JPS6038855A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JPS6038855A
JPS6038855A JP58146394A JP14639483A JPS6038855A JP S6038855 A JPS6038855 A JP S6038855A JP 58146394 A JP58146394 A JP 58146394A JP 14639483 A JP14639483 A JP 14639483A JP S6038855 A JPS6038855 A JP S6038855A
Authority
JP
Japan
Prior art keywords
capacitor
capacitors
substrate
recessed
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58146394A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0426217B2 (cg-RX-API-DMAC10.html
Inventor
Tokuo Kure
久礼　得男
Hideo Sunami
英夫 角南
Yoshifumi Kawamoto
川本　佳史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58146394A priority Critical patent/JPS6038855A/ja
Publication of JPS6038855A publication Critical patent/JPS6038855A/ja
Publication of JPH0426217B2 publication Critical patent/JPH0426217B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP58146394A 1983-08-12 1983-08-12 半導体装置およびその製造方法 Granted JPS6038855A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58146394A JPS6038855A (ja) 1983-08-12 1983-08-12 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58146394A JPS6038855A (ja) 1983-08-12 1983-08-12 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS6038855A true JPS6038855A (ja) 1985-02-28
JPH0426217B2 JPH0426217B2 (cg-RX-API-DMAC10.html) 1992-05-06

Family

ID=15406704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58146394A Granted JPS6038855A (ja) 1983-08-12 1983-08-12 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS6038855A (cg-RX-API-DMAC10.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61184861A (ja) * 1985-02-12 1986-08-18 Matsushita Electronics Corp 半導体装置
JPS61208256A (ja) * 1985-03-13 1986-09-16 Toshiba Corp 半導体記憶装置
JPS61229349A (ja) * 1985-04-03 1986-10-13 Matsushita Electronics Corp Ｍｏｓキヤパシタの製造方法
JPH01217964A (ja) * 1988-02-26 1989-08-31 Toshiba Corp 半導体装置の製造方法
JPH01287956A (ja) * 1987-07-10 1989-11-20 Toshiba Corp 半導体記憶装置およびその製造方法
US5422294A (en) * 1993-05-03 1995-06-06 Noble, Jr.; Wendell P. Method of making a trench capacitor field shield with sidewall contact

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61184861A (ja) * 1985-02-12 1986-08-18 Matsushita Electronics Corp 半導体装置
JPS61208256A (ja) * 1985-03-13 1986-09-16 Toshiba Corp 半導体記憶装置
JPS61229349A (ja) * 1985-04-03 1986-10-13 Matsushita Electronics Corp Ｍｏｓキヤパシタの製造方法
US4797719A (en) * 1985-04-03 1989-01-10 Matsushita Electronics Corporation MOS capacitor with direct polycrystalline contact to grooved substrate
JPH01287956A (ja) * 1987-07-10 1989-11-20 Toshiba Corp 半導体記憶装置およびその製造方法
US5106774A (en) * 1987-07-10 1992-04-21 Kabushiki Kaisha Toshiba Method of making trench type dynamic random access memory device
JPH01217964A (ja) * 1988-02-26 1989-08-31 Toshiba Corp 半導体装置の製造方法
US5422294A (en) * 1993-05-03 1995-06-06 Noble, Jr.; Wendell P. Method of making a trench capacitor field shield with sidewall contact

Also Published As

Publication number Publication date
JPH0426217B2 (cg-RX-API-DMAC10.html) 1992-05-06

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