JPS6035821B2 - Manufacturing method of semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides that when electron beam irradiation technology is used in the photolithography process in the manufacture of semiconductor devices, the electron beam resist used for engraving can be used as is as an insulator. The present invention relates to a method of shortening the process and utilizing microfabrication technology.

Photoresists used in the manufacture of semiconductor devices are
It has excellent chemical resistance (inorganic acids), but it has poor heat resistance,
It has poor moisture resistance and can only be used in photo-etching processes, and cannot be used as a constituent material for semiconductor devices.

For this reason, silicon oxide or the like is used as an insulator, and with the miniaturization of electrode windows and miniaturization of interconnect spacing, resists that require advanced etching techniques must also withstand even more difficult usage conditions. The present invention aims to improve this drawback, shorten the process, and enable microfabrication.

This object is achieved according to the invention by leaving the electron beam resist as an insulator after it is used in a photolithographic process. Furthermore, when exposing with an electron beam, unlike light, depending on the accelerating voltage, it is possible to transmit the electron beam through a wiring metal film such as aluminum and expose the electron beam resist laid thereunder.

An example thereof will be explained with reference to the drawings. In Figure 1, 1 is the semiconductor substrate, 2 is the place where electrodes such as emitters need to be formed, and Figure 2 shows a simplified cross-sectional view of the electrode after the first layer of electrode wiring has already been completed. .

That is, 3 is the wiring cross section. The same method can be applied to the cases shown in FIGS. 1 and 2, or even to the third layer of wiring, so the subsequent steps will be explained using FIG. 1. The electron beam resist 4 is placed on the structure shown in FIG.
Then, the resist is etched only in the areas necessary for electrode formation. Thereafter, an electrode layer such as aluminum is formed by vapor deposition or the like, and a wiring pattern is formed by photolithography (FIG. 3).

Thereafter, an electron beam is irradiated from above the electrode so that the electron beam resist remains only in the areas necessary to maintain the shape of the electrode wiring, and unnecessary portions 6 are removed as shown in FIG. This greatly reduces the wiring capacitance determined by the dielectric constant of the electron beam resist, contributing to faster device operation.

As described above, according to the method of manufacturing a semiconductor device of the present invention, it is possible to achieve fine processing, shortening of process steps, and high-speed device operation due to reduction in wiring capacitance.

[Brief explanation of drawings]

1 to 4 are diagrams showing the method of the present invention, in which FIG. 1 is a cross-sectional view of a semiconductor substrate on which a predetermined bond has been formed, and FIG. 2 is a cross-sectional view when the first layer of wiring is applied to this substrate. Fig. 3 is a cross-sectional view after applying an electron beam resist for interlayer insulation, raising the electrode window, and forming a wiring pattern, and Fig. 4 is a cross-sectional view when electron beam resist is applied for interlayer insulation, and unnecessary electron beam resist is removed by electron beam exposure. FIG. In the figure, 1 is a semiconductor substrate, 2 is a region where an electrode is to be provided, and 3 is a semiconductor substrate.
is the first layer wiring, 4 is the electron beam resist, 5 is the upper wiring, 6
This is the part where the sting is removed. Figure 1, Figure 2, Figure 3, Figure 3.

Claims (1)

[Claims] 1. After forming an electron beam-sensitive material layer on a semiconductor substrate, a conductor layer is deposited on the electron beam-sensitive material layer and a patterned wiring layer is formed, and then an electron beam is irradiated from above the wiring layer. A method for manufacturing a semiconductor device, comprising a step of partially leaving the electron beam sensitive material layer under the wiring layer.