JPS60254487A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS60254487A
JPS60254487A JP59112489A JP11248984A JPS60254487A JP S60254487 A JPS60254487 A JP S60254487A JP 59112489 A JP59112489 A JP 59112489A JP 11248984 A JP11248984 A JP 11248984A JP S60254487 A JPS60254487 A JP S60254487A
Authority
JP
Japan
Prior art keywords
circuit
control signal
output
signal
input terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59112489A
Other languages
Japanese (ja)
Inventor
Takashi Harada
尚 原田
Koichi Hanamura
花村 公一
Toshio Ichiyama
市山 寿雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59112489A priority Critical patent/JPS60254487A/en
Publication of JPS60254487A publication Critical patent/JPS60254487A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Sources (AREA)
  • Static Random-Access Memory (AREA)
  • Microcomputers (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To form a circuit which generates a control signal for low power consumption by generating and outputting the signal which sets an external semiconductor integrated circuit in power-down mode when this circuit executes a specific instruction. CONSTITUTION:An input terminal 1 to which the signal indicating the state of an interrupt enable flag IF is inputted is held at an ''L'' level when the IF is set. Further, there are an input terminal 4 for inputting the inversion signal of a masking interrupt request input INTR, an input terminal 3 for inputting a signal which is set to the ''L'' level when a halt instruction is executed to stop a microprocessor, etc., an input terminal 4 for a mode switching signal, an input terminal 5 for inputting a masking disabling request input NMI signal, an input terminal 6 for a reset signal, an output terminal 7 for a power-down signal, an input terminal for a clock phi, and an input terminal -8 for the inverted clock -phi of the clock phi. Consequently, the power-down signal is generated and outputted when the halt instruction is executed.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は、半導体集積回路、特に相補形MO3集積回
路(0MO3I C)の応用回路に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor integrated circuit, particularly to an application circuit of a complementary MO3 integrated circuit (0MO3IC).

〔従来技術〕[Prior art]

従来、例えばマイクロプロセッサにおいては、単一導電
形MO3I−ランジスタによる回路構成をとっており、
低消費電力化が目的の回路は存在していないのが実情で
ある。
Conventionally, for example, a microprocessor has a circuit configuration using a single conductivity type MO3I-transistor.
The reality is that there is no circuit whose purpose is to reduce power consumption.

このような単一導電形MO3)ランジスタで構成された
半導体集積回路において、消費電力の低減を図ろうとす
る場合には相補形MO3)ランジスタ(0MO3IC)
で構成する方法が考えられるが、この場合、半導体集積
回路を消費電力の小さい状態に設定するための信号を別
途作成し、これを半導体集積回路に与えて該回路を制御
してやる必要がある。また集積回路の種類によってはチ
ップサイズ等との関係で、完全CMO3化が不可能で、
片側を0MO3ICで残りを単一導電形MOSトランジ
スタで構成しなければならないことがあり、かかる回路
においても上記の方法によって低消費電力化を図ること
が可能である。
In a semiconductor integrated circuit configured with such a single conductivity type MO3) transistor, if you want to reduce power consumption, use a complementary type MO3) transistor (0MO3IC).
However, in this case, it is necessary to separately create a signal for setting the semiconductor integrated circuit to a state with low power consumption, and to apply this signal to the semiconductor integrated circuit to control the circuit. Also, depending on the type of integrated circuit, it may not be possible to completely convert it to CMO3 due to the chip size, etc.
It may be necessary to configure one side with a 0MO3 IC and the remaining with a single conductivity type MOS transistor, and even in such a circuit, it is possible to reduce power consumption by the above method.

