JPS60206027A - プラズマ処理装置 - Google Patents

プラズマ処理装置

Info

Publication number
JPS60206027A
JPS60206027A JP6061784A JP6061784A JPS60206027A JP S60206027 A JPS60206027 A JP S60206027A JP 6061784 A JP6061784 A JP 6061784A JP 6061784 A JP6061784 A JP 6061784A JP S60206027 A JPS60206027 A JP S60206027A
Authority
JP
Japan
Prior art keywords
gas
wafer
plasma processing
processed
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6061784A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0586654B2 (enrdf_load_stackoverflow
Inventor
Ryoji Fukuyama
良次 福山
Makoto Nawata
誠 縄田
Junichi Kobayashi
淳一 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6061784A priority Critical patent/JPS60206027A/ja
Publication of JPS60206027A publication Critical patent/JPS60206027A/ja
Publication of JPH0586654B2 publication Critical patent/JPH0586654B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP6061784A 1984-03-30 1984-03-30 プラズマ処理装置 Granted JPS60206027A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6061784A JPS60206027A (ja) 1984-03-30 1984-03-30 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6061784A JPS60206027A (ja) 1984-03-30 1984-03-30 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS60206027A true JPS60206027A (ja) 1985-10-17
JPH0586654B2 JPH0586654B2 (enrdf_load_stackoverflow) 1993-12-13

Family

ID=13147414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6061784A Granted JPS60206027A (ja) 1984-03-30 1984-03-30 プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS60206027A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62157138U (enrdf_load_stackoverflow) * 1986-03-27 1987-10-06
JPH05190506A (ja) * 1992-01-17 1993-07-30 Toshiba Corp ドライエッチング方法およびその装置
JP2016189374A (ja) * 2015-03-30 2016-11-04 Ｓｐｐテクノロジーズ株式会社 半導体素子の製造方法及びその製造に用いられるプラズマエッチング装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52123173A (en) * 1976-04-08 1977-10-17 Fuji Photo Film Co Ltd Sputter etching method
JPS57102022A (en) * 1980-12-17 1982-06-24 Nec Corp Reactive sputter etching equipment
JPS5890731A (ja) * 1981-11-25 1983-05-30 Sony Corp 感光性高分子膜形成用プラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52123173A (en) * 1976-04-08 1977-10-17 Fuji Photo Film Co Ltd Sputter etching method
JPS57102022A (en) * 1980-12-17 1982-06-24 Nec Corp Reactive sputter etching equipment
JPS5890731A (ja) * 1981-11-25 1983-05-30 Sony Corp 感光性高分子膜形成用プラズマ処理装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62157138U (enrdf_load_stackoverflow) * 1986-03-27 1987-10-06
JPH05190506A (ja) * 1992-01-17 1993-07-30 Toshiba Corp ドライエッチング方法およびその装置
US5837093A (en) * 1992-01-17 1998-11-17 Kabushiki Kaisha Toshiba Apparatus for performing plain etching treatment
JP2016189374A (ja) * 2015-03-30 2016-11-04 Ｓｐｐテクノロジーズ株式会社 半導体素子の製造方法及びその製造に用いられるプラズマエッチング装置

Also Published As

Publication number Publication date
JPH0586654B2 (enrdf_load_stackoverflow) 1993-12-13

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