JPS6042813A - エピタキシヤル結晶成長法およびその装置 - Google Patents

エピタキシヤル結晶成長法およびその装置

Info

Publication number
JPS6042813A
JPS6042813A JP58150183A JP15018383A JPS6042813A JP S6042813 A JPS6042813 A JP S6042813A JP 58150183 A JP58150183 A JP 58150183A JP 15018383 A JP15018383 A JP 15018383A JP S6042813 A JPS6042813 A JP S6042813A
Authority
JP
Japan
Prior art keywords
hydrogen
hydrogen gas
crucible
crystal growth
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58150183A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0129052B2 (online.php
Inventor
Yoshiharu Horikoshi
佳治 堀越
Hiroshi Okamoto
岡本　紘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58150183A priority Critical patent/JPS6042813A/ja
Publication of JPS6042813A publication Critical patent/JPS6042813A/ja
Publication of JPH0129052B2 publication Critical patent/JPH0129052B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP58150183A 1983-08-19 1983-08-19 エピタキシヤル結晶成長法およびその装置 Granted JPS6042813A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58150183A JPS6042813A (ja) 1983-08-19 1983-08-19 エピタキシヤル結晶成長法およびその装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58150183A JPS6042813A (ja) 1983-08-19 1983-08-19 エピタキシヤル結晶成長法およびその装置

Publications (2)

Publication Number Publication Date
JPS6042813A true JPS6042813A (ja) 1985-03-07
JPH0129052B2 JPH0129052B2 (online.php) 1989-06-07

Family

ID=15491318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58150183A Granted JPS6042813A (ja) 1983-08-19 1983-08-19 エピタキシヤル結晶成長法およびその装置

Country Status (1)

Country Link
JP (1) JPS6042813A (online.php)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62500998A (ja) * 1984-11-30 1987-04-23 アメリカン テレフオン アンド テレグラフ カムパニ− 化学ビ−ム堆積法
US5122393A (en) * 1987-04-08 1992-06-16 British Telecommunications Public Limited Company Reagent source for molecular beam epitaxy
JPH08285048A (ja) * 1995-04-18 1996-11-01 Kawasaki Heavy Ind Ltd はすば／やまば歯車における３次元歯面修整構造

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62500998A (ja) * 1984-11-30 1987-04-23 アメリカン テレフオン アンド テレグラフ カムパニ− 化学ビ−ム堆積法
US5122393A (en) * 1987-04-08 1992-06-16 British Telecommunications Public Limited Company Reagent source for molecular beam epitaxy
JPH08285048A (ja) * 1995-04-18 1996-11-01 Kawasaki Heavy Ind Ltd はすば／やまば歯車における３次元歯面修整構造

Also Published As

Publication number Publication date
JPH0129052B2 (online.php) 1989-06-07

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