JPS60246639A - Wet processing method for wafer - Google Patents

Wet processing method for wafer

Info

Publication number
JPS60246639A
JPS60246639A JP10345184A JP10345184A JPS60246639A JP S60246639 A JPS60246639 A JP S60246639A JP 10345184 A JP10345184 A JP 10345184A JP 10345184 A JP10345184 A JP 10345184A JP S60246639 A JPS60246639 A JP S60246639A
Authority
JP
Japan
Prior art keywords
wafer
wafers
cleaning
holder
washing liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10345184A
Other languages
Japanese (ja)
Inventor
Shuji Tabuchi
修司 田渕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10345184A priority Critical patent/JPS60246639A/en
Publication of JPS60246639A publication Critical patent/JPS60246639A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To enhance washing effect while reducing the volume of necessary washing liquid by a method wherein a plurality of wafers is arranged to radiate from the center of a cylindrical holder and the wafer surfaces are slightly dislocated to face though not fully the center of the holder so that they may be exposed to a washing liquid effused from the central position in the holder. CONSTITUTION:A nozzle section 15 for the effusion of a washing liquid is arranged on the central axle 13 of a holder 12 accommodating wafers 11. The nozzle section 15 should be separate from the central axle 13. The nozzle section 15 may be suspended from above or installed slidably on the central axle 13. A washing liquid, pure water for example, is effused under high pressure out of a plurality of nozzles, to strike the wafers 11. The water then flows down on the surfaces of the wafers 11, cleaning the surfaces. Effusion of a sufficiently large volume of water results in a situation wherein the water reaches the rear surfaces of the wafers 11 for further cleaning. A washing method wherein the wafer surfaces are constantly in contact with fresh, pure water is more effective than a conventional method wherein wafers are submerged in a washing liquid. In addition, the flow-down method requires less liquid.

Description

【発明の詳細な説明】 fal 発明の技術分野 本発明はウェハーのウェット処理方法に係り、特に純水
洗浄などを行なう新規な洗浄方法に関する。
DETAILED DESCRIPTION OF THE INVENTION fal Technical Field of the Invention The present invention relates to a method for wet processing of wafers, and more particularly to a novel cleaning method for performing cleaning with pure water.

(t+1 技術の背景 周知のように、ICなどの半導体装置は半導体ウェハー
上に形成され、ウェハープロセスを経て半導体素子(チ
ップ)に作成される。
(t+1) Background of the Technology As is well known, semiconductor devices such as ICs are formed on semiconductor wafers, and are made into semiconductor elements (chips) through a wafer process.

このようなウェハープロセスでは、f6液処理(ウェッ
ト処理)が繰り返えし行なわれており、11つ、溶液処
理には純水などによる洗浄が付随して、例えば、窓開け
のためのエツチング処理後には必ず純水による洗浄が行
なわれている。又、熱処理工程の前には薬品によるエツ
チング洗浄と純水洗浄とが行なわれて、この工程前の洗
浄を前処理と呼んでいるが、前処理は熱処理たりてなく
、その他の工程にも行なわれており、かようにウェハー
プロセスは洗浄が極めて多い工程である。
In such a wafer process, F6 liquid treatment (wet treatment) is repeatedly performed, and the solution treatment is accompanied by cleaning with pure water, for example, etching treatment for opening windows. Cleaning with pure water is always performed afterwards. Also, before the heat treatment process, etching cleaning with chemicals and pure water cleaning are performed, and the cleaning before this process is called pretreatment, but pretreatment is not heat treatment and is also performed in other processes. As described above, the wafer process is a process that requires a large amount of cleaning.

一方、ICなどの半導体装置は驚異的な進歩を遂げ、そ
れに伴−ってウェハープロセスも著しく量産化され、自
動化されてきたが、半導体ウェハー(以下、ウェハーと
称す)も極めて大口径化されて、そのウェハーの直径は
現用の3〜5インチから近い将来は6〜8インチになる
ことが予想されている。
On the other hand, semiconductor devices such as ICs have made amazing progress, and wafer processes have become significantly more mass-produced and automated, but semiconductor wafers (hereinafter referred to as wafers) have also become extremely large in diameter. The diameter of the wafer is expected to increase from the current 3 to 5 inches to 6 to 8 inches in the near future.