〔発明の概要〕[Summary of the invention]

この発明はかかる点に鑑みてなされたもので、消費電力
を低減できるスイッチ手段を有する外部半導体集積回路
が特定命令を実行している時に、上記スイッチ手段を制
御する信号を作成し出力するようにすることにより、完
全CMO3化集積回路ばかりでなく、不完全CMO3化
集積回路の低消費電力化をも可能とできる半導体集積回
路を提供することを目的としている。
The present invention has been made in view of the above, and is designed to create and output a signal for controlling the switch means when an external semiconductor integrated circuit having a switch means capable of reducing power consumption is executing a specific command. By doing so, it is an object of the present invention to provide a semiconductor integrated circuit that can reduce the power consumption not only of a complete CMO3 integrated circuit but also of an incomplete CMO3 integrated circuit.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の実施例を図について説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

第1図は本発明の一実施例による半導体集積回路を示す
。図において、1はインターラブド・イネーブルフラグ
(以下TFという)の状態を示す信号が入力される入力
端子で、IFがセットされると端子1は“L″レベルな
る。2はマスク可能割り込み要求入力(以下lNTRと
いう)の反転信号が入力される入力端子、3はマイクロ
プロセッサ等を停止するホルト(以下HALTという)
命令が実行された時に“L″レベルセットされる信号が
入力される入力端子、4はモード切換え用信号が入力さ
れる入力端子、5はマスク不能割り込み要求入力(以下
NMIという)信号が入力される入力端子、6はリセン
ト信号の入力端子、7はパワーダウン信号の出力端子、
8はクロックφの入力端子、■はクロックφの反転クロ
ック■の入力端子である。
FIG. 1 shows a semiconductor integrated circuit according to an embodiment of the present invention. In the figure, 1 is an input terminal to which a signal indicating the state of an interwoven enable flag (hereinafter referred to as TF) is input, and when IF is set, terminal 1 becomes "L" level. 2 is an input terminal to which an inverted signal of a maskable interrupt request input (hereinafter referred to as lNTR) is input, and 3 is a halt (hereinafter referred to as HALT) for stopping the microprocessor, etc.
An input terminal to which a signal that is set to "L" level when an instruction is executed is input; 4 is an input terminal to which a mode switching signal is input; 5 is an input terminal to which a non-maskable interrupt request input (hereinafter referred to as NMI) signal is input. 6 is an input terminal for recent signals, 7 is an output terminal for power down signals,
8 is an input terminal of the clock φ, and 2 is an input terminal of the inverted clock φ of the clock φ.

また9はパワーダウン(以下PDという)信号(第1制
御信号)を発生するパワーダウン信号発生回路、10は
PDを解除する信号(第2制御信号)を発生するパワー
ダウン解除信号発生回路、11はPDを実行するがどう
かを切換える信号(イネーブル信号)を発生するモード
切換回路、12は上記信号発生回路9.10の出力を保
持するランチ回路、13はラッチ回路12の出力とモー
ド切換回路11の出力を2人力とするNOR回路である
Further, 9 is a power down signal generation circuit that generates a power down (hereinafter referred to as PD) signal (first control signal), 10 is a power down release signal generation circuit that generates a signal (second control signal) for canceling PD, 11 12 is a launch circuit that holds the outputs of the signal generation circuits 9 and 10, and 13 is the output of the latch circuit 12 and the mode switching circuit 11. This is a NOR circuit that requires two people to output the output.

また第2図(a)〜(1はクロックφ、パワーダウン信
号発生回路9内の各部A−Eの信号状態及び出力端+’
l)(,4に態、)ケイ、ア7.ヶヤー、や社。1次に
動作について説明する。
2(a) to (1 is the clock φ, the signal state of each part A to E in the power down signal generation circuit 9, and the output terminal +'
l) (,4 ni state,) Kay, a7. Kaya, Yasha. The first operation will be explained.

