JPS6041227A - ホトレジストパタ−ンの変形防止方法 - Google Patents

ホトレジストパタ−ンの変形防止方法

Info

Publication number
JPS6041227A
JPS6041227A JP58149034A JP14903483A JPS6041227A JP S6041227 A JPS6041227 A JP S6041227A JP 58149034 A JP58149034 A JP 58149034A JP 14903483 A JP14903483 A JP 14903483A JP S6041227 A JPS6041227 A JP S6041227A
Authority
JP
Japan
Prior art keywords
pattern
photo resist
heating
height
development
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58149034A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0466021B2 (enrdf_load_stackoverflow
Inventor
Hiroaki Okudaira
奥平 弘明
Toshio Kobayashi
敏男 小林
Takeo Fukagawa
深川 武雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58149034A priority Critical patent/JPS6041227A/ja
Publication of JPS6041227A publication Critical patent/JPS6041227A/ja
Publication of JPH0466021B2 publication Critical patent/JPH0466021B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP58149034A 1983-08-15 1983-08-15 ホトレジストパタ−ンの変形防止方法 Granted JPS6041227A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58149034A JPS6041227A (ja) 1983-08-15 1983-08-15 ホトレジストパタ−ンの変形防止方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58149034A JPS6041227A (ja) 1983-08-15 1983-08-15 ホトレジストパタ−ンの変形防止方法

Publications (2)

Publication Number Publication Date
JPS6041227A true JPS6041227A (ja) 1985-03-04
JPH0466021B2 JPH0466021B2 (enrdf_load_stackoverflow) 1992-10-21

Family

ID=15466213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58149034A Granted JPS6041227A (ja) 1983-08-15 1983-08-15 ホトレジストパタ−ンの変形防止方法

Country Status (1)

Country Link
JP (1) JPS6041227A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63133627A (ja) * 1986-11-26 1988-06-06 Toshiba Corp 光照射装置
JPH0643637A (ja) * 1992-07-23 1994-02-18 Sumitomo Chem Co Ltd パターンの保持方法
JPH06186755A (ja) * 1993-07-01 1994-07-08 Fujitsu Ltd レジストパターンの形成方法
WO2003023775A1 (fr) * 2001-09-05 2003-03-20 Sony Corporation Procede de fabrication d'un disque original destine a la fabrication d'un support d'enregistrement et procede de fabrication d'une matrice

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5314568A (en) * 1976-07-26 1978-02-09 Hitachi Ltd Photolithography treatment system device
JPS54163680A (en) * 1978-06-15 1979-12-26 Fujitsu Ltd Pattern forming method
JPS553690A (en) * 1979-04-04 1980-01-11 Toshiba Corp Semiconductor luminous indicator

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5314568A (en) * 1976-07-26 1978-02-09 Hitachi Ltd Photolithography treatment system device
JPS54163680A (en) * 1978-06-15 1979-12-26 Fujitsu Ltd Pattern forming method
JPS553690A (en) * 1979-04-04 1980-01-11 Toshiba Corp Semiconductor luminous indicator

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63133627A (ja) * 1986-11-26 1988-06-06 Toshiba Corp 光照射装置
JPH0643637A (ja) * 1992-07-23 1994-02-18 Sumitomo Chem Co Ltd パターンの保持方法
JPH06186755A (ja) * 1993-07-01 1994-07-08 Fujitsu Ltd レジストパターンの形成方法
WO2003023775A1 (fr) * 2001-09-05 2003-03-20 Sony Corporation Procede de fabrication d'un disque original destine a la fabrication d'un support d'enregistrement et procede de fabrication d'une matrice

Also Published As

Publication number Publication date
JPH0466021B2 (enrdf_load_stackoverflow) 1992-10-21

Similar Documents

Publication Publication Date Title
KR970004447B1 (ko) 반사방지막 제조 방법 및 이를 이용한 반도체 장치의 제조 방법
WO1991001516A2 (en) Pattern forming and transferring processes
US5554489A (en) Method of forming a fine resist pattern using an alkaline film covered photoresist
JPH07106224A (ja) パターン形成方法
JPS6041227A (ja) ホトレジストパタ−ンの変形防止方法
JP2002236370A (ja) 反射防止膜組成物、及び半導体装置の製造方法
JPS63200531A (ja) 半導体装置の製造方法
JPH04301846A (ja) 露光用マスク基板の製造方法
EP0449272B1 (en) Pattern forming process
JPH07199482A (ja) レジストパターン形成方法
JPH07113905A (ja) 回折格子作製方法
JP3091886B2 (ja) レジストパターンの形成方法
JP2506637B2 (ja) パタ−ン形成方法
JPS6373522A (ja) 半導体装置の製造方法
JPH01241543A (ja) ネガ型感光性組成物及びパタン形成方法
JPS59202462A (ja) ネガ型レジストのパタ−ン形成方法
KR100464654B1 (ko) 반도체소자의 콘택홀 형성방법
JPS6047419A (ja) 多層レベルパタ−ンニング法
JPH06140300A (ja) 露光方法
JPH11242103A (ja) マイクロレンズの製造方法
JPH0458170B2 (enrdf_load_stackoverflow)
JP2000182940A (ja) レジストパターン形成方法
JPH07297113A (ja) レジストパターン形成方法
JP2583987B2 (ja) 半導体装置の製造方法
JPH02101468A (ja) 微細パターン形成方法