JPS60258917A - ガス不透過性半導体製造用ＳｉＣ−Ｓｉ系均熱管の製造方法 - Google Patents

ガス不透過性半導体製造用ＳｉＣ−Ｓｉ系均熱管の製造方法

Info

Publication number
JPS60258917A
JPS60258917A JP60056907A JP5690785A JPS60258917A JP S60258917 A JPS60258917 A JP S60258917A JP 60056907 A JP60056907 A JP 60056907A JP 5690785 A JP5690785 A JP 5690785A JP S60258917 A JPS60258917 A JP S60258917A
Authority
JP
Japan
Prior art keywords
copper
ppm
tube
alkali metal
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60056907A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6410930B2 (en:Method
Inventor
Isao Sakashita
坂下　伊佐男
Nobuo Kimura
信夫 木村
Teruyasu Tamamizu
玉水　照康
Hidekazu Taji
田路　英一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP60056907A priority Critical patent/JPS60258917A/ja
Publication of JPS60258917A publication Critical patent/JPS60258917A/ja
Publication of JPS6410930B2 publication Critical patent/JPS6410930B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P95/90—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP60056907A 1985-03-20 1985-03-20 ガス不透過性半導体製造用ＳｉＣ−Ｓｉ系均熱管の製造方法 Granted JPS60258917A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60056907A JPS60258917A (ja) 1985-03-20 1985-03-20 ガス不透過性半導体製造用ＳｉＣ−Ｓｉ系均熱管の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60056907A JPS60258917A (ja) 1985-03-20 1985-03-20 ガス不透過性半導体製造用ＳｉＣ−Ｓｉ系均熱管の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9823075A Division JPS5222477A (en) 1975-08-13 1975-08-13 Sic-si type equalizing tube for manufacturing gas impermeable semi conductors

Publications (2)

Publication Number Publication Date
JPS60258917A true JPS60258917A (ja) 1985-12-20
JPS6410930B2 JPS6410930B2 (en:Method) 1989-02-22

Family

ID=13040521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60056907A Granted JPS60258917A (ja) 1985-03-20 1985-03-20 ガス不透過性半導体製造用ＳｉＣ−Ｓｉ系均熱管の製造方法

Country Status (1)

Country Link
JP (1) JPS60258917A (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112159232A (zh) * 2020-09-29 2021-01-01 南通三责精密陶瓷有限公司 一种高纯高致密碳化硅陶瓷及其制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112159232A (zh) * 2020-09-29 2021-01-01 南通三责精密陶瓷有限公司 一种高纯高致密碳化硅陶瓷及其制造方法

Also Published As

Publication number Publication date
JPS6410930B2 (en:Method) 1989-02-22

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