(C1従来技術と問題点 とごろで、このようなウェハーの従来からの洗浄処理方
法は、多数のウェハーをウェハーホルダーに収容し、そ
のウェハーホルダーのまま洗浄液(例えば純水)を満た
した処理容器に浸漬する方法が採られζおり、その処理
方法の断面図を第1図に示している。1はつ1バー、2
はウェハーホルタ−93は溶液を満たした処理容器で、
洗浄液を処理容器3に絶えず流出入さセておいて、処理
容器内にウェハーホルダーを浸漬し、ウェハーホルダー
の把手21を押ってL下に揺するか、又は自動機械で把
手21に1−1下動を与えて、洗浄を行なう。
(C1 Prior Art and Problems) The conventional cleaning processing method for such wafers is to store a large number of wafers in a wafer holder, and to use the wafer holder in a processing container filled with a cleaning solution (for example, pure water). A sectional view of this treatment method is shown in Figure 1.
The wafer holter 93 is a processing container filled with a solution.
The cleaning liquid is constantly flowing in and out of the processing container 3, and the wafer holder is immersed in the processing container, and the handle 21 of the wafer holder is pushed and shaken downward, or the handle 21 is 1-1 with an automatic machine. Clean by applying downward motion.

1m]、上ノチンク処理も、エノチンク液をこれと同し
処理容器に入れ、同様の処理方法が行なわれる。
1m], and in the upper notinku treatment, the enotinku solution is placed in the same treatment container and the same treatment method is carried out.

しかし、このような処理方法を行なった場合に、ウェハ
ーが大口径化してくると、処理容器3が大きくなって洗
浄液の使用量が増大し、ウェハー処理:1ストが高くな
る問題がある。洗浄液としては、純水の他に希弗酸やア
ルコールなどの薬品が使用されζいる。
However, when such a processing method is carried out, there is a problem that as the diameter of the wafer becomes larger, the processing container 3 becomes larger, the amount of cleaning liquid used increases, and the cost per stroke of wafer processing increases. In addition to pure water, chemicals such as dilute hydrofluoric acid and alcohol are used as the cleaning liquid.

また、このように容器に浸漬して洗浄する方法は洗浄液
が素早く入れ換わって、ウェハーが新鮮な洗浄液に触れ
ることが望ましい。しかし、ウェハーが大口径化して処
理容器3が大きくなると、上記の方法では洗浄液の循環
に時間が11)かつて、洗浄9ノ果が低Fする問題があ
る。これは大弯市要な問題で、ウェハーの品質面に極め
て悪い影響を及はすものである。
Further, in this method of cleaning by immersing the wafer in a container, it is desirable that the cleaning liquid is quickly replaced so that the wafer comes into contact with fresh cleaning liquid. However, when the diameter of the wafer becomes larger and the processing container 3 becomes larger, the above method has the problem that it takes a long time to circulate the cleaning liquid and that the cleaning result becomes low F. This is a major problem in Obu City, and has an extremely negative impact on the quality of wafers.

fd+ 発明の目的 本発明は上記のような問題点を解消さゼる洗浄方法、即
ち、溶液の使用量を少なくして、洗浄効果を良くする洗
浄処理方法を提案するものである。
fd+ OBJECT OF THE INVENTION The present invention proposes a cleaning method that solves the above-mentioned problems, that is, a cleaning method that reduces the amount of solution used and improves the cleaning effect.

tel 発明の構成 その目的は、円筒形状のウェハ ホルダーに複数のウェ
ハーが、該ウェハーホルダーの中心から放射状に、且つ
ウェハー面がやや中心を指向して配置されており、前記
ウェハーホルダーの中心(q置から処理液がウェハー面
に噴射されるようにしたウェハーのウェット処理方法に
よって達成される。
tel Structure of the Invention The purpose of the invention is to arrange a plurality of wafers in a cylindrical wafer holder radially from the center of the wafer holder, with the wafer surface slightly oriented toward the center, This is achieved by a wet wafer processing method in which a processing liquid is sprayed onto the wafer surface from a wafer.

(「)発明の実施例 以下9図面を参照して実施例によって詳細に説明する。(“) Examples of the invention Examples will be described in detail below with reference to nine drawings.

第2図は本発明にかかるウェット処理方法を通用゛4゛
るパ2エバーホルタ−の♀゛■■視図し7、第3し1は
その平面図−ζある。図示のように、多数のウェハー1
1が1°ノエハ−ホルダー12の中で、ボルダ−の中心
軸13から放射状Gこ、[[つ、ウェハー・面がやや中
心を向いて配置されCおり、ホルダーの周囲壁や底面は
溶液が自在に出入できるよ・)にポーラス(=8孔性)
な壁面にな・つている。又、ウエハ−ポルクー12内で
ウェハー11を保持するため、ホルダー内には1つのウ
ェハーに夕]して3つ1゛つの爪】4を設けており、第
4図にその爪14を図示している。
FIG. 2 is a perspective view 7 of a P2 Ever Holter which is used in the wet processing method according to the present invention, and FIG. 3 1 is a plan view thereof. As shown, a large number of wafers 1
The wafer 1 is placed in the holder 12 radially from the central axis 13 of the boulder, with the wafer surface facing slightly toward the center, and the surrounding wall and bottom of the holder are exposed to the solution. Porous (= 8 pores) so you can go in and out freely.
It is attached to a wall. In addition, in order to hold the wafer 11 in the wafer handle 12, three claws 4 are provided for each wafer in the holder, and the claws 14 are shown in FIG. ing.