パワーダウン信号発生回路9において、A点では、入力
端子3の信号状態が現われ、これはHALT命令が実行
されると反転クロック正に同期してII L 11レベ
ルとなる(第2図+81. (b)参照)。B点では、
クロックφがH″でオン状態となるトランスファーゲー
ト14及びインバータ152反転クロック下が“H”で
オンになるトランスファーゲー1−16を通過した後の
入力端子3の信号状態が現われる(第2図(C)参照)
。0点ではB点の反転信号とA点の反転信号の積をとる
AND回路11の出力が現われる(第2図(d+参照)
。D点では、トランスファーゲート18.インバータ1
9゜トランスファーゲート20を通過した後のAND回
路17の信号が現われ、これはE点でクロックφと同期
をとるためにインバータ21及びトランスファーゲート
22を通過し、その後波形整形のインバータ23.正論
理とするためのインバータ24を通過してランチ回路1
2の入力となっている(第2図(e) Tf)参照)。
In the power-down signal generation circuit 9, the signal state of the input terminal 3 appears at point A, and when the HALT command is executed, it becomes the II L 11 level in positive synchronization with the inverted clock (Fig. 2 +81. b)). At point B,
The signal state of the input terminal 3 appears after passing through the transfer gate 14 and inverter 152, which are turned on when the clock φ is "H", and the transfer gate 1-16, which is turned on when the inverted clock is "H" (see FIG. 2). See C)
. At point 0, the output of the AND circuit 11, which takes the product of the inverted signal at point B and the inverted signal at point A, appears (see Figure 2 (d+)).
. At point D, transfer gate 18. Inverter 1
After passing through the 9° transfer gate 20, the signal from the AND circuit 17 appears, which passes through an inverter 21 and a transfer gate 22 in order to be synchronized with the clock φ at point E, and is then passed through an inverter 23 for waveform shaping. The launch circuit 1 passes through the inverter 24 for positive logic.
2 (see FIG. 2(e) Tf)).

またPD解除信号を発生する回路1oは、下記の論理を
作っている。
The circuit 1o that generates the PD release signal has the following logic.

(IF) * (INTR) + (NMI ) + 
(RESET )+:論理和 *:論理積 そして通常は、モード切換回路11において入力端子4
は“L”レベルとし、出カフの状態は信号発生回路9.
10で制御される。
(IF) * (INTR) + (NMI) +
(RESET) +: logical sum *: logical product and normally, in the mode switching circuit 11, the input terminal
is set to "L" level, and the state of the output cuff is determined by the signal generating circuit 9.
Controlled by 10.

またラッチ回路12は信号発生回路9,1oの出力信号
を保持し、次の状態に変化するまで、現在の状態を保つ
ようになっている。
Further, the latch circuit 12 holds the output signals of the signal generation circuits 9 and 1o, and maintains the current state until it changes to the next state.

またモード切換回路11において、入力端子4を“H”
とすると、他の入力に無関係に出方端子7は″Lルベル
となって、PDは行われなくなり、従来の消費電力を考
えていない回路と同じ機能となる。
In addition, in the mode switching circuit 11, the input terminal 4 is set to “H”.
In this case, the output terminal 7 becomes "L level" regardless of other inputs, PD is no longer performed, and the function is the same as that of a conventional circuit that does not take power consumption into consideration.

以上のような本実施例の装置では、HALT実行時にパ
ワーダウン信号を作成出力することができ、これを低消
費電力化のための制御信号として用いることができる。
In the device of this embodiment as described above, a power down signal can be generated and outputted during HALT execution, and this can be used as a control signal for reducing power consumption.

なお上記実施例ではPDモードを解除する論理が入力1
,2,5,6.の信号状態で行っていたが、他の制御信
号で設定しても同様の効果は得られる。
In the above embodiment, the logic for canceling the PD mode is input 1.
, 2, 5, 6. Although this was done using the signal state, similar effects can be obtained by setting with other control signals.

