JPS6027103A - Thin film metal resistor - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a metal thin film resistor using an alloy thin film consisting of four components: nickel (Ni), chromium (Cr), tantalum (Ta) and silicon (Si).

There has been remarkable progress in thin film resistors in recent years.
A tantalum nitride thin film resistor was developed as an unprecedented resistor, and Cr7Si was developed as a resistor with high specific resistance.
(J-Zermet has been put into practical use.

In other words, tantalum nitride thin film resistors have a good temperature coefficient of resistance and excellent stability. Active sputtering is usually used to produce nitride mental thin films, and requires strict control over the introduction and control of active gas into a vacuum chamber. Furthermore, Cr-8iO thermets and resistors have many problems in terms of manufacturing technology, such as low stability and poor reproducibility.

By the way, the recently invented two-component thin film resistor made of silicon and one of tantalum, niobium, titanium, zircon, molybdenum, tungsten, etc. compensated for the above defects and is currently the best thin film resistor. This is something that can be highly evaluated as a body.

That is, by adjusting the heat treatment humidity, it is possible to maintain a low temperature coefficient of resistance over a wide solid resistance range.

However, the stability of a resistor is related to the heat treatment temperature, and if you want to achieve commercial stability, the heat treatment temperature also depends on the temperature.The composition or specific resistance that corresponds to the low temperature coefficient of resistance at that time is determined by yourself. freedom will disappear. In other words, for a two-component @gold thin film resistor, the most stable heat treatment is performed, and when the temperature coefficient of resistance is taken into account, the specific resistance and composition Q are determined by itself, and therefore the setting d1 of the thin film integrated circuit Also, there are drawbacks that impose great constraints on the manufacturing of individual resistors.

The present invention has overcome the above-mentioned drawbacks of the conventional technology, and has developed a resistor made of a Shinkin metal thin film made of nickel, chromium, and tantalum silicon. Is it small and stable, especially +111? The object of the present invention is to provide an all-thin film resistor with excellent wet load life characteristics.

In order to achieve the above object, the present invention provides nickel 58
〜81 JM%, Chromium 12-18 Hara 1,000≠, Tantalum 2
A metal thin film resistor is constructed using an alloy thin film consisting of four components of up to 21 atomic % and 19 atomic % or less of silicon and subjected to heat treatment.

Examples of the present invention will be described below with reference to tables and drawings.

Nickel 5b~811JA%, chromium 12~181J
X 1,000%, tantalum 2-21 atoms and silicon 19
Gold NA Expo using alloy thin film VC in the sub-atomic composition range
The μ resistor has a temperature coefficient of resistance 'L' CR of ±i'oop
Calculate in μ/℃. Furthermore, in order to make the resistance coefficient constant ゛l'C sterile and to obtain high stability, it can be realized by applying heat treatment.

Table 1 shows the temperature coefficient of resistance TC at the heat treatment temperature of the film composition.
R (Ω/°C) and surface resistance value (Ω/°C) are shown. This is a sample obtained by applying a heat treatment for 3 minutes in the atmosphere at the temperature shown in Table 1 on a sample deposited for 1 hour by cathode sputtering method.

Table 1 As is clear from Table 1, the surface resistance value is about 22~
30 (977 mouth 2 filter, resistance temperature coefficient is -3,0 to 1
0. Of, pp/'C), it is possible to obtain a resistor with low fluctuation and low temperature coefficient of resistance.

Here, a method for preparing a sample according to the present invention will be explained. The sputtering conditions are 3 x 1 inside the bell jar in advance.
After evacuation to 0-' Torr, flat purity argon gas k 1B ~ 20
．． 05 to 0.5 mA/cffl-C1lb sputtering. The film formation rate is 50 to 1 soA/m. The film composition was determined by using metals such as nickel, chromium, tantalum, and silicon and changing their area ratios. Further, the heat treatment was carried out in the air at a predetermined temperature for 3 minutes.

Furthermore, effects similar to -1 could be obtained by heating the resistive substrate at a predetermined temperature for several minutes in a vacuum or by heating the resistive substrate during sputtering.

Next, in order to show the stability of the medullary N membrane as a resistor, FIGS. 2 and 3 show the results of a high temperature storage test and a humidity resistance load life test. The composition ratio of each component at this time is 1 nickel 74 atomic percent, chromium 16 atomic percent, tantalum 9W,
The silicon lyA material was heat-treated at 500° C. for 3 minutes in the atmosphere, and its resistance was 3Ω.

Figure 2 is a graph of the results of a high-temperature storage test.It shows a direct change in resistance when a sample with a fixed resistor of 3Ω is left in the atmosphere for 1,000 hours under no load at 175''C. As is clear from the graph (7), the rate of change is approximately 0.25% or less, indicating excellent stability.

Figure 3 shows the results of a humidity-resistant load life test for Class 7, in which the rated voltage was loaded for a total of 1.5 hours and the load was applied for 0.5 hours in an atmosphere with an ambient temperature of 40°C and a relative humidity of 90 to 95%. Det
, shows the resistance change rate when repeated for ooo time. In the graph, the rate of change for 7 is approximately 0.06% or less, which is 6.
C: It can be said that it is very excellent.

As described above, the metal thin film resistance rod of the present invention has a low resistance polarization coefficient, excellent stability, and particularly excellent moisture load life characteristics.

As is clear from the above examples, the present invention is a resistor made of a thin alloy film of nickel, chromium, tantalum and silicon. It is possible to write all metal thin film resistors with small variations in coefficient and number, excellent stability, and especially excellent moisture resistance and load life characteristics.

[Brief explanation of the drawing]

The IT diagram is a graph showing the relationship between the composition ratio and specific resistance of a conventional silicon/tantalum metal thin film resistor, and Figure 2 is a graph showing the results of a high-temperature storage test of Ming's metal thin film resistor. is a graph showing the results of a humidity resistance load life test of the metal thin film resistor of the present invention. Agent Masumushi Moritani - Yudai l Figure 8i ((Lt”/,) - 11

Claims (1)

[Claims] Nickel 58-81 atomic%, chromium 12-18 atomic%,
1. A thin film resistor characterized in that it is constructed using an alloy thin film consisting of four components: tantalum at 2 to 21 atom % and silicon at 19 atom % or less.