JPS6020655A - 光検出回路 - Google Patents

光検出回路

Info

Publication number
JPS6020655A
JPS6020655A JP58129050A JP12905083A JPS6020655A JP S6020655 A JPS6020655 A JP S6020655A JP 58129050 A JP58129050 A JP 58129050A JP 12905083 A JP12905083 A JP 12905083A JP S6020655 A JPS6020655 A JP S6020655A
Authority
JP
Japan
Prior art keywords
reverse bias
photodiode
voltage
circuit
bias voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58129050A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0257740B2 (OSRAM
Inventor
Takashi Matsuno
敬司 松野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Iwatsu Electric Co Ltd
Iwasaki Tsushinki KK
Original Assignee
Iwatsu Electric Co Ltd
Iwasaki Tsushinki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iwatsu Electric Co Ltd, Iwasaki Tsushinki KK filed Critical Iwatsu Electric Co Ltd
Priority to JP58129050A priority Critical patent/JPS6020655A/ja
Publication of JPS6020655A publication Critical patent/JPS6020655A/ja
Publication of JPH0257740B2 publication Critical patent/JPH0257740B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
    • H04B10/66—Non-coherent receivers, e.g. using direct detection
    • H04B10/69—Electrical arrangements in the receiver
    • H04B10/691—Arrangements for optimizing the photodetector in the receiver
    • H04B10/6911—Photodiode bias control, e.g. for compensating temperature variations

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)
  • Optical Communication System (AREA)
JP58129050A 1983-07-15 1983-07-15 光検出回路 Granted JPS6020655A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58129050A JPS6020655A (ja) 1983-07-15 1983-07-15 光検出回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58129050A JPS6020655A (ja) 1983-07-15 1983-07-15 光検出回路

Publications (2)

Publication Number Publication Date
JPS6020655A true JPS6020655A (ja) 1985-02-01
JPH0257740B2 JPH0257740B2 (OSRAM) 1990-12-05

Family

ID=14999843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58129050A Granted JPS6020655A (ja) 1983-07-15 1983-07-15 光検出回路

Country Status (1)

Country Link
JP (1) JPS6020655A (OSRAM)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6181677A (ja) * 1984-09-28 1986-04-25 Fujitsu Ltd 受光装置
EP1128170A1 (en) * 2000-02-25 2001-08-29 Telefonaktiebolaget L M Ericsson (Publ) Photodiode bias circuit
WO2007125977A1 (en) * 2006-04-27 2007-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic appliance using the same
US7705283B2 (en) 2005-05-23 2010-04-27 Semiconductor Energy Laboratory Co., Ltd Photoelectric conversion device and manufacturing method thereof
US7791012B2 (en) 2006-09-29 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes
US8514165B2 (en) 2006-12-28 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP3715803A4 (en) * 2017-11-24 2021-08-04 Hamamatsu Photonics K.K. OPTICAL DETECTION CIRCUIT

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0622080U (ja) * 1992-07-10 1994-03-22 株式会社千代田製作所 スポイラ用ランプアセンブリ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56107654A (en) * 1980-01-31 1981-08-26 Nec Corp Light receiving circuit
JPS5854744A (ja) * 1981-09-28 1983-03-31 Hitachi Ltd 光線受信回路

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56107654A (en) * 1980-01-31 1981-08-26 Nec Corp Light receiving circuit
JPS5854744A (ja) * 1981-09-28 1983-03-31 Hitachi Ltd 光線受信回路

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6181677A (ja) * 1984-09-28 1986-04-25 Fujitsu Ltd 受光装置
EP1128170A1 (en) * 2000-02-25 2001-08-29 Telefonaktiebolaget L M Ericsson (Publ) Photodiode bias circuit
US7705283B2 (en) 2005-05-23 2010-04-27 Semiconductor Energy Laboratory Co., Ltd Photoelectric conversion device and manufacturing method thereof
US8263926B2 (en) 2005-05-23 2012-09-11 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
WO2007125977A1 (en) * 2006-04-27 2007-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic appliance using the same
US7531784B2 (en) 2006-04-27 2009-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic appliance using the same
US7791012B2 (en) 2006-09-29 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes
US8514165B2 (en) 2006-12-28 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP3715803A4 (en) * 2017-11-24 2021-08-04 Hamamatsu Photonics K.K. OPTICAL DETECTION CIRCUIT
US11118970B2 (en) 2017-11-24 2021-09-14 Hamamatsu Photonics K.K. Optical detection circuit comprising an optical detector to generate voltage between an anode and a cathode due to photoelectromotive force generated in accordance with incident light quantity

Also Published As

Publication number Publication date
JPH0257740B2 (OSRAM) 1990-12-05

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