第4図は第3図の曲線ΔΔの断面図である。FIG. 4 is a cross-sectional view of the curve ΔΔ in FIG. 3.

ここに、十記第2図ないし第4図に示すウェハーホルダ
ー12は一実施例であって、その伯の構造にしてもよい
。例えば、ウェハーを保持する爪14の代わりに、ホル
タ−の周囲内壁と中心軸の周囲とを凹凸状に形成し、そ
の凹部にウェハーを嵌め込んで保持する方法がある。又
、ウェハーホルタ−の壁面を網状にする構造でもよい。
Here, the wafer holder 12 shown in FIGS. 2 to 4 is one embodiment, and the structure shown in FIG. For example, instead of using the claws 14 for holding the wafer, there is a method in which the inner wall around the holter and around the central axis are formed into an uneven shape, and the wafer is held by fitting into the recess. Alternatively, the wall surface of the wafer holder may have a net-like structure.

次に、第5図によ“つて上記したウェハーボルダ−を用
いた洗浄処理方法の典型的な例を説明する。
Next, a typical example of a cleaning treatment method using the above-mentioned wafer boulder will be explained with reference to FIG.

第5図ta+はウェハーホルタ−の側断面図、第5し1
(11)は同図filの813で切った平面図であるが
、ウコーハ 11を収容したウェハーホルタ−12の中
心軸13の1−に、洗浄液を噴射するノズル部15を配
置し、ノズル部15は中心軸13とは分離して、I:’
−8rXからノズル8jtを吊した状態にするか、ある
いはノズル部と中心軸とがお−Uいに摺すノする状態に
しておく。
Figure 5 ta+ is a side sectional view of the wafer holter, Figure 5-1
(11) is a plan view taken at 813 in FIG. is separate from the central axis 13, I:'
The nozzle 8jt is suspended from -8rX, or the nozzle part and the central axis are slid together.

か(して、複数のノズルから洗浄液、例えば純水を高圧
でp6躬すると、ウェハ 11の)一部に向りて純水が
当たり、当たった純水がウェハ 而を流下し7て、ウェ
ハー面が洗浄される。且つ、噴射量が十分に多いと、純
水はウェハーの裏面に(書ハり込んでウェハーの両面が
洗浄される。このような洗浄方法は、ウェハー面が絶え
ず新鮮な純水と接触する方式となるから、洗浄効果が浸
漬方式よりも大きい。又、この流下式は使用液量が少な
くて済む効果がある。
When a cleaning liquid such as pure water is applied at high pressure from multiple nozzles, the pure water hits a part of the wafer 11, and the hit pure water flows down the wafer 7 and cleans the wafer. The surface is cleaned. In addition, if the amount of sprayed water is large enough, the deionized water will penetrate to the back side of the wafer, cleaning both sides of the wafer. In this cleaning method, the wafer surface is constantly in contact with fresh deionized water. Therefore, the cleaning effect is greater than that of the immersion method.Furthermore, this flow-down method has the effect of requiring less liquid.

史ζこ、この処理方法は第Fl!1talにボずように
、ウェハーホルダー12を滑り良いステージ16の−L
に@置すると、純水の噴射圧によってウェハ ホルt“
−自体を回転させることができる。そうすれば、−IN
均一な洗浄を行なうことができる。
History ζ This processing method is the first Fl! -L of the stage 16 that slides the wafer holder 12 without leaving the 1tal.
When placed in the wafer holder, the pure water injection pressure
- Can rotate itself. Then -IN
Uniform cleaning can be performed.

また、本発明に通用するウェハーボルダ−を用いると、
上記の洗浄処理方法の伯、ウェハーホルタ−12のF方
から全面に洗浄液を降り掛ける方法で洗浄することもで
きて、同様に洗浄効果は大きい。■1つ、上記の洗浄処
理方法において、7′ズル部15より乾燥ガスを噴射す
ると、洗浄後の乾燥もl1Jtiになり、また、従来の
処理容器3の中にウェハーホルダーを浸漬しζ、ガスを
バブルすれば、エツチング液の攪拌ができる。
Furthermore, when using a wafer boulder that is compatible with the present invention,
In contrast to the above-mentioned cleaning method, cleaning can also be carried out by spraying a cleaning liquid over the entire surface of the wafer holter 12 from the F side, and the cleaning effect is similarly great. (1) In the above cleaning processing method, when drying gas is injected from the 7' nozzle part 15, the drying time after cleaning becomes l1Jti. The etching solution can be stirred by bubbling.

