JPS60260181A - 半導体発光装置 - Google Patents

半導体発光装置

Info

Publication number
JPS60260181A
JPS60260181A JP11601984A JP11601984A JPS60260181A JP S60260181 A JPS60260181 A JP S60260181A JP 11601984 A JP11601984 A JP 11601984A JP 11601984 A JP11601984 A JP 11601984A JP S60260181 A JPS60260181 A JP S60260181A
Authority
JP
Japan
Prior art keywords
layer
type
active layer
light emitting
confinement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11601984A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0523074B2 (https=
Inventor
Kunihiko Kodama
邦彦 児玉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11601984A priority Critical patent/JPS60260181A/ja
Publication of JPS60260181A publication Critical patent/JPS60260181A/ja
Publication of JPH0523074B2 publication Critical patent/JPH0523074B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3409—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers special GRINSCH structures

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • Geometry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP11601984A 1984-06-06 1984-06-06 半導体発光装置 Granted JPS60260181A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11601984A JPS60260181A (ja) 1984-06-06 1984-06-06 半導体発光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11601984A JPS60260181A (ja) 1984-06-06 1984-06-06 半導体発光装置

Publications (2)

Publication Number Publication Date
JPS60260181A true JPS60260181A (ja) 1985-12-23
JPH0523074B2 JPH0523074B2 (https=) 1993-03-31

Family

ID=14676780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11601984A Granted JPS60260181A (ja) 1984-06-06 1984-06-06 半導体発光装置

Country Status (1)

Country Link
JP (1) JPS60260181A (https=)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62291190A (ja) * 1986-06-11 1987-12-17 Fujitsu Ltd 半導体発光装置
JPS6323384A (ja) * 1986-07-16 1988-01-30 Sony Corp ダブルヘテロ接合型半導体レ−ザ
JPS6327804A (ja) * 1986-07-22 1988-02-05 Matsushita Electric Ind Co Ltd 半導体装置
JPS6414137A (en) * 1987-07-07 1989-01-18 Dainippon Ink & Chemicals Electrically conductive concrete
JPH01217984A (ja) * 1988-02-26 1989-08-31 Toshiba Corp 半導体レーザ素子
JPH01217986A (ja) * 1988-02-26 1989-08-31 Toshiba Corp 半導体レーザ素子
JPH01220490A (ja) * 1988-02-29 1989-09-04 Toshiba Corp 半導体レーザ素子及びその製造方法
JPH02248095A (ja) * 1989-03-22 1990-10-03 Hikari Gijutsu Kenkyu Kaihatsu Kk 半導体レーザ
JPH0482286A (ja) * 1990-07-25 1992-03-16 Hikari Gijutsu Kenkyu Kaihatsu Kk 半導体レーザ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130456U (https=) * 1981-02-06 1982-08-14
JPS57199290A (en) * 1981-05-29 1982-12-07 Western Electric Co Light emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130456U (https=) * 1981-02-06 1982-08-14
JPS57199290A (en) * 1981-05-29 1982-12-07 Western Electric Co Light emitting device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62291190A (ja) * 1986-06-11 1987-12-17 Fujitsu Ltd 半導体発光装置
JPS6323384A (ja) * 1986-07-16 1988-01-30 Sony Corp ダブルヘテロ接合型半導体レ−ザ
JPS6327804A (ja) * 1986-07-22 1988-02-05 Matsushita Electric Ind Co Ltd 半導体装置
JPS6414137A (en) * 1987-07-07 1989-01-18 Dainippon Ink & Chemicals Electrically conductive concrete
JPH01217984A (ja) * 1988-02-26 1989-08-31 Toshiba Corp 半導体レーザ素子
JPH01217986A (ja) * 1988-02-26 1989-08-31 Toshiba Corp 半導体レーザ素子
JPH01220490A (ja) * 1988-02-29 1989-09-04 Toshiba Corp 半導体レーザ素子及びその製造方法
JPH02248095A (ja) * 1989-03-22 1990-10-03 Hikari Gijutsu Kenkyu Kaihatsu Kk 半導体レーザ
JPH0482286A (ja) * 1990-07-25 1992-03-16 Hikari Gijutsu Kenkyu Kaihatsu Kk 半導体レーザ

Also Published As

Publication number Publication date
JPH0523074B2 (https=) 1993-03-31

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