JPS6032279B2 - Ｍｏｓ記憶器の番地指定回路 - Google Patents

Ｍｏｓ記憶器の番地指定回路

Info

Publication number
JPS6032279B2
JPS6032279B2 JP52109774A JP10977477A JPS6032279B2 JP S6032279 B2 JPS6032279 B2 JP S6032279B2 JP 52109774 A JP52109774 A JP 52109774A JP 10977477 A JP10977477 A JP 10977477A JP S6032279 B2 JPS6032279 B2 JP S6032279B2
Authority
JP
Japan
Prior art keywords
inverted
circuit
transistor
stage
address
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52109774A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5336147A (en
Inventor
リユ−デイガ−・ホフマン
パウルウエルナ−・フオン・バツセ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5336147A publication Critical patent/JPS5336147A/ja
Publication of JPS6032279B2 publication Critical patent/JPS6032279B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4082—Address Buffers; level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
JP52109774A 1976-09-15 1977-09-12 Ｍｏｓ記憶器の番地指定回路 Expired JPS6032279B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2641524.7 1976-09-15
DE2641524A DE2641524B1 (de) 1976-09-15 1976-09-15 Anordnung zur Adressierung eines MOS-Speichers

Publications (2)

Publication Number Publication Date
JPS5336147A JPS5336147A (en) 1978-04-04
JPS6032279B2 true JPS6032279B2 (ja) 1985-07-26

Family

ID=5987981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52109774A Expired JPS6032279B2 (ja) 1976-09-15 1977-09-12 Ｍｏｓ記憶器の番地指定回路

Country Status (4)

Country Link
JP (1) JPS6032279B2 (enrdf_load_stackoverflow)
DE (1) DE2641524B1 (enrdf_load_stackoverflow)
FR (1) FR2365179A1 (enrdf_load_stackoverflow)
GB (1) GB1588183A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101412460B1 (ko) * 2012-05-21 2014-07-01 주식회사 뉴핫맥스 발열 코일의 처짐 방지 구조를 갖는 히터

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6413289A (en) * 1988-05-06 1989-01-18 Nec Corp Decoder circuit
KR100206598B1 (ko) * 1995-12-29 1999-07-01 김영환 워드라인 구동 장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3902082A (en) * 1974-02-11 1975-08-26 Mostek Corp Dynamic data input latch and decoder

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101412460B1 (ko) * 2012-05-21 2014-07-01 주식회사 뉴핫맥스 발열 코일의 처짐 방지 구조를 갖는 히터

Also Published As

Publication number Publication date
JPS5336147A (en) 1978-04-04
DE2641524B1 (de) 1977-11-17
GB1588183A (en) 1981-04-15
DE2641524C2 (enrdf_load_stackoverflow) 1978-07-13
FR2365179B1 (enrdf_load_stackoverflow) 1983-05-13
FR2365179A1 (fr) 1978-04-14

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