また本発明は完全CMO3化集積回路、不完全CMO3
化集積画集積回路でなく、他の半導体集積回路にて消費
電力を低減する場合にも同様に通用できる。但しこの場
合には勿論この半導体集積回路がパワーダウン信号の入
力端子及びパワーダウン機能を有するものであることが
必要である。
The present invention also provides a complete CMO3 integrated circuit, an incomplete CMO3 integrated circuit, and an incomplete CMO3 integrated circuit.
The present invention can be similarly applied to reducing power consumption in other semiconductor integrated circuits rather than integrated circuits. However, in this case, it is of course necessary that this semiconductor integrated circuit has an input terminal for a power down signal and a power down function.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば、外部半導体集積回路
が特定命令を実行しているときに該回路をパワーダウン
モードに設定するための信号を作成し出力するようにし
たので、低消費電力化のための制御信号を発生する回路
が提供できる効果がある。
As described above, according to the present invention, when the external semiconductor integrated circuit is executing a specific command, a signal for setting the circuit to power down mode is created and output, thereby reducing power consumption. This has the advantage of being able to provide a circuit that generates control signals for this purpose.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例による半導体集積回路の構成
図、第2図は上記装置の動作を説明するためのタイミン
グチャートを示す図である。 9・・・パワーダウン信号発生回路(第1制御信号発生
回路)、10・・・パワーダウン解除信号発生回路(第
2制御信号発生回路)、11・・・モード切換回路(イ
ネーブル信号発生回路)、12・・・ラッチ回路(ラン
チ回路本体)。 代理人 大 岩 増 雄 第1図 第2図 (9)出力 手続補正書(自発) 昭和59年10月9 日 特許庁長官殿 0−1 1、事件の表示 特願昭59−112489号2、発明
の名称 半導体集積回路 3、補正をする者 代表省片山仁へ部 5、補正の対象 明細書の発明の詳細な説明の欄 6、補正の内容 (1) 明細書第4頁第3〜5行の「完全CMOS化が
・・・・・・構成しなければならない」を「完全CMO
8化が不可能な構成としなければならない」に訂正する
。 (2) 同第4頁第13〜14行の[完全CMO3化集
積回路ばかりでなく、不完全・・・]を「完全CMO3
化集積回路と同様に不完全・・・」に訂正する。 以上
FIG. 1 is a block diagram of a semiconductor integrated circuit according to an embodiment of the present invention, and FIG. 2 is a diagram showing a timing chart for explaining the operation of the above device. 9... Power down signal generation circuit (first control signal generation circuit), 10... Power down release signal generation circuit (second control signal generation circuit), 11... Mode switching circuit (enable signal generation circuit) , 12...Latch circuit (launch circuit main body). Agent Masuo Oiwa Figure 1 Figure 2 (9) Amendment to output procedure (voluntary) October 9, 1980 To the Commissioner of the Japan Patent Office 0-1 1. Indication of the case Japanese Patent Application No. 112489-1982 2. Name of the invention: Semiconductor integrated circuit 3, Representative Ministry of the person making the amendment, Hitoshi Katayama Section 5, Detailed explanation of the invention in the specification subject to amendment 6, Contents of the amendment (1) Specification, page 4, Nos. 3 to 5 "Full CMOS conversion must be configured..." in the line "Full CMOS conversion must be configured..."
The configuration must be such that it is impossible to convert into 8. (2) On page 4, lines 13-14, [Not only complete CMO3 integrated circuits, but also incomplete...]
"It's incomplete like integrated circuits..."that's all

Claims (1)

