JPS6020655A - 光検出回路 - Google Patents
光検出回路Info
- Publication number
- JPS6020655A JPS6020655A JP58129050A JP12905083A JPS6020655A JP S6020655 A JPS6020655 A JP S6020655A JP 58129050 A JP58129050 A JP 58129050A JP 12905083 A JP12905083 A JP 12905083A JP S6020655 A JPS6020655 A JP S6020655A
- Authority
- JP
- Japan
- Prior art keywords
- reverse bias
- photodiode
- voltage
- circuit
- bias voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title description 26
- 238000001514 detection method Methods 0.000 claims description 7
- 229920006395 saturated elastomer Polymers 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000005259 measurement Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910005933 Ge—P Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- XVOCEVMHNRHJMX-UHFFFAOYSA-N ethyl-hydroxy-oxogermane Chemical compound CC[Ge](O)=O XVOCEVMHNRHJMX-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
- H04B10/691—Arrangements for optimizing the photodetector in the receiver
- H04B10/6911—Photodiode bias control, e.g. for compensating temperature variations
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Light Receiving Elements (AREA)
- Optical Communication System (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58129050A JPS6020655A (ja) | 1983-07-15 | 1983-07-15 | 光検出回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58129050A JPS6020655A (ja) | 1983-07-15 | 1983-07-15 | 光検出回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6020655A true JPS6020655A (ja) | 1985-02-01 |
| JPH0257740B2 JPH0257740B2 (enrdf_load_stackoverflow) | 1990-12-05 |
Family
ID=14999843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58129050A Granted JPS6020655A (ja) | 1983-07-15 | 1983-07-15 | 光検出回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6020655A (enrdf_load_stackoverflow) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6181677A (ja) * | 1984-09-28 | 1986-04-25 | Fujitsu Ltd | 受光装置 |
| EP1128170A1 (en) * | 2000-02-25 | 2001-08-29 | Telefonaktiebolaget L M Ericsson (Publ) | Photodiode bias circuit |
| WO2007125977A1 (en) * | 2006-04-27 | 2007-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic appliance using the same |
| US7705283B2 (en) | 2005-05-23 | 2010-04-27 | Semiconductor Energy Laboratory Co., Ltd | Photoelectric conversion device and manufacturing method thereof |
| US7791012B2 (en) | 2006-09-29 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes |
| US8514165B2 (en) | 2006-12-28 | 2013-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| EP3715803A4 (en) * | 2017-11-24 | 2021-08-04 | Hamamatsu Photonics K.K. | OPTICAL DETECTION CIRCUIT |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0622080U (ja) * | 1992-07-10 | 1994-03-22 | 株式会社千代田製作所 | スポイラ用ランプアセンブリ |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56107654A (en) * | 1980-01-31 | 1981-08-26 | Nec Corp | Light receiving circuit |
| JPS5854744A (ja) * | 1981-09-28 | 1983-03-31 | Hitachi Ltd | 光線受信回路 |
-
1983
- 1983-07-15 JP JP58129050A patent/JPS6020655A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56107654A (en) * | 1980-01-31 | 1981-08-26 | Nec Corp | Light receiving circuit |
| JPS5854744A (ja) * | 1981-09-28 | 1983-03-31 | Hitachi Ltd | 光線受信回路 |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6181677A (ja) * | 1984-09-28 | 1986-04-25 | Fujitsu Ltd | 受光装置 |
| EP1128170A1 (en) * | 2000-02-25 | 2001-08-29 | Telefonaktiebolaget L M Ericsson (Publ) | Photodiode bias circuit |
| US7705283B2 (en) | 2005-05-23 | 2010-04-27 | Semiconductor Energy Laboratory Co., Ltd | Photoelectric conversion device and manufacturing method thereof |
| US8263926B2 (en) | 2005-05-23 | 2012-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
| WO2007125977A1 (en) * | 2006-04-27 | 2007-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic appliance using the same |
| US7531784B2 (en) | 2006-04-27 | 2009-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic appliance using the same |
| US7791012B2 (en) | 2006-09-29 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes |
| US8514165B2 (en) | 2006-12-28 | 2013-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| EP3715803A4 (en) * | 2017-11-24 | 2021-08-04 | Hamamatsu Photonics K.K. | OPTICAL DETECTION CIRCUIT |
| US11118970B2 (en) | 2017-11-24 | 2021-09-14 | Hamamatsu Photonics K.K. | Optical detection circuit comprising an optical detector to generate voltage between an anode and a cathode due to photoelectromotive force generated in accordance with incident light quantity |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0257740B2 (enrdf_load_stackoverflow) | 1990-12-05 |
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