従って、本発明にかかる洗浄処理方法を溶液処理システ
ム系全体に取り入れて自動化処理に適応させることがで
き、その場合、ウェハーの人形化にもかかわらず、処理
面積がコンパクトになるメリ ノドがある。
Therefore, the cleaning processing method according to the present invention can be incorporated into the entire solution processing system and adapted to automated processing, and in that case, there is a meli-node that allows the processing area to be compact despite the wafer being made into a doll.

(g) 発明の効果 以上の説明から明らかなように、本発明によるウェハー
処理によれば、処理溶液の使用量が減少でき、且つ洗浄
効率が良くなってウェハーの品質向上に役立てることが
できる。
(g) Effects of the Invention As is clear from the above explanation, the wafer processing according to the present invention can reduce the amount of processing solution used and improve the cleaning efficiency, which can be useful for improving the quality of wafers.

従−)で、ICなど半導体装置の−Jストダウンおよび
品質の向上に大きく寄与するものである。
This feature greatly contributes to reducing the downtime and improving the quality of semiconductor devices such as ICs.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のウェハーの溶液処理方法を示す図、第2
図は本発明にかかる溶液処理方法に通用するウェハーホ
ルダーの斜視図、第3図はその平面図、第4図は第3図
のAA lli面図、第5図fatは本発明にかかる溶
液処理方法を説明するためのウェハーホルダーの例断面
図、第5図(blは同図fatのHBで切った平面図で
ある。 図中、1.1.1はウェハー、2は従来のウェハーホル
タ−13は処理容器、 +2は本発明にかかるウェハー
ホルダー、13は中心軸、14は爪、15はノズル部、
16はステージを示している。 第1図 第2図 第3図 第4図 第50
Figure 1 is a diagram showing the conventional solution processing method for wafers;
The figure is a perspective view of a wafer holder that is applicable to the solution processing method according to the present invention, FIG. 3 is a plan view thereof, FIG. 4 is an AA lli side view of FIG. FIG. 5 is a cross-sectional view of an example of a wafer holder for explaining the method (BL is a plan view taken along HB of fat in the figure. In the figure, 1.1.1 is a wafer, and 2 is a conventional wafer holder. 13 is a processing container, +2 is a wafer holder according to the present invention, 13 is a central axis, 14 is a claw, 15 is a nozzle part,
16 indicates a stage. Figure 1 Figure 2 Figure 3 Figure 4 Figure 50

Claims (1)

【特許請求の範囲】[Claims] 円筒形状のウェハーホルダーに複数のウェハーが、該ウ
ェハーホルダーの中心から放射状に、且つウェハー面が
やや中心を指向して配置されており、前記ウェハーホル
ダーの中心位置から処理液がウェハー面に噴射されるよ
うにしたことを特徴とするウェハーのウェット処理方法
A plurality of wafers are arranged in a cylindrical wafer holder radially from the center of the wafer holder, with the wafer surface slightly oriented toward the center, and a processing liquid is sprayed onto the wafer surface from the center of the wafer holder. A wafer wet processing method characterized in that:
JP10345184A 1984-05-21 1984-05-21 Wet processing method for wafer Pending JPS60246639A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10345184A JPS60246639A (en) 1984-05-21 1984-05-21 Wet processing method for wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10345184A JPS60246639A (en) 1984-05-21 1984-05-21 Wet processing method for wafer

Publications (1)

Publication Number Publication Date
JPS60246639A true JPS60246639A (en) 1985-12-06

Family

ID=14354386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10345184A Pending JPS60246639A (en) 1984-05-21 1984-05-21 Wet processing method for wafer

Country Status (1)

Country Link
JP (1) JPS60246639A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5137461A (en) * 1974-09-25 1976-03-29 Mitsubishi Heavy Ind Ltd FUOOKURI FUTOTORATSUKUNO HINJIDO FUOOKUSOCHI
JPS5629331A (en) * 1979-08-18 1981-03-24 Mitsubishi Electric Corp Water rinsing device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5137461A (en) * 1974-09-25 1976-03-29 Mitsubishi Heavy Ind Ltd FUOOKURI FUTOTORATSUKUNO HINJIDO FUOOKUSOCHI
JPS5629331A (en) * 1979-08-18 1981-03-24 Mitsubishi Electric Corp Water rinsing device

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