JPS6042832A - イオンビ−ム装置 - Google Patents

イオンビ−ム装置

Info

Publication number
JPS6042832A
JPS6042832A JP58151232A JP15123283A JPS6042832A JP S6042832 A JPS6042832 A JP S6042832A JP 58151232 A JP58151232 A JP 58151232A JP 15123283 A JP15123283 A JP 15123283A JP S6042832 A JPS6042832 A JP S6042832A
Authority
JP
Japan
Prior art keywords
ion beam
workpiece
shahei
vacuum
vacuum container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58151232A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0347573B2 (cs
Inventor
Yoichi Onishi
陽一 大西
Tanejiro Ikeda
池田　種次郎
Hiroshi Saeki
宏 佐伯
Tokuhito Hamane
浜根　徳人
Zenichi Yoshida
善一 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58151232A priority Critical patent/JPS6042832A/ja
Publication of JPS6042832A publication Critical patent/JPS6042832A/ja
Publication of JPH0347573B2 publication Critical patent/JPH0347573B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP58151232A 1983-08-18 1983-08-18 イオンビ−ム装置 Granted JPS6042832A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58151232A JPS6042832A (ja) 1983-08-18 1983-08-18 イオンビ−ム装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58151232A JPS6042832A (ja) 1983-08-18 1983-08-18 イオンビ−ム装置

Publications (2)

Publication Number Publication Date
JPS6042832A true JPS6042832A (ja) 1985-03-07
JPH0347573B2 JPH0347573B2 (cs) 1991-07-19

Family

ID=15514129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58151232A Granted JPS6042832A (ja) 1983-08-18 1983-08-18 イオンビ−ム装置

Country Status (1)

Country Link
JP (1) JPS6042832A (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62172076A (ja) * 1986-01-24 1987-07-29 ゼロツクス　コ−ポレ−シヨン インクジエツト組成物およびその製造方法
US6037391A (en) * 1997-06-24 2000-03-14 Mitsubishi Pencil Kabushiki Kaisha Water based dye ink composition for free ink rollerball pen
WO2002095085A1 (de) * 2001-05-22 2002-11-28 Infineon Technologies Ag Frequenzabgleich für bulk-acoustic-wave resonatoren durch lokales ionenstrahlätzen

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52130288A (en) * 1976-04-26 1977-11-01 Hitachi Ltd Patterning method
JPS5539690A (en) * 1978-09-14 1980-03-19 Chiyou Lsi Gijutsu Kenkyu Kumiai Plasma etching device
JPS5575220A (en) * 1978-12-01 1980-06-06 Nec Corp Ion-etching apparatus
JPS5946031A (ja) * 1982-09-09 1984-03-15 Fujitsu Ltd プラズマ処理装置
JPS5946748A (ja) * 1982-09-10 1984-03-16 Nippon Telegr & Teleph Corp <Ntt> イオンシヤワ装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52130288A (en) * 1976-04-26 1977-11-01 Hitachi Ltd Patterning method
JPS5539690A (en) * 1978-09-14 1980-03-19 Chiyou Lsi Gijutsu Kenkyu Kumiai Plasma etching device
JPS5575220A (en) * 1978-12-01 1980-06-06 Nec Corp Ion-etching apparatus
JPS5946031A (ja) * 1982-09-09 1984-03-15 Fujitsu Ltd プラズマ処理装置
JPS5946748A (ja) * 1982-09-10 1984-03-16 Nippon Telegr & Teleph Corp <Ntt> イオンシヤワ装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62172076A (ja) * 1986-01-24 1987-07-29 ゼロツクス　コ−ポレ−シヨン インクジエツト組成物およびその製造方法
US6037391A (en) * 1997-06-24 2000-03-14 Mitsubishi Pencil Kabushiki Kaisha Water based dye ink composition for free ink rollerball pen
WO2002095085A1 (de) * 2001-05-22 2002-11-28 Infineon Technologies Ag Frequenzabgleich für bulk-acoustic-wave resonatoren durch lokales ionenstrahlätzen
EP1816233A3 (de) * 2001-05-22 2007-08-22 Infineon Technologies AG Verfahren zur Herstellung einer Schicht mit einem vorgegebenen Schichtdickenprofil

Also Published As

Publication number Publication date
JPH0347573B2 (cs) 1991-07-19

Similar Documents

Publication Publication Date Title
JP2662321B2 (ja) 超低速クラスターイオンビームによる表面処理方法
JP2932650B2 (ja) 微細構造物の製造方法
US3860783A (en) Ion etching through a pattern mask
US4886681A (en) Metal-polymer adhesion by low energy bombardment
EP0206145B1 (en) A method of metallising an organic substrate so as to achieve improved adhesion of the metal
US4097636A (en) Metallized device
JP2757546B2 (ja) Ｆｅを含む物質のエッチング方法およびエッチング装置
EP0637901B1 (en) Processing method using fast atom beam
JPS6042832A (ja) イオンビ−ム装置
JPS59170270A (ja) 膜形成装置
JP3176089B2 (ja) セラミック回路基板の製造方法
CA1071578A (en) Cathode sputtering method for the manufacture of etched structures
JPS6265331A (ja) 銅もしくは銅合金のエツチング方法
JPH04242933A (ja) 酸化膜形成方法
JPS59208726A (ja) イオンビ−ム装置
JPH01309963A (ja) スパッタリング装置
JPH10242072A (ja) レーザ導入用窓の汚染防止方法および汚染防止装置
JPS6080111A (ja) 薄膜磁気ヘツドの製造方法及び装置
JPS5870533A (ja) リアクテイブ・イオン・エツチング法
JPH02262335A (ja) 有機化合物膜の除去方法
JP3078164B2 (ja) 微細加工方法
JPS6053025A (ja) ドライエツチング方法
JPH0410415A (ja) ドライエッチング方法
JPH01287288A (ja) 金属表面の清浄処理方法と清浄処理金属
JPH06207277A (ja) 微小パターン成形体の製造方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees