JPS60246622A - 半導体結晶層の製造方法 - Google Patents
半導体結晶層の製造方法Info
- Publication number
- JPS60246622A JPS60246622A JP59101775A JP10177584A JPS60246622A JP S60246622 A JPS60246622 A JP S60246622A JP 59101775 A JP59101775 A JP 59101775A JP 10177584 A JP10177584 A JP 10177584A JP S60246622 A JPS60246622 A JP S60246622A
- Authority
- JP
- Japan
- Prior art keywords
- opening
- layer
- single crystal
- semiconductor
- scanning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 claims abstract description 29
- 238000000137 annealing Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052681 coesite Inorganic materials 0.000 abstract description 8
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 8
- 239000000377 silicon dioxide Substances 0.000 abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 8
- 229910052682 stishovite Inorganic materials 0.000 abstract description 8
- 229910052905 tridymite Inorganic materials 0.000 abstract description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 18
- 238000010894 electron beam technology Methods 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 8
- 230000008025 crystallization Effects 0.000 description 8
- 230000035882 stress Effects 0.000 description 6
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000004857 zone melting Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59101775A JPS60246622A (ja) | 1984-05-22 | 1984-05-22 | 半導体結晶層の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59101775A JPS60246622A (ja) | 1984-05-22 | 1984-05-22 | 半導体結晶層の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60246622A true JPS60246622A (ja) | 1985-12-06 |
| JPH0149003B2 JPH0149003B2 (enrdf_load_stackoverflow) | 1989-10-23 |
Family
ID=14309584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59101775A Granted JPS60246622A (ja) | 1984-05-22 | 1984-05-22 | 半導体結晶層の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60246622A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63169023A (ja) * | 1987-01-07 | 1988-07-13 | Agency Of Ind Science & Technol | Ｓｏｉ結晶成長法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5781583A (en) * | 1980-11-11 | 1982-05-21 | Nichibei Buraindo Kogyo Kk | Lifting and inclining apparatus of blind |
| JPS5996383A (ja) * | 1982-11-19 | 1984-06-02 | 立川ブラインド工業株式会社 | ヘツドボツクス昇降型ブラインドの開閉駆動装置 |
-
1984
- 1984-05-22 JP JP59101775A patent/JPS60246622A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5781583A (en) * | 1980-11-11 | 1982-05-21 | Nichibei Buraindo Kogyo Kk | Lifting and inclining apparatus of blind |
| JPS5996383A (ja) * | 1982-11-19 | 1984-06-02 | 立川ブラインド工業株式会社 | ヘツドボツクス昇降型ブラインドの開閉駆動装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63169023A (ja) * | 1987-01-07 | 1988-07-13 | Agency Of Ind Science & Technol | Ｓｏｉ結晶成長法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0149003B2 (enrdf_load_stackoverflow) | 1989-10-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5371381A (en) | Process for producing single crystal semiconductor layer and semiconductor device produced by said process | |
| JPS60246622A (ja) | 半導体結晶層の製造方法 | |
| JPH0236051B2 (enrdf_load_stackoverflow) | ||
| JPS59184517A (ja) | 積層型半導体装置の製造方法 | |
| JPS6147627A (ja) | 半導体装置の製造方法 | |
| JPH0236052B2 (enrdf_load_stackoverflow) | ||
| JPH0334847B2 (enrdf_load_stackoverflow) | ||
| JPS61116821A (ja) | 単結晶薄膜の形成方法 | |
| JPS59194422A (ja) | 半導体層の単結晶化方法 | |
| JPH04214615A (ja) | 半導体デバイスの製造方法 | |
| JP2981777B2 (ja) | 半導体基板の製造方法 | |
| JPH01123410A (ja) | 化合物半導体基板及びその製造方法 | |
| JPS60123019A (ja) | 半導体装置の製造方法 | |
| JPH0560668B2 (enrdf_load_stackoverflow) | ||
| JPS58180019A (ja) | 半導体基体およびその製造方法 | |
| JPS60164316A (ja) | 半導体薄膜の形成方法 | |
| JPS63174308A (ja) | 半導体薄膜結晶層の製造方法 | |
| JPH04299517A (ja) | シリコン再結晶化半導体装置およびその製造方法 | |
| JPS6336515A (ja) | 半導体単結晶薄膜の製造方法 | |
| JPH0779078B2 (ja) | 半導体層の単結晶化方法 | |
| JPH0775223B2 (ja) | 半導体単結晶層の製造方法 | |
| JPH0758685B2 (ja) | Ｓｏｉ結晶成長法 | |
| JPH0519976B2 (enrdf_load_stackoverflow) | ||
| JPS6015916A (ja) | 単結晶薄膜の製造方法 | |
| JPS6189621A (ja) | 半導体装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |