JPS60177304A - Optical attenuator - Google Patents

Optical attenuator

Info

Publication number
JPS60177304A
JPS60177304A JP3487584A JP3487584A JPS60177304A JP S60177304 A JPS60177304 A JP S60177304A JP 3487584 A JP3487584 A JP 3487584A JP 3487584 A JP3487584 A JP 3487584A JP S60177304 A JPS60177304 A JP S60177304A
Authority
JP
Japan
Prior art keywords
waveguide
mode
substrate
optical waveguide
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3487584A
Other languages
Japanese (ja)
Inventor
Shiro Ogata
司郎 緒方
Junichi Takagi
高木 潤一
Naohisa Inoue
直久 井上
Masaharu Matano
俣野 正治
Maki Yamashita
山下 牧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Tateisi Electronics Co
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tateisi Electronics Co, Omron Tateisi Electronics Co filed Critical Tateisi Electronics Co
Priority to JP3487584A priority Critical patent/JPS60177304A/en
Publication of JPS60177304A publication Critical patent/JPS60177304A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/126Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a waveguide type optical attenuator which attenuates and annihilates TE mode and can output only the TM mode as output light by forming an optical waveguide projecting on a substrate and forming a metallic film on the side face of the optical waveguide. CONSTITUTION:An optical waveguide 12 is projected and formed on a substrate 1. A metallic film 13 is formed on one side face of the waveguide 12 and a part on the substrate 11. The refractive index of the waveguide 12 is higher than that of the substrate 11 and higher than the refractive index of air. The light made incident on the waveguide 12 from one end thereof propagates therefore in the direction Z in the waveguide 12. The light of the TE mode out of the propagating light is lost and successively annihilated by the metallic film 13 formed on the side face of the waveguide 12. Only the light of the TM mode is therefore taken out of the other end of the waveguide 12.

Description

【発明の詳細な説明】 発明の背景 この発明は、光アテネータ(光減衰器)または光モード
分離器に関する。
BACKGROUND OF THE INVENTION This invention relates to optical attenuators or optical mode separators.

第1図は従来の光アテネータを示している。FIG. 1 shows a conventional optical attenuator.

基板(1)上に光導波層く路)(2)が形成され、この
光導波層(2)の上面に金属膜(3)が形成されている
。光導波層(2)内を7方向に伝播する光には、電界が
Y方向成分のみのTEモードと磁界がY方向成分のみの
TM七−ドとがある。従来の光アテネータでは金属膜(
3)が光導波層(2)の上面(Y−Z面)にあるのでT
Mモードの光の電界方向に金属膜(3)が存在すること
になり、TMモードは金属表面プラズマモードになり、
その大きな10失のために消滅する。この結果、先導波
層(2)からは出力光としてTEモードの光のみが得ら
れる。
An optical waveguide layer (2) is formed on a substrate (1), and a metal film (3) is formed on the upper surface of this optical waveguide layer (2). Light propagating in seven directions within the optical waveguide layer (2) includes a TE mode in which the electric field has only a Y-direction component, and a TM seven-mode in which the magnetic field has only a Y-direction component. Conventional optical attenuators use a metal film (
3) is on the top surface (YZ plane) of the optical waveguide layer (2), so T
The metal film (3) exists in the direction of the electric field of the M mode light, and the TM mode becomes a metal surface plasma mode.
It will disappear because of that big 10 loss. As a result, only TE mode light is obtained as output light from the leading wave layer (2).

しかしながら、このような従来の導波型光アテネータで
はTEモードを消滅さUてT Mモードのみを出力光と
して取り出すことはできなかった。TMモードのみを取
り出そうとすると偏光器を使用する必要があり、そのた
めに光学系が大型とならざるを得なかった。
However, in such a conventional waveguide type optical attenuator, it was not possible to eliminate the TE mode and extract only the TM mode as output light. In order to extract only the TM mode, it is necessary to use a polarizer, which requires a large optical system.

発明の概要 この発明は、TEモードを減衰、消滅さけて出力光とし
て一1’ Mモードのみを得ることのできる導波型光ア
テネータを提供りるbのである。
SUMMARY OF THE INVENTION The present invention provides a waveguide type optical attenuator that can obtain only the 1'M mode as output light by attenuating and eliminating the TE mode.

この発明による光アーj−ネータは、基板上に突出(J
た先導波路が形成され、この光導波路の側面に金属膜が
形成されていることを特徴とする。
The optical J-arnator according to the present invention has a protrusion (J) on the substrate.
The optical waveguide is characterized in that a leading waveguide is formed, and a metal film is formed on the side surface of this optical waveguide.

)に導波路内を伝Jlづ−る一r Eモードの光は光導
波路の側面に形成された金属膜の存在によって浦失し、
光導波路からはT M七−ドの光のみを出力光として取
り出すことができる。基板上に形成された光導波路を利
用しているからこの発明による光アテネータは構造が簡
単でありかつ小型となる。
) The E-mode light propagating inside the waveguide is lost due to the presence of the metal film formed on the side of the optical waveguide.
From the optical waveguide, only the TM7-mode light can be taken out as output light. Since an optical waveguide formed on a substrate is used, the optical attenuator according to the present invention has a simple structure and is small in size.

実施例の説明 第2図において、基板(11)上には光導波路(12)
が突出して形成されている。リッジ(r+dge)型光
導波路である。この光導波路(12)の−側面および基
板(11)lの一部に金属膜(13)l不形成されてい
る。金属膜(13)は光導波路(12)の−側面に形成
されでいればよく、基板(11)十に存在する必要はな
い。
DESCRIPTION OF EMBODIMENTS In FIG. 2, an optical waveguide (12) is provided on a substrate (11).
is formed to protrude. It is a ridge (r+dge) type optical waveguide. A metal film (13) is not formed on the side surface of the optical waveguide (12) and a part of the substrate (11). The metal film (13) only needs to be formed on the negative side of the optical waveguide (12), and does not need to be present on the substrate (11).

先導波路(12)の屈折率は基板(11)のそれよりも
高く、また空気の屈折率よりも八い。したがって、光導
波路(12)にその一端から大川された光は光導波路(
12)内を/方向に伝播する。伝播する光のうち王1三
モードの光は光導波路(12)の側面に形成されている
金属膜(13)によつC損失し、消滅していく。したが
って、光導波路(12)の他端からはTMモードの光の
みを取り出すことができる。
The refractive index of the leading waveguide (12) is higher than that of the substrate (11) and is also higher than that of air. Therefore, the light transmitted from one end of the optical waveguide (12) is transmitted through the optical waveguide (12).
12) Propagate within / direction. Of the propagating light, the 13-mode light undergoes C loss through the metal film (13) formed on the side surface of the optical waveguide (12) and disappears. Therefore, only TM mode light can be extracted from the other end of the optical waveguide (12).

第3図はこのような導波型光アテネータの製造工程の一
例を示している。結晶基板(11)上に不純物の熱拡散
処理などの方法により高屈折をt:4(12)を形成し
、この高屈折層(12)上面にTi等の保護膜(14)
を形成する(第3図(A))。
FIG. 3 shows an example of the manufacturing process of such a waveguide type optical attenuator. A high refractive layer (t:4) (12) is formed on the crystal substrate (11) by a method such as thermal diffusion treatment of impurities, and a protective film (14) of Ti or the like is formed on the upper surface of this high refractive layer (12).
(Fig. 3(A)).

次に保護膜(14)によって光導波路パターンのマスキ
ングを行なう。寸なわら、フオl−エツチング等の技術
により、先導波路と可べき部分のT−i膜(14)のみ
を残し、他の部分のTi膜(14)を除去する。そし−
C1イオンエツチング等の技術により基板(11)のう
らのマスクされていない部分を削り取る。これにJこり
マスク(14)によって覆われた部分のみが突出状に残
り、リッジ型光導波路(12)が形成される。さらに、
光導波路(12)の上面に(他の部分にイ」着してもよ
い)ボジレジストを塗布し、結晶基板(11)の下面よ
り露光り−る。光導波路(12)上面はTi膜(14)
により光が遮断されるから、先導波路(12)上面のみ
にレジメ1115)が残存づる(第3図(B))。
Next, the optical waveguide pattern is masked with a protective film (14). However, by using a technique such as photo-etching, only the leading waveguide and the Ti film (14) in the appropriate portion are left, and the Ti film (14) in other portions is removed. Soshi-
The unmasked portion of the back of the substrate (11) is removed using a technique such as C1 ion etching. Only the portion covered by the J stiffness mask (14) remains in a protruding shape, forming a ridge type optical waveguide (12). moreover,
A positive resist is applied to the upper surface of the optical waveguide (12) (it may be applied to other parts) and exposed from the lower surface of the crystal substrate (11). The top surface of the optical waveguide (12) is a Ti film (14)
Since the light is blocked by the waveguide (12), the regimen 1115) remains only on the upper surface of the leading waveguide (12) (FIG. 3(B)).

アルミニウムなどの金属を基板(11)の右むなめ上方
より蒸着またはスパッタリングして、光導波路(12)
の上面、−側面ip +ら基板(11) J、:、面に
かけて金B膜(13)を形成するく第3図(C))。
A metal such as aluminum is deposited or sputtered from the upper right corner of the substrate (11) to form an optical waveguide (12).
A gold B film (13) is formed over the upper surface, the − side surface of the substrate (11), and the surface of the substrate (FIG. 3(C)).

最後に、リフトオフ法によりレジメ1〜(1!i)を除
去し、さらに選択エツチングなどの技術を用いてTi膜
(14)を取り除く。これにより、光導波路(12)の
上面の金属膜が除去される(第3図(D))。
Finally, regimes 1 to (1!i) are removed using a lift-off method, and the Ti film (14) is further removed using a technique such as selective etching. As a result, the metal film on the upper surface of the optical waveguide (12) is removed (FIG. 3(D)).

第4図は、基板(11)上に突出して形成されIこ光導
波路(12)の両側面に金属膜(13)が形成された例
を示している。このような光アデネータを用いるとTE
モードの減衰率をさらに高めることができる。
FIG. 4 shows an example in which metal films (13) are formed on both sides of an optical waveguide (12) formed protrudingly on a substrate (11). When such an optical adenator is used, the TE
The mode attenuation rate can be further increased.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来例を示す斜視図、第2図はこのWe明の実
施例を承り斜視図、第3図は第2図に示される光アテネ
ータの製造工程の一例を示J…i面(j4成図、第4図
はこの発明の他の実施例を承り斜視図である。 (11)・・・幕板、(12)・・・光導波路、(13
)・・・金属膜。 以上 外4名 第1図 第2[ 1) 第8@ 第4N 3
Fig. 1 is a perspective view showing a conventional example, Fig. 2 is a perspective view of this We Ming embodiment, and Fig. 3 shows an example of the manufacturing process of the optical attenuator shown in Fig. 2. Fig. 4 is a perspective view of another embodiment of the present invention. (11)... Curtain plate, (12)... Optical waveguide, (13)...
)...Metal film. 4 people other than the above Figure 1 Figure 2 [1] 8th @ 4N 3

Claims (1)

【特許請求の範囲】[Claims] 基板子に突出した光導波路が形成され、この先導波路の
側面に金属膜が形成されている光アテネータ。
An optical attenuator in which a protruding optical waveguide is formed on a substrate element, and a metal film is formed on the side surface of this leading waveguide.
JP3487584A 1984-02-24 1984-02-24 Optical attenuator Pending JPS60177304A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3487584A JPS60177304A (en) 1984-02-24 1984-02-24 Optical attenuator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3487584A JPS60177304A (en) 1984-02-24 1984-02-24 Optical attenuator

Publications (1)

Publication Number Publication Date
JPS60177304A true JPS60177304A (en) 1985-09-11

Family

ID=12426318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3487584A Pending JPS60177304A (en) 1984-02-24 1984-02-24 Optical attenuator

Country Status (1)

Country Link
JP (1) JPS60177304A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63229336A (en) * 1987-03-18 1988-09-26 Nec Corp Wave guide type light/sound spectrum analyser
JP2015232631A (en) * 2014-06-10 2015-12-24 Tdk株式会社 Optical waveguide polarizer
CN110095840A (en) * 2019-04-12 2019-08-06 中山大学 A kind of silicon substrate light engraving erosion waveguide polarizer and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4889711A (en) * 1972-02-25 1973-11-22
JPS5168247A (en) * 1974-12-10 1976-06-12 Nippon Telegraph & Telephone DOHAGATA HENKOSOSHI

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4889711A (en) * 1972-02-25 1973-11-22
JPS5168247A (en) * 1974-12-10 1976-06-12 Nippon Telegraph & Telephone DOHAGATA HENKOSOSHI

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63229336A (en) * 1987-03-18 1988-09-26 Nec Corp Wave guide type light/sound spectrum analyser
JP2015232631A (en) * 2014-06-10 2015-12-24 Tdk株式会社 Optical waveguide polarizer
CN110095840A (en) * 2019-04-12 2019-08-06 中山大学 A kind of silicon substrate light engraving erosion waveguide polarizer and preparation method thereof

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