JPS6033294A - 単結晶半導体引上装置 - Google Patents

単結晶半導体引上装置

Info

Publication number
JPS6033294A
JPS6033294A JP13925583A JP13925583A JPS6033294A JP S6033294 A JPS6033294 A JP S6033294A JP 13925583 A JP13925583 A JP 13925583A JP 13925583 A JP13925583 A JP 13925583A JP S6033294 A JPS6033294 A JP S6033294A
Authority
JP
Japan
Prior art keywords
crucible
double
single crystal
internal
pulling device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13925583A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0359040B2 (enrdf_load_stackoverflow
Inventor
Hidekazu Taji
田路　英一
Mitsuhiro Yamato
充博 大和
Osamu Suzuki
修 鈴木
Masaharu Watanabe
正晴 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP13925583A priority Critical patent/JPS6033294A/ja
Publication of JPS6033294A publication Critical patent/JPS6033294A/ja
Publication of JPH0359040B2 publication Critical patent/JPH0359040B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP13925583A 1983-07-29 1983-07-29 単結晶半導体引上装置 Granted JPS6033294A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13925583A JPS6033294A (ja) 1983-07-29 1983-07-29 単結晶半導体引上装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13925583A JPS6033294A (ja) 1983-07-29 1983-07-29 単結晶半導体引上装置

Publications (2)

Publication Number Publication Date
JPS6033294A true JPS6033294A (ja) 1985-02-20
JPH0359040B2 JPH0359040B2 (enrdf_load_stackoverflow) 1991-09-09

Family

ID=15241041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13925583A Granted JPS6033294A (ja) 1983-07-29 1983-07-29 単結晶半導体引上装置

Country Status (1)

Country Link
JP (1) JPS6033294A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6311595A (ja) * 1986-07-01 1988-01-19 Sumitomo Electric Ind Ltd 不純物の均一ド−ピング法
JPH01215788A (ja) * 1988-02-22 1989-08-29 Toshiba Corp 結晶引上げ方法
JPH026382A (ja) * 1988-06-13 1990-01-10 Toshiba Ceramics Co Ltd 単結晶引上げ装置
JPH0248492A (ja) * 1988-08-08 1990-02-19 Osaka Titanium Co Ltd 単結晶成長装置
JPH0283295A (ja) * 1988-09-20 1990-03-23 Toshiba Ceramics Co Ltd 単結晶引上げ装置
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
DE19700403B4 (de) * 1996-01-12 2013-04-11 Mitsubishi Materials Silicon Corp. Einkristallziehvorrichtung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5547300A (en) * 1978-09-27 1980-04-03 Sony Corp Crystal pulling device
JPS57149894A (en) * 1981-03-09 1982-09-16 Nippon Telegr & Teleph Corp <Ntt> Method and apparatus for growing grystal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5547300A (en) * 1978-09-27 1980-04-03 Sony Corp Crystal pulling device
JPS57149894A (en) * 1981-03-09 1982-09-16 Nippon Telegr & Teleph Corp <Ntt> Method and apparatus for growing grystal

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6311595A (ja) * 1986-07-01 1988-01-19 Sumitomo Electric Ind Ltd 不純物の均一ド−ピング法
JPH01215788A (ja) * 1988-02-22 1989-08-29 Toshiba Corp 結晶引上げ方法
JPH026382A (ja) * 1988-06-13 1990-01-10 Toshiba Ceramics Co Ltd 単結晶引上げ装置
JPH0248492A (ja) * 1988-08-08 1990-02-19 Osaka Titanium Co Ltd 単結晶成長装置
JPH0283295A (ja) * 1988-09-20 1990-03-23 Toshiba Ceramics Co Ltd 単結晶引上げ装置
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
DE19700403B4 (de) * 1996-01-12 2013-04-11 Mitsubishi Materials Silicon Corp. Einkristallziehvorrichtung

Also Published As

Publication number Publication date
JPH0359040B2 (enrdf_load_stackoverflow) 1991-09-09

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