、極めて薄いSiO2膜
を形成し、少なくとも前記パターン状膜と、前記
石英枠とを固着することにより、メンブラン状マ
スクとなす事を特徴とする。 The basic structure of the present invention to achieve the above object is that in a mask manufacturing method, a patterned film mainly made of a material having an X-ray blocking ability such as gold or Mo is formed on the surface of a synthetic resin film. , a frame-shaped quartz made of quartz material is placed on the surface of the synthetic resin film having the patterned film, and sputter deposition, chemical vapor deposition, or Si ( OH) 4 or the like to form an extremely thin SiO 2 film, and at least the patterned film and the quartz frame are fixed to form a membrane-like mask. do.
以下、実施例により本発明を詳細に説明する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
第２図は本発明によるＸ線露光用マスクの製造
方法の一実施例を示す工程毎の断面図である。 FIG. 2 is a cross-sectional view showing each step of an embodiment of the method for manufacturing an X-ray exposure mask according to the present invention.
まず(a)5μｍ厚のポリイミド膜１１上に、(b)200
〓白金層を金面スパツタ蒸着し、通常のホトリゾ
グラフイー技術によりパターン状レジストを形成
し、パターン溝に前記白金膜を陰極として0.5μｍ
厚の金メツキ層１３をパターン状に形成後、レジ
スト除去し、スパツタ・エツチングにより、白金
膜を金パターン層３をマスクとして行ない、金パ
ターン層１３の下に白金層１２を残存させる。次
に、(c)リング状の石英枠１４（厚さ１mm）を前記
パターン状金属層が形成されたポリイミド膜表面
にのせる。この場合、ポリイミド膜の裏表面に石
英枠１４をのせて、以後の工程の処理を行なつて
もよい。次で、(d)スパツタ蒸着法あるいは化学蒸
着（CUD）法あるいはSi（OH）液の塗布法等に
より、前記石英枠をのせた、金パターン膜付きの
ポリイミド膜等の表面から、SiO2膜１５を2μｍ
厚で形成する。Si（OH）4涎の塗布法では、石英枠
内に液体を塗布するため、少なくとも、石英枠と
ポリイミド膜の接する部分迄は該液体が塗布さ
れ、以後のベーキング（約300℃）等の処理によ
りSiO2膜が形成される。この段階で一応Ｘ線露
光用メングラン・マスクは形成される訳である
が、本例では、(e)工程として、ポリイミド膜をビ
ドラジン等により除去してSiO2メングラン・マ
スクとした。 First, (a) 5 μm thick polyimide film 11 is coated with (b) 200 μm thick polyimide film 11.
〓A platinum layer is sputter-deposited on the gold surface, a patterned resist is formed by ordinary photolithography technology, and the platinum film is used as a cathode in the pattern groove to form a 0.5 μm thick layer.
After forming a thick gold plating layer 13 in a pattern, the resist is removed and a platinum film is formed by sputter etching using the gold pattern layer 3 as a mask, leaving the platinum layer 12 under the gold pattern layer 13. Next, (c) a ring-shaped quartz frame 14 (thickness: 1 mm) is placed on the surface of the polyimide film on which the patterned metal layer is formed. In this case, the quartz frame 14 may be placed on the back surface of the polyimide film and the subsequent steps may be performed. Next, (d) a SiO 2 film is removed from the surface of the polyimide film with the gold pattern film on which the quartz frame is placed by sputter deposition, chemical vapor deposition (CUD), or Si(OH) liquid coating. 15 to 2μm
Form thick. In the Si(OH) 4 coating method, since the liquid is applied inside the quartz frame, the liquid is applied at least to the area where the quartz frame and the polyimide film are in contact, and the subsequent processing such as baking (approximately 300°C) A SiO 2 film is formed. At this stage, a menglan mask for X-ray exposure is formed, but in this example, in step (e), the polyimide film is removed with hydrazine or the like to form a SiO 2 menglan mask.
本発明によるＸ線露光用マスクでは、石英
（SiO2）の熱膨張率が従来のＸ線露光用マスク材
料より一桁小さく、殆んどパターンずれないマス
クとなすことができる効果があると共に、マスク
製造が容易であるという効果もする。 In the X-ray exposure mask according to the present invention, the coefficient of thermal expansion of quartz (SiO 2 ) is one order of magnitude smaller than that of conventional X-ray exposure mask materials, and there is an effect that the mask can be made with almost no pattern shift. It also has the effect of making masks easier to manufacture.
尚、本発明によるＸ線露光用マスクはＸ線露光
のみならず光露光にも用いることができ、Ｘ線露
光と光露光を混用する場合にはなお効果的に用い
ることができる。 Note that the mask for X-ray exposure according to the present invention can be used not only for X-ray exposure but also for light exposure, and can be used more effectively when X-ray exposure and light exposure are used together.
第１図ａ，ｂ，ｃ，ｄは従来のマスクの製造方
法、第２図ａ，ｂ，ｃ，ｄ，ｅは本発明によるマ
スクの製造方法を工程毎の断面図で示したもので
ある。
１……シリコン・ウエーハ、２……ボロン拡散
層、３……金パターン、４……メンブラン膜、５
……枠、１１……合成樹脂膜、１２……下地金属
層、１３……金パターン、１４……石英枠、１５
……SiO2膜。
Figures 1 a, b, c, and d are cross-sectional views of the conventional mask manufacturing method, and Figures 2 a, b, c, d, and e are cross-sectional views of each step of the mask manufacturing method according to the present invention. . 1...Silicon wafer, 2...Boron diffusion layer, 3...Gold pattern, 4...Membrane film, 5
... Frame, 11 ... Synthetic resin film, 12 ... Base metal layer, 13 ... Gold pattern, 14 ... Quartz frame, 15
... SiO2 film.
Claims (1)
主体としたパターン状膜を形成する工程、前記パ
ターン状膜を有する合成樹脂膜上に枠状部材を形
成する工程、前記パターン状膜、前記合成樹脂膜
及び前記枠状部材上に酸化シリコン膜を設けるこ
とにより、少なくとも前記パターン状膜及び前記
枠状部材と前記酸化シリコン膜とを固着する工程
を有することを特徴とするマスクの製造方法。1. A step of forming a patterned film mainly made of a material having an X-ray blocking ability on the surface of the synthetic resin film, a step of forming a frame-like member on the synthetic resin film having the patterned film, the patterned film, the A method for manufacturing a mask, comprising the step of fixing at least the patterned film and the frame-like member to the silicon oxide film by providing a silicon oxide film on the synthetic resin film and the frame-like member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57090286A JPS58207048A (en) | 1982-05-27 | 1982-05-27 | Production of mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57090286A JPS58207048A (en) | 1982-05-27 | 1982-05-27 | Production of mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58207048A JPS58207048A (en) | 1983-12-02 |
| JPH0322686B2 true JPH0322686B2 (en) | 1991-03-27 |
Family
ID=13994275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57090286A Granted JPS58207048A (en) | 1982-05-27 | 1982-05-27 | Production of mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58207048A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100674991B1 (en) | 2005-09-02 | 2007-01-29 | 삼성전자주식회사 | Binary photo mask having a layer with topology and method for manufacturing the same |
| KR100734318B1 (en) | 2006-06-12 | 2007-07-02 | 삼성전자주식회사 | Method of correction a critical dimension in a photo mask and a the photo mask corrected the critical dimension using the same |
-
1982
- 1982-05-27 JP JP57090286A patent/JPS58207048A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58207048A (en) | 1983-12-02 |
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