JPS60185297A - 不揮発性ランダムアクセスメモリ装置 - Google Patents

不揮発性ランダムアクセスメモリ装置

Info

Publication number
JPS60185297A
JPS60185297A JP59038830A JP3883084A JPS60185297A JP S60185297 A JPS60185297 A JP S60185297A JP 59038830 A JP59038830 A JP 59038830A JP 3883084 A JP3883084 A JP 3883084A JP S60185297 A JPS60185297 A JP S60185297A
Authority
JP
Japan
Prior art keywords
memory cell
capacitor
transistor
node
volatile memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59038830A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0379800B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Hideki Arakawa
秀貴 荒川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59038830A priority Critical patent/JPS60185297A/ja
Priority to US06/659,191 priority patent/US4630238A/en
Priority to DE3486418T priority patent/DE3486418T2/de
Priority to EP84306978A priority patent/EP0147019B1/en
Priority to DE8484306978T priority patent/DE3486094T2/de
Priority to EP91121355A priority patent/EP0481532B1/en
Publication of JPS60185297A publication Critical patent/JPS60185297A/ja
Publication of JPH0379800B2 publication Critical patent/JPH0379800B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down

Landscapes

  • Static Random-Access Memory (AREA)
JP59038830A 1983-10-14 1984-03-02 不揮発性ランダムアクセスメモリ装置 Granted JPS60185297A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP59038830A JPS60185297A (ja) 1984-03-02 1984-03-02 不揮発性ランダムアクセスメモリ装置
US06/659,191 US4630238A (en) 1983-10-14 1984-10-09 Semiconductor memory device
DE3486418T DE3486418T2 (de) 1983-10-14 1984-10-12 Halbleiterspeicheranordnung
EP84306978A EP0147019B1 (en) 1983-10-14 1984-10-12 Semiconductor memory device
DE8484306978T DE3486094T2 (de) 1983-10-14 1984-10-12 Halbleiterspeicheranordnung.
EP91121355A EP0481532B1 (en) 1983-10-14 1984-10-12 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59038830A JPS60185297A (ja) 1984-03-02 1984-03-02 不揮発性ランダムアクセスメモリ装置

Publications (2)

Publication Number Publication Date
JPS60185297A true JPS60185297A (ja) 1985-09-20
JPH0379800B2 JPH0379800B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-12-19

Family

ID=12536142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59038830A Granted JPS60185297A (ja) 1983-10-14 1984-03-02 不揮発性ランダムアクセスメモリ装置

Country Status (1)

Country Link
JP (1) JPS60185297A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61113189A (ja) * 1984-10-12 1986-05-31 Fujitsu Ltd 不揮発性ランダムアクセスメモリ装置
US4800533A (en) * 1986-04-30 1989-01-24 Fujitsu Limited Semiconductor nonvolatile memory device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55101192A (en) * 1979-01-24 1980-08-01 Xicor Inc Method and unit for nonnvolatile memory
JPS5644190A (en) * 1979-08-31 1981-04-23 Xicor Inc Nonvolatile random access memory unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55101192A (en) * 1979-01-24 1980-08-01 Xicor Inc Method and unit for nonnvolatile memory
JPS5644190A (en) * 1979-08-31 1981-04-23 Xicor Inc Nonvolatile random access memory unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61113189A (ja) * 1984-10-12 1986-05-31 Fujitsu Ltd 不揮発性ランダムアクセスメモリ装置
US4800533A (en) * 1986-04-30 1989-01-24 Fujitsu Limited Semiconductor nonvolatile memory device

Also Published As

Publication number Publication date
JPH0379800B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-12-19

Similar Documents

Publication Publication Date Title
US5189641A (en) Non-volatile random access memory device
JP2851757B2 (ja) 半導体装置および半導体記憶装置
US5051951A (en) Static RAM memory cell using N-channel MOS transistors
JPS5952548B2 (ja) 半導体メモリ装置
US6757202B2 (en) Bias sensing in DRAM sense amplifiers
US4799193A (en) Semiconductor memory devices
EP0481532B1 (en) Semiconductor memory device
JPH10106272A (ja) 半導体記憶装置
US9105351B2 (en) Semiconductor memory device including amplifier circuit
JPS58143494A (ja) メモリ・アレイ
KR20030091761A (ko) 집적 장치, 집적 회로 장치, 내장된 메모리를 가지는 집적회로 및 강자성 메모리 셀의 구동 방법
US6404667B1 (en) 2T-1C ferroelectric random access memory and operation method thereof
US7251153B2 (en) Memory
JPS60185297A (ja) 不揮発性ランダムアクセスメモリ装置
JP2585669B2 (ja) 不揮発性メモリー・セル・アレイ
JPH01162296A (ja) Ｄｒａｍ
JPS58128090A (ja) ダイナミツクｉｃメモリ
JPH0415556B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0414435B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN112712844B (zh) 单闸极多次写入非挥发性内存阵列及其操作方法
JPH033315B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH039559B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH039560B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH05291534A (ja) 電荷蓄積素子を有する半導体装置
JP2679718B2 (ja) フローティングゲート型電界効果トランジスタを使用したメモリ回路