JPS60230117A - Storage capacity incorporated type liquid crystal display device - Google Patents

Storage capacity incorporated type liquid crystal display device

Info

Publication number
JPS60230117A
JPS60230117A JP59085771A JP8577184A JPS60230117A JP S60230117 A JPS60230117 A JP S60230117A JP 59085771 A JP59085771 A JP 59085771A JP 8577184 A JP8577184 A JP 8577184A JP S60230117 A JPS60230117 A JP S60230117A
Authority
JP
Japan
Prior art keywords
storage capacity
liquid crystal
crystal display
conductive film
type liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59085771A
Other languages
Japanese (ja)
Other versions
JPH0646277B2 (en
Inventor
Masahiko Oota
Original Assignee
Seiko Instr & Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instr & Electronics Ltd filed Critical Seiko Instr & Electronics Ltd
Priority to JP59085771A priority Critical patent/JPH0646277B2/en
Publication of JPS60230117A publication Critical patent/JPS60230117A/en
Publication of JPH0646277B2 publication Critical patent/JPH0646277B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136213Storage capacitors associated with the pixel electrode

Abstract

PURPOSE:To obtain the liquid crystal display device which has a relatively high aperture rate by forming storage capacity in such a multilayered structure that a minus electrode side is sandwiched from both sides. CONSTITUTION:A transparent conductive film 4 for a picture element electrode is deposited selectively on an insulating substrate 1, an insulating film 3 with thickness corresponding to the capacity value of the storage capacity is deposited over the entire surface, and a counter electrode 9 extending from the gate line of the front stage is formed thereupon to form the storage capacity. Then, when a transistor TR element part 6 is formed successively, a conductive film 10 for connecting the conductive film 4 to the source terminal of the TR element is formed so as to cover the counter electrode 9 extending from the gate line of the front stage across a gate insulating film 5. Consequently, larger storage capacity is formed within the same area. Thus, the aperture rate of the picture element part is increased greatly and the bright, excellent liquid crystal display deivce is obtained.
JP59085771A 1984-04-27 1984-04-27 Liquid crystal display with built-in storage capacity Expired - Lifetime JPH0646277B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59085771A JPH0646277B2 (en) 1984-04-27 1984-04-27 Liquid crystal display with built-in storage capacity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59085771A JPH0646277B2 (en) 1984-04-27 1984-04-27 Liquid crystal display with built-in storage capacity

Publications (2)

Publication Number Publication Date
JPS60230117A true JPS60230117A (en) 1985-11-15
JPH0646277B2 JPH0646277B2 (en) 1994-06-15

Family

ID=13868134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59085771A Expired - Lifetime JPH0646277B2 (en) 1984-04-27 1984-04-27 Liquid crystal display with built-in storage capacity

Country Status (1)

Country Link
JP (1) JPH0646277B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0464579A2 (en) * 1990-06-25 1992-01-08 Nec Corporation Thin film field effect transistor array for use in active matrix liquid crystal display
US5162901A (en) * 1989-05-26 1992-11-10 Sharp Kabushiki Kaisha Active-matrix display device with added capacitance electrode wire and secondary wire connected thereto
US5528396A (en) * 1987-06-10 1996-06-18 Hitachi, Ltd. TFT active matrix liquid crystal display devices with a holding capacitance between the pixel electrode and a scanning signal line
US5610738A (en) * 1990-10-17 1997-03-11 Hitachi, Ltd. Method for making LCD device in which gate insulator of TFT is formed after the pixel electrode but before the video signal line
KR20020057022A (en) * 2000-12-30 2002-07-11 주식회사 현대 디스플레이 테크놀로지 Pixel structure of liquid crystal display device
US6542212B2 (en) * 1998-06-23 2003-04-01 Fujitsu Limited Liquid crystal display apparatus with comb-shaped electrodes

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS595229A (en) * 1982-07-01 1984-01-12 Asahi Glass Co Ltd Image display device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS595229A (en) * 1982-07-01 1984-01-12 Asahi Glass Co Ltd Image display device

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5838399A (en) * 1987-06-10 1998-11-17 Hitachi, Ltd. TFT active matrix liquid crystal display devices with two layer gate lines, the first being the same level as gate electrodes.
US7196762B2 (en) 1987-06-10 2007-03-27 Hitachi, Ltd. TFT active matrix liquid crystal display devices
US6992744B2 (en) 1987-06-10 2006-01-31 Hitachi, Ltd. TFT active matrix liquid crystal display devices
US6839098B2 (en) 1987-06-10 2005-01-04 Hitachi, Ltd. TFT active matrix liquid crystal display devices
US5528396A (en) * 1987-06-10 1996-06-18 Hitachi, Ltd. TFT active matrix liquid crystal display devices with a holding capacitance between the pixel electrode and a scanning signal line
US5532850A (en) * 1987-06-10 1996-07-02 Hitachi, Ltd. TFT active matrix liquid crystal display with gate lines having two layers, the gate electrode connected to the wider layer only
US6384879B2 (en) 1987-06-10 2002-05-07 Hitachi, Ltd. Liquid crystal display device including thin film transistors having gate electrodes completely covering the semiconductor
US6184963B1 (en) 1987-06-10 2001-02-06 Hitachi, Ltd. TFT active matrix LCD devices employing two superposed conductive films having different dimensions for the scanning signal lines
US5708484A (en) * 1987-06-10 1998-01-13 Hitachi, Ltd. TFT active matrix liquid crystal display devices with two layer gate lines, the first being the same level and material as gate electrodes
US7450210B2 (en) 1987-06-10 2008-11-11 Hitachi, Ltd. TFT active matrix liquid crystal display devices
US5162901A (en) * 1989-05-26 1992-11-10 Sharp Kabushiki Kaisha Active-matrix display device with added capacitance electrode wire and secondary wire connected thereto
EP0464579A2 (en) * 1990-06-25 1992-01-08 Nec Corporation Thin film field effect transistor array for use in active matrix liquid crystal display
EP0668528A1 (en) * 1990-06-25 1995-08-23 NEC Corporation Thin film field effect transistor array for use in active matrix liquid crystal display
US5182661A (en) * 1990-06-25 1993-01-26 Nec Corporation Thin film field effect transistor array for use in active matrix liquid crystal display
US5671027A (en) * 1990-10-17 1997-09-23 Hitachi, Ltd. LCD device with TFTs in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films and before the deposition of the silicon gate insulator
US5610738A (en) * 1990-10-17 1997-03-11 Hitachi, Ltd. Method for making LCD device in which gate insulator of TFT is formed after the pixel electrode but before the video signal line
US6542212B2 (en) * 1998-06-23 2003-04-01 Fujitsu Limited Liquid crystal display apparatus with comb-shaped electrodes
KR20020057022A (en) * 2000-12-30 2002-07-11 주식회사 현대 디스플레이 테크놀로지 Pixel structure of liquid crystal display device

Also Published As

Publication number Publication date
JPH0646277B2 (en) 1994-06-15

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term