【特許請求の範囲】 (11消費電力を低減できるスイッチ手段を有する外部
半導体集積回路に対し上記スイッチ手段を制御するため
の信号を発生する半導体集積回路であって、上記外部半
導体集積回路が特定命令を実行した時に上記スイッチ手
段を消費電力低減モードに設定するための第1制御信号
を発生する゛第1制御信号発生回路と、外部信号が印加
された時に上記スイッチ手段の消費電力低減モードを解
除するための第2制御信号を発生する第2制御信号発生
回路と、上記第1制御信号又は第2制御信号を保持しそ
れを上記スイッチ手段に与えるラッチ回路とを備えたこ
とを特徴とする半導体集積回路。 (2)上記ランチ回路は、第1制御信号又は第2制御信
号を保持出力するランチ回路本体と、該ラッチ回路本体
に対し出力を許可するイネーブル信号を発生するイネー
ブル信号発生回路とからなるものであることを特徴とす
る特許請求の範囲第1項記載の半導体集積回路。 (3) 上記ランチ回路本体は、そのセット端子に上記
第1制御信号発生回路の出力が、リセット端子に上記第
2制御信号発生回路の出力が接続され、上記第1制御信
号発生回路の出力が“H”の時“L”、上記第2制御信
号発生回路の出力が“H”の時“H”を出力するもので
あり、該ラッチ回路本体の出力と上記イネーブル信号発
生回路の出力とはNORゲートに入力され、該NORゲ
ートの出力が上記ランチ回路の出力となっていることを
特徴とする特許請求の範囲第2項記載の半導体集積回路
。 (4) 上記第1制御信号発生回路は、上記特定命令に
対応した信号を入力としゲートにクロックが入力される
トランスファゲートと、該トランスファゲートの出力に
接続されたインバータと、該インバータの出力を入力と
し承ゲートに上記クロックと逆相のクロックが入力され
るトランスファゲートと、該トランスファゲートの出力
及び上記人力信号の再反転信号を2人力とするAND回
路とからなり、1クロツクのパルス幅を持つワンショト
パルスを発生するものであることを特徴とする特許請求
の範囲第1項記載の半導体集積回路。
[Scope of Claims] (11) A semiconductor integrated circuit that generates a signal for controlling an external semiconductor integrated circuit having a switch means capable of reducing power consumption, wherein the external semiconductor integrated circuit generates a signal for controlling the switch means, a first control signal generation circuit that generates a first control signal for setting the switch means to a power consumption reduction mode when the above operation is executed; and a first control signal generation circuit that releases the power consumption reduction mode of the switch means when an external signal is applied. a second control signal generation circuit that generates a second control signal for controlling the semiconductor device; and a latch circuit that holds the first control signal or the second control signal and supplies it to the switch means. Integrated circuit. (2) The launch circuit includes a launch circuit body that holds and outputs the first control signal or the second control signal, and an enable signal generation circuit that generates an enable signal that allows output to the latch circuit body. The semiconductor integrated circuit according to claim 1, characterized in that: (3) the launch circuit main body has the output of the first control signal generation circuit at its set terminal and the output of the first control signal generation circuit at its reset terminal; When the output of the second control signal generation circuit is connected, the output of the first control signal generation circuit is “H”, it is “L”, and when the output of the second control signal generation circuit is “H”, it is “H”. The output of the latch circuit main body and the output of the enable signal generation circuit are input to a NOR gate, and the output of the NOR gate is the output of the launch circuit. (4) The first control signal generating circuit includes a transfer gate to which a signal corresponding to the specific command is input and a clock is input to the gate, and an output of the transfer gate. A connected inverter, a transfer gate whose input is the output of the inverter, and a clock having a phase opposite to the above clock is input to the acceptance gate, and an AND operation in which the output of the transfer gate and the re-inverted signal of the above-mentioned human-powered signal are two-man-powered. 2. The semiconductor integrated circuit according to claim 1, wherein the semiconductor integrated circuit comprises a circuit and generates a one-shot pulse having a pulse width of one clock.
JP59112489A 1984-05-30 1984-05-30 Semiconductor integrated circuit Pending JPS60254487A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59112489A JPS60254487A (en) 1984-05-30 1984-05-30 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59112489A JPS60254487A (en) 1984-05-30 1984-05-30 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS60254487A true JPS60254487A (en) 1985-12-16

Family

ID=14587921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59112489A Pending JPS60254487A (en) 1984-05-30 1984-05-30 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS60254487A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5737616A (en) * 1995-05-15 1998-04-07 Nec Corporation Power supply circuit with power saving capability

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5880721A (en) * 1981-11-09 1983-05-14 Pilot Pen Co Ltd:The Microprocessor using n-mos integrated circuit
JPS58127762A (en) * 1982-01-19 1983-07-29 チバ―ガイギ アクチエンゲゼルシヤフト Benzthiazole compound, manufacture and use for dyeing fiber, paper, leather or ink
JPS58222349A (en) * 1982-06-18 1983-12-24 Nec Corp Information processor
JPS60116019A (en) * 1983-11-07 1985-06-22 モトローラ・インコーポレーテツド Method and apparatus for selectively disabling power down instruction for data processor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5880721A (en) * 1981-11-09 1983-05-14 Pilot Pen Co Ltd:The Microprocessor using n-mos integrated circuit
JPS58127762A (en) * 1982-01-19 1983-07-29 チバ―ガイギ アクチエンゲゼルシヤフト Benzthiazole compound, manufacture and use for dyeing fiber, paper, leather or ink
JPS58222349A (en) * 1982-06-18 1983-12-24 Nec Corp Information processor
JPS60116019A (en) * 1983-11-07 1985-06-22 モトローラ・インコーポレーテツド Method and apparatus for selectively disabling power down instruction for data processor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5737616A (en) * 1995-05-15 1998-04-07 Nec Corporation Power supply circuit with power saving capability

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