JPS6021529A - ほう素膜形成方法 - Google Patents
ほう素膜形成方法Info
- Publication number
- JPS6021529A JPS6021529A JP58129211A JP12921183A JPS6021529A JP S6021529 A JPS6021529 A JP S6021529A JP 58129211 A JP58129211 A JP 58129211A JP 12921183 A JP12921183 A JP 12921183A JP S6021529 A JPS6021529 A JP S6021529A
- Authority
- JP
- Japan
- Prior art keywords
- boron
- film
- target
- diborane
- boron film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58129211A JPS6021529A (ja) | 1983-07-15 | 1983-07-15 | ほう素膜形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58129211A JPS6021529A (ja) | 1983-07-15 | 1983-07-15 | ほう素膜形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6021529A true JPS6021529A (ja) | 1985-02-02 |
JPH0228892B2 JPH0228892B2 (enrdf_load_stackoverflow) | 1990-06-27 |
Family
ID=15003877
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58129211A Granted JPS6021529A (ja) | 1983-07-15 | 1983-07-15 | ほう素膜形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6021529A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6358823A (ja) * | 1986-08-29 | 1988-03-14 | Toshiba Corp | 半導体装置の製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55125634A (en) * | 1979-03-23 | 1980-09-27 | Nissan Motor Co Ltd | Production of silicon dioxide film |
-
1983
- 1983-07-15 JP JP58129211A patent/JPS6021529A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55125634A (en) * | 1979-03-23 | 1980-09-27 | Nissan Motor Co Ltd | Production of silicon dioxide film |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6358823A (ja) * | 1986-08-29 | 1988-03-14 | Toshiba Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0228892B2 (enrdf_load_stackoverflow) | 1990-06-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI577820B (zh) | Means for improving MOCVD reaction method and improvement method thereof | |
JP2006261217A (ja) | 薄膜形成方法 | |
JPS61295377A (ja) | 薄膜形成方法 | |
JPS582022A (ja) | 薄膜形成方法 | |
US4292343A (en) | Method of manufacturing semiconductor bodies composed of amorphous silicon | |
WO2019114060A1 (zh) | 电极板及其表面处理方法 | |
JPH01306565A (ja) | 堆積膜形成方法 | |
JP4150789B2 (ja) | 非晶質窒化炭素膜及びその製造方法 | |
JP4134315B2 (ja) | 炭素薄膜及びその製造方法 | |
KR20190113619A (ko) | 붕소계 막의 성막 방법 및 성막 장치 | |
JPS58209111A (ja) | プラズマ発生装置 | |
JPS6021529A (ja) | ほう素膜形成方法 | |
FR2557149A1 (fr) | Procede et dispositif pour le depot, sur un support, d'une couche mince d'un materiau a partir d'un plasma reactif | |
JPH03229886A (ja) | 大気圧グロープラズマエッチング方法 | |
CN107622949B (zh) | 一种基于等离子体浸没注入技术制备黑磷二维材料的方法 | |
JPS61136678A (ja) | 高硬度炭素膜形成方法 | |
JPH02115379A (ja) | 薄膜形成装置 | |
US20110014394A1 (en) | film depositing apparatus and method | |
JP2000178749A (ja) | プラズマcvd装置 | |
JP2646582B2 (ja) | プラズマcvd装置 | |
JP3276415B2 (ja) | セラミックス皮膜の形成方法及び成形装置 | |
JPH0247252A (ja) | 複合材料膜の製造方法 | |
JPH06310430A (ja) | 水素化非晶質カーボン膜の製造装置ならびに製造方法 | |
JP2890032B2 (ja) | シリコン薄膜の成膜方法 | |
JPS5952526A (ja) | 金属酸化膜のスパツタリング方法 |