JPH0129052B2 - - Google Patents
Info
- Publication number
- JPH0129052B2 JPH0129052B2 JP58150183A JP15018383A JPH0129052B2 JP H0129052 B2 JPH0129052 B2 JP H0129052B2 JP 58150183 A JP58150183 A JP 58150183A JP 15018383 A JP15018383 A JP 15018383A JP H0129052 B2 JPH0129052 B2 JP H0129052B2
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- hydrogen gas
- high vacuum
- molecules
- crystal growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58150183A JPS6042813A (ja) | 1983-08-19 | 1983-08-19 | エピタキシヤル結晶成長法およびその装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58150183A JPS6042813A (ja) | 1983-08-19 | 1983-08-19 | エピタキシヤル結晶成長法およびその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6042813A JPS6042813A (ja) | 1985-03-07 |
| JPH0129052B2 true JPH0129052B2 (online.php) | 1989-06-07 |
Family
ID=15491318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58150183A Granted JPS6042813A (ja) | 1983-08-19 | 1983-08-19 | エピタキシヤル結晶成長法およびその装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6042813A (online.php) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4636268A (en) * | 1984-11-30 | 1987-01-13 | At&T Bell Laboratories | Chemical beam deposition method utilizing alkyl compounds in a carrier gas |
| GB8708436D0 (en) * | 1987-04-08 | 1987-05-13 | British Telecomm | Reagent source |
| JP2768912B2 (ja) * | 1995-04-18 | 1998-06-25 | 川崎重工業株式会社 | はすば／やまば歯車における３次元歯面修整構造 |
-
1983
- 1983-08-19 JP JP58150183A patent/JPS6042813A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6042813A (ja) | 1985-03-07 |
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