JPH0359040B2 - - Google Patents

Info

Publication number
JPH0359040B2
JPH0359040B2 JP58139255A JP13925583A JPH0359040B2 JP H0359040 B2 JPH0359040 B2 JP H0359040B2 JP 58139255 A JP58139255 A JP 58139255A JP 13925583 A JP13925583 A JP 13925583A JP H0359040 B2 JPH0359040 B2 JP H0359040B2
Authority
JP
Japan
Prior art keywords
crucible
single crystal
silicon
molten silicon
inner crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58139255A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6033294A (ja
Inventor
Hidekazu Taji
Mitsuhiro Yamato
Osamu Suzuki
Masaharu Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP13925583A priority Critical patent/JPS6033294A/ja
Publication of JPS6033294A publication Critical patent/JPS6033294A/ja
Publication of JPH0359040B2 publication Critical patent/JPH0359040B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP13925583A 1983-07-29 1983-07-29 単結晶半導体引上装置 Granted JPS6033294A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13925583A JPS6033294A (ja) 1983-07-29 1983-07-29 単結晶半導体引上装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13925583A JPS6033294A (ja) 1983-07-29 1983-07-29 単結晶半導体引上装置

Publications (2)

Publication Number Publication Date
JPS6033294A JPS6033294A (ja) 1985-02-20
JPH0359040B2 true JPH0359040B2 (enrdf_load_stackoverflow) 1991-09-09

Family

ID=15241041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13925583A Granted JPS6033294A (ja) 1983-07-29 1983-07-29 単結晶半導体引上装置

Country Status (1)

Country Link
JP (1) JPS6033294A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6311595A (ja) * 1986-07-01 1988-01-19 Sumitomo Electric Ind Ltd 不純物の均一ド−ピング法
JP2755588B2 (ja) * 1988-02-22 1998-05-20 株式会社東芝 結晶引上げ方法
JPH026382A (ja) * 1988-06-13 1990-01-10 Toshiba Ceramics Co Ltd 単結晶引上げ装置
JPH0248492A (ja) * 1988-08-08 1990-02-19 Osaka Titanium Co Ltd 単結晶成長装置
JPH0825835B2 (ja) * 1988-09-20 1996-03-13 東芝セラミックス株式会社 単結晶引上げ装置
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
JPH09194289A (ja) * 1996-01-12 1997-07-29 Mitsubishi Materials Shilicon Corp 単結晶引上装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6018634B2 (ja) * 1978-09-27 1985-05-11 ソニー株式会社 結晶引上げ装置
JPS57149894A (en) * 1981-03-09 1982-09-16 Nippon Telegr & Teleph Corp <Ntt> Method and apparatus for growing grystal

Also Published As

Publication number Publication date
JPS6033294A (ja) 1985-02-20

Similar Documents

Publication Publication Date Title
US6702892B2 (en) Production device for high-quality silicon single crystals
US4645560A (en) Liquid encapsulation method for growing single semiconductor crystals
US3798007A (en) Method and apparatus for producing large diameter monocrystals
JP2012126644A (ja) 炭素ドーピング、抵抗率制御、温度勾配制御を伴う、剛性サポートを備える半導体結晶を成長させるための方法および装置
KR20110094025A (ko) 단결정 제조용 상부히터, 단결정 제조장치 및 단결정 제조방법
US6607594B2 (en) Method for producing silicon single crystal
JPH0359040B2 (enrdf_load_stackoverflow)
KR20070013843A (ko) 실리콘 단결정 잉곳 및 그 성장방법
JPH034517B2 (enrdf_load_stackoverflow)
JPH01317189A (ja) シリコン単結晶の製造方法及び装置
KR100906281B1 (ko) 실리콘 단결정 잉곳 성장장치의 열실드 구조물 및 이를 이용한 실리콘 단결정 잉곳 성장장치
JPH0142916B2 (enrdf_load_stackoverflow)
JPS5891097A (ja) 単結晶製造装置
JPS61261288A (ja) シリコン単結晶引上装置
JP3018738B2 (ja) 単結晶製造装置
JPS5950627B2 (ja) 単結晶シリコン引上装置
JPH0157079B2 (enrdf_load_stackoverflow)
TWI701363B (zh) 矽單晶長晶方法
JPH0138078B2 (enrdf_load_stackoverflow)
KR100810565B1 (ko) 실리콘 단결정 잉곳 성장장치 및 실리콘 단결정 잉곳의 결함제어방법
JPH08750B2 (ja) 高圧合成装置を用いた単結晶育成方法および装置
KR101100862B1 (ko) 실리콘 단결정 잉곳의 제조방법
JPS6033295A (ja) 単結晶半導体引上装置
JPS6033287A (ja) 単結晶半導体の製造方法
KR100468117B1 (ko) 고품질 실리콘 단결정의 제조방법