JPS6030123A - 薄膜半導体生成装置 - Google Patents

薄膜半導体生成装置

Info

Publication number
JPS6030123A
JPS6030123A JP58138564A JP13856483A JPS6030123A JP S6030123 A JPS6030123 A JP S6030123A JP 58138564 A JP58138564 A JP 58138564A JP 13856483 A JP13856483 A JP 13856483A JP S6030123 A JPS6030123 A JP S6030123A
Authority
JP
Japan
Prior art keywords
roll
grid electrode
wound
electrode
grid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58138564A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0377656B2 (enrdf_load_stackoverflow
Inventor
Osamu Nabeta
鍋田　修
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Corporate Research and Development Ltd
Priority to JP58138564A priority Critical patent/JPS6030123A/ja
Publication of JPS6030123A publication Critical patent/JPS6030123A/ja
Publication of JPH0377656B2 publication Critical patent/JPH0377656B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
JP58138564A 1983-07-28 1983-07-28 薄膜半導体生成装置 Granted JPS6030123A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58138564A JPS6030123A (ja) 1983-07-28 1983-07-28 薄膜半導体生成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58138564A JPS6030123A (ja) 1983-07-28 1983-07-28 薄膜半導体生成装置

Publications (2)

Publication Number Publication Date
JPS6030123A true JPS6030123A (ja) 1985-02-15
JPH0377656B2 JPH0377656B2 (enrdf_load_stackoverflow) 1991-12-11

Family

ID=15225086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58138564A Granted JPS6030123A (ja) 1983-07-28 1983-07-28 薄膜半導体生成装置

Country Status (1)

Country Link
JP (1) JPS6030123A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63246814A (ja) * 1987-04-02 1988-10-13 Matsushita Electric Ind Co Ltd 薄膜形成装置
WO2014065044A1 (ja) * 2012-10-25 2014-05-01 東レエンジニアリング株式会社 プラズマｃｖｄ装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63246814A (ja) * 1987-04-02 1988-10-13 Matsushita Electric Ind Co Ltd 薄膜形成装置
WO2014065044A1 (ja) * 2012-10-25 2014-05-01 東レエンジニアリング株式会社 プラズマｃｖｄ装置
JP2014084516A (ja) * 2012-10-25 2014-05-12 Toray Eng Co Ltd プラズマｃｖｄ装置

Also Published As

Publication number Publication date
JPH0377656B2 (enrdf_load_stackoverflow) 1991-12-11

Similar Documents

Publication Publication Date Title
EP0478010B1 (en) Process for producing a continuous web of an electrically insulated metallic substrate
US4995341A (en) Microwave plasma CVD apparatus for the formation of a large-area functional deposited film
JPS5934421B2 (ja) 薄膜製造法
JPS6030123A (ja) 薄膜半導体生成装置
US5718769A (en) Plasma processing apparatus
JPH0769790A (ja) 薄膜作製装置
JPH1041237A (ja) 成膜装置および太陽電池
JP2000236105A (ja) 薄膜太陽電池の製造方法および装置
JPS59219927A (ja) プラズマｃｖｄ装置
WO2020184705A1 (ja) バックコンタクト型太陽電池セルの製造方法
JP2002289530A (ja) プラズマｃｖｄ装置及び成膜方法
JP3658249B2 (ja) 半導体層の製造方法、光起電力素子の製造方法及び半導体層の製造装置
JPS6066422A (ja) 半導体製造法
JP4282047B2 (ja) プラズマ処理装置および半導体装置の製造方法
JP3073675B2 (ja) 半導体薄膜製造装置用トレイ
JP2011208197A (ja) インライン型プラズマ成膜装置およびこれを用いたプラズマ成膜方法
JPH10317150A (ja) 成膜方法及び成膜装置
JP3059297B2 (ja) 非晶質シリコン系半導体薄膜の形成方法
JP2901984B2 (ja) 導電性薄膜製造装置
JPS61115354A (ja) 非晶質半導体太陽電池
JP3679937B2 (ja) 非晶質シリコン太陽電池及びその製造方法
JPS6139586A (ja) アモルフアス半導体の製造方法
JPS60115220A (ja) 三極グロ−放電型表面処理装置
JP3984761B2 (ja) 光起電力素子、その製造方法、およびその製造装置
JPS62205618A (ja) プラズマｃｖｄ装置