JPS6033303B2 - ワイヤのボンデイング方法 - Google Patents

ワイヤのボンデイング方法

Info

Publication number
JPS6033303B2
JPS6033303B2 JP53049807A JP4980778A JPS6033303B2 JP S6033303 B2 JPS6033303 B2 JP S6033303B2 JP 53049807 A JP53049807 A JP 53049807A JP 4980778 A JP4980778 A JP 4980778A JP S6033303 B2 JPS6033303 B2 JP S6033303B2
Authority
JP
Japan
Prior art keywords
wire
solder
electrodes
pellet
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53049807A
Other languages
English (en)
Other versions
JPS54142972A (en
Inventor
健二 明山
信克 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP53049807A priority Critical patent/JPS6033303B2/ja
Publication of JPS54142972A publication Critical patent/JPS54142972A/ja
Publication of JPS6033303B2 publication Critical patent/JPS6033303B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 本発明は半導体べレット等の電極部にボンディングワイ
ヤを半田づけする方法に関するものである。
先端が微４・間隔をおいて露出された二つの電極棒（パ
ラレルギャップ電極と通称される）の先端に上記両軍極
を短絡するようにボンディングワイヤを接触させ、上記
電極榛とワイヤを半導体装置べレットの電極部等所定の
半田面上に押付け、上記パラレルギャップ電極の両電極
間に通電し、このときの抵抗発熱を利用して上記ワイヤ
を半田づけする方法が知られている。
しかし、上述の方法では、半田の厚みが少ない場合など
には、ワイヤ表面への半田の吸上がり量が十分でなく、
接合不良が発生しやすく、また、半田の吸上がり量を増
してやるためにパラレルギャップ電極の押圧を高めたり
、通電量を増してやると、ベレットに機械的あるいは熱
的損傷を与えるなどの欠点があった。
本発明は上述の如き従来技術の欠点を解消することを目
的としてなされたもので、本発明の方法は、上記パラレ
ルギャップ電極を用いてワイヤをべレット等の半田面上
に固定し、次いで上記のべレット等を炉内で加熱し、半
田を溶融せしめ、半田を十分にワイヤ上に吸上げるよう
にしたことを特徴とするものである。
即ち、図示する如き微小間隔をおいて先端を露出せしめ
た二つの電極１および２を有するパラレルギャップ電極
の上記先端部にＡｇなどからなるボンディングワイヤ３
を、上記両電極１，２間を短絡するように接触せしめ、
それらをべレット４上の電極部に盛られた半田５の上面
に押付けた状態で電源６のスイッチ７を閉じると、ボン
ディングワイヤ８‘こ電流が流れ、抵抗発熱によって半
田５が部分的に溶融し、通電を止めるとワイヤ３は半田
５上に固定される。
本発明では、この段階においてワイヤ３は極く軽く半田
５上に固定されていればよく、上述の通電時間あるいは
電極を半田面上に押付ける時の押圧力は極くわずかでよ
い。次いで上述の如くして半田５上にワイヤ３を固定し
てなるべレット４を適宜の炉内で半田５が溶融する程度
の温度に加熱してやると、半田５はワイヤ３の表面上に
破線で図示した部分８の如く吸上げられ冷却後、ワイヤ
３は半田５に強固に接合される。上述の如き本発明によ
れば、ワイヤの接合部に過大な機械的あるいは熱的応力
を加えることなくワイヤ面上に充分な半田を吸上げるこ
とができ、べレット上の半田量にバラツキがある場合に
おいても均一な品質のもとにワイヤボンディングを行な
うことができる。
【図面の簡単な説明】
図は本発明の一実施態様を示すワイヤボンディング部の
縦断面図である。 １，２・・・・・・パラレルギャップ電極、３・・・・
・・ボンディングワイヤ、４……べレツト、５……半田
、６・・・・・・電極、７・・・・・・スイッチ。

Claims (1)

    【特許請求の範囲】
  1. １ 先端が微小間隔をおいて露出される二つの電極に上
    記両電極間を短絡するようにワイヤを接触せしめ、上記
    両電極とワイヤとをペレツトの電極面上に盛られた半田
    面に押付け、上記両電極間に通電し、ワイヤの低抗発熱
    によつて半田を溶かして上記ワイヤを半田面上に固定し
    、次いで上記ペレツトを炉内で熱して上記半田ワイヤ上
    に十分吸上がらせることを特徴とするワイヤのボンデイ
    ング方法。
JP53049807A 1978-04-28 1978-04-28 ワイヤのボンデイング方法 Expired JPS6033303B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53049807A JPS6033303B2 (ja) 1978-04-28 1978-04-28 ワイヤのボンデイング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53049807A JPS6033303B2 (ja) 1978-04-28 1978-04-28 ワイヤのボンデイング方法

Publications (2)

Publication Number Publication Date
JPS54142972A JPS54142972A (en) 1979-11-07
JPS6033303B2 true JPS6033303B2 (ja) 1985-08-02

Family

ID=12841395

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53049807A Expired JPS6033303B2 (ja) 1978-04-28 1978-04-28 ワイヤのボンデイング方法

Country Status (1)

Country Link
JP (1) JPS6033303B2 (ja)

Also Published As

Publication number Publication date
JPS54142972A (en) 1979-11-07

Similar Documents

Publication Publication Date Title
KR100623811B1 (ko) 열인두
JPH0855672A (ja) 半導体電気ヒータおよびその製造方法
JPS6033303B2 (ja) ワイヤのボンデイング方法
US4141028A (en) Contact clip
SE8302679L (sv) Lodningsforfarande
US3941971A (en) Resistance brazing of solid copper parts to stranded copper parts with phos-silver
JPS59134580A (ja) 電気的導線を接触させる方法
US1310411A (en) Celitjs
US1490438A (en) Method of making thermocouple elements
JP2000100291A (ja) 温度ヒュ−ズエレメントの取付け構造及び取付け方法
JPS6233023B2 (ja)
JPS6012748A (ja) 厚膜導体接続方法
JPS6418245A (en) Ceramic substrate having metal pin and its manufacture
JPH0215974B2 (ja)
JPS6347142B2 (ja)
JPS59137174A (ja) 予備半田付け方法
GB1098534A (en) Improvements in or relating to the manufacture of electrical components
JPS63197345A (ja) 半導体素子のダイスボンデイング方法
JPS6399746A (ja) モ−タ回転子の製造方法およびその方法に使用する加熱装置
JP2594001Y2 (ja) コイル端末の被膜剥離装置
JPH0119418Y2 (ja)
JPS56101789A (en) Bonding method of lead wire
JPS5518029A (en) Method of fabricating resin sealed type semiconductor device
JP2001244040A (ja) ガラスエポキシ基板や電気回路等に装備されたランド若しくはパッドとマグネットワイヤ等の樹脂被覆線の接続工法
JPS6016090B2 (ja) プラスチックフィルムコンデンサ−のリ−ド線引出方法