JPS60189221A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS60189221A JPS60189221A JP4508184A JP4508184A JPS60189221A JP S60189221 A JPS60189221 A JP S60189221A JP 4508184 A JP4508184 A JP 4508184A JP 4508184 A JP4508184 A JP 4508184A JP S60189221 A JPS60189221 A JP S60189221A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- etching
- single crystal
- plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000010409 thin film Substances 0.000 claims abstract description 32
- 239000010408 film Substances 0.000 claims abstract description 27
- 238000005530 etching Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000010894 electron beam technology Methods 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 15
- 229920005591 polysilicon Polymers 0.000 abstract description 15
- 239000013078 crystal Substances 0.000 abstract description 7
- 238000002844 melting Methods 0.000 abstract description 6
- 230000008018 melting Effects 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 5
- 229910052721 tungsten Inorganic materials 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 description 10
- 238000000605 extraction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4508184A JPS60189221A (ja) | 1984-03-08 | 1984-03-08 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4508184A JPS60189221A (ja) | 1984-03-08 | 1984-03-08 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60189221A true JPS60189221A (ja) | 1985-09-26 |
| JPH0574218B2 JPH0574218B2 (enrdf_load_stackoverflow) | 1993-10-18 |
Family
ID=12709375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4508184A Granted JPS60189221A (ja) | 1984-03-08 | 1984-03-08 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60189221A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5420074A (en) * | 1990-07-05 | 1995-05-30 | Kabushiki Kaisha Toshiba | Method for burying low resistance material in a contact hole |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS594015A (ja) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JPS6024013A (ja) * | 1983-07-20 | 1985-02-06 | Toshiba Corp | 半導体装置の製造方法 |
-
1984
- 1984-03-08 JP JP4508184A patent/JPS60189221A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS594015A (ja) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JPS6024013A (ja) * | 1983-07-20 | 1985-02-06 | Toshiba Corp | 半導体装置の製造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5420074A (en) * | 1990-07-05 | 1995-05-30 | Kabushiki Kaisha Toshiba | Method for burying low resistance material in a contact hole |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0574218B2 (enrdf_load_stackoverflow) | 1993-10-18 |
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