JPS6033556A - ドライエッチング用フォトマスク素材 - Google Patents
ドライエッチング用フォトマスク素材Info
- Publication number
- JPS6033556A JPS6033556A JP58143529A JP14352983A JPS6033556A JP S6033556 A JPS6033556 A JP S6033556A JP 58143529 A JP58143529 A JP 58143529A JP 14352983 A JP14352983 A JP 14352983A JP S6033556 A JPS6033556 A JP S6033556A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- thin film
- dry etching
- etching
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 17
- 238000001312 dry etching Methods 0.000 title claims description 21
- 239000010409 thin film Substances 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 13
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims abstract description 11
- 239000003513 alkali Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 14
- 229910052721 tungsten Inorganic materials 0.000 claims description 14
- 239000010937 tungsten Substances 0.000 claims description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 13
- 238000005530 etching Methods 0.000 abstract description 9
- 239000002585 base Substances 0.000 abstract description 3
- 229910052804 chromium Inorganic materials 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000005388 borosilicate glass Substances 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 19
- 239000001301 oxygen Substances 0.000 description 19
- 229910052760 oxygen Inorganic materials 0.000 description 19
- 239000007789 gas Substances 0.000 description 14
- 239000010410 layer Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 230000007547 defect Effects 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 150000004820 halides Chemical class 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000009918 complex formation Effects 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000000968 intestinal effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- -1 oxygen Chemical compound 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Surface Treatment Of Glass (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58143529A JPS6033556A (ja) | 1983-08-05 | 1983-08-05 | ドライエッチング用フォトマスク素材 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58143529A JPS6033556A (ja) | 1983-08-05 | 1983-08-05 | ドライエッチング用フォトマスク素材 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6033556A true JPS6033556A (ja) | 1985-02-20 |
| JPH0430576B2 JPH0430576B2 (enrdf_load_stackoverflow) | 1992-05-22 |
Family
ID=15340857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58143529A Granted JPS6033556A (ja) | 1983-08-05 | 1983-08-05 | ドライエッチング用フォトマスク素材 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6033556A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0194347A (ja) * | 1987-09-03 | 1989-04-13 | Philips Gloeilampenfab:Nv | 放射リソグラフィ用マスクの製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5075613A (enrdf_load_stackoverflow) * | 1973-11-09 | 1975-06-20 | ||
| JPS5129875A (enrdf_load_stackoverflow) * | 1974-09-06 | 1976-03-13 | Tokyo Shibaura Electric Co | |
| JPS5410729A (en) * | 1977-06-27 | 1979-01-26 | Toppan Printing Co Ltd | Photomask |
| JPS57147633A (en) * | 1981-03-09 | 1982-09-11 | Hoya Corp | Plate for photomask |
| JPS5832038A (ja) * | 1981-08-14 | 1983-02-24 | Hoya Corp | フオトエツチングマスク用無アルカリガラス |
-
1983
- 1983-08-05 JP JP58143529A patent/JPS6033556A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5075613A (enrdf_load_stackoverflow) * | 1973-11-09 | 1975-06-20 | ||
| JPS5129875A (enrdf_load_stackoverflow) * | 1974-09-06 | 1976-03-13 | Tokyo Shibaura Electric Co | |
| JPS5410729A (en) * | 1977-06-27 | 1979-01-26 | Toppan Printing Co Ltd | Photomask |
| JPS57147633A (en) * | 1981-03-09 | 1982-09-11 | Hoya Corp | Plate for photomask |
| JPS5832038A (ja) * | 1981-08-14 | 1983-02-24 | Hoya Corp | フオトエツチングマスク用無アルカリガラス |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0194347A (ja) * | 1987-09-03 | 1989-04-13 | Philips Gloeilampenfab:Nv | 放射リソグラフィ用マスクの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0430576B2 (enrdf_load_stackoverflow) | 1992-05-22 |
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