JPS60216553A - フォトエッチング法 - Google Patents

フォトエッチング法

Info

Publication number
JPS60216553A
JPS60216553A JP59073276A JP7327684A JPS60216553A JP S60216553 A JPS60216553 A JP S60216553A JP 59073276 A JP59073276 A JP 59073276A JP 7327684 A JP7327684 A JP 7327684A JP S60216553 A JPS60216553 A JP S60216553A
Authority
JP
Japan
Prior art keywords
resist
substrate
light
sio2
photosensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59073276A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0325011B2 (enExample
Inventor
Kazuo Matsuzaki
松崎　一夫
Akinori Shimizu
了典 清水
Misao Saga
佐賀　操
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Corporate Research and Development Ltd
Priority to JP59073276A priority Critical patent/JPS60216553A/ja
Publication of JPS60216553A publication Critical patent/JPS60216553A/ja
Publication of JPH0325011B2 publication Critical patent/JPH0325011B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP59073276A 1984-04-12 1984-04-12 フォトエッチング法 Granted JPS60216553A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59073276A JPS60216553A (ja) 1984-04-12 1984-04-12 フォトエッチング法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59073276A JPS60216553A (ja) 1984-04-12 1984-04-12 フォトエッチング法

Publications (2)

Publication Number Publication Date
JPS60216553A true JPS60216553A (ja) 1985-10-30
JPH0325011B2 JPH0325011B2 (enExample) 1991-04-04

Family

ID=13513463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59073276A Granted JPS60216553A (ja) 1984-04-12 1984-04-12 フォトエッチング法

Country Status (1)

Country Link
JP (1) JPS60216553A (enExample)

Also Published As

Publication number Publication date
JPH0325011B2 (enExample) 1991-04-04

Similar Documents

Publication Publication Date Title
KR100298609B1 (ko) 위상쉬프트층을갖는포토마스크의제조방법
JPH05127369A (ja) レジスト材料
GB2135793A (en) Bilevel ultraviolet resist system for patterning substrates of high reflectivity
JP3416554B2 (ja) マスク構造体の製造方法
JPS60216553A (ja) フォトエッチング法
JP3061790B1 (ja) マスク製造方法及びパタ―ン形成方法
JP2001217184A (ja) 半導体装置の製造方法
JP3475309B2 (ja) 位相シフトフォトマスクの製造方法
US20080020324A1 (en) Immersion lithography defect reduction with top coater removal
JP2004226893A (ja) ハーフトーン位相シフトマスク及びそれを用いたレジスト露光方法並びにレジスト露光装置
JP2783582B2 (ja) フォトマスク
JPH0651489A (ja) ハーフトーン位相シフトフォトマスクの製造方法
JP2768139B2 (ja) 半導体装置の製造方法
JP3663551B2 (ja) レジスト・パターンの形成方法
JPH08293454A (ja) レジストパターンの形成方法
JPH10333318A (ja) 位相シフトフォトマスク及びその製造方法
KR0137618B1 (ko) 포토레지스트 패턴 형성방법
JPH05232678A (ja) 位相シフトフォトマスクの製造方法
JPH04153653A (ja) 位相シフト層を有するフォトマスクの製造方法
JPS63237527A (ja) レジスト剥離方法
JPS5953842A (ja) 写真処理法
JPH0651490A (ja) 位相シフト層を有するフォトマスクの製造方法
JP2004228266A (ja) 露光用アパーチャ及びその製造方法、露光装置並びに半導体装置の製造方法
JPS5950053B2 (ja) 写真蝕刻方法
JPS6116521A (ja) レジスト膜除去方法