JPS60173887A - トンネル型ジヨセフソン接合素子の製法 - Google Patents

トンネル型ジヨセフソン接合素子の製法

Info

Publication number
JPS60173887A
JPS60173887A JP59023861A JP2386184A JPS60173887A JP S60173887 A JPS60173887 A JP S60173887A JP 59023861 A JP59023861 A JP 59023861A JP 2386184 A JP2386184 A JP 2386184A JP S60173887 A JPS60173887 A JP S60173887A
Authority
JP
Japan
Prior art keywords
superconductor layer
frequency plasma
oxidation treatment
barrier film
tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59023861A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0479153B2 (enrdf_load_stackoverflow
Inventor
Junichi Nakano
純一 中野
Masato Wada
正人 和田
Fumihiko Yanagawa
柳川 文彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59023861A priority Critical patent/JPS60173887A/ja
Publication of JPS60173887A publication Critical patent/JPS60173887A/ja
Publication of JPH0479153B2 publication Critical patent/JPH0479153B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0912Manufacture or treatment of Josephson-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
JP59023861A 1984-02-09 1984-02-09 トンネル型ジヨセフソン接合素子の製法 Granted JPS60173887A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59023861A JPS60173887A (ja) 1984-02-09 1984-02-09 トンネル型ジヨセフソン接合素子の製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59023861A JPS60173887A (ja) 1984-02-09 1984-02-09 トンネル型ジヨセフソン接合素子の製法

Publications (2)

Publication Number Publication Date
JPS60173887A true JPS60173887A (ja) 1985-09-07
JPH0479153B2 JPH0479153B2 (enrdf_load_stackoverflow) 1992-12-15

Family

ID=12122220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59023861A Granted JPS60173887A (ja) 1984-02-09 1984-02-09 トンネル型ジヨセフソン接合素子の製法

Country Status (1)

Country Link
JP (1) JPS60173887A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6473778A (en) * 1987-09-16 1989-03-20 Semiconductor Energy Lab Formation of superconductive material of oxide
JPH0195575A (ja) * 1987-10-07 1989-04-13 Semiconductor Energy Lab Co Ltd 酸化物超伝導材料形成方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM J RES DEVELOP=1980 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6473778A (en) * 1987-09-16 1989-03-20 Semiconductor Energy Lab Formation of superconductive material of oxide
JPH0195575A (ja) * 1987-10-07 1989-04-13 Semiconductor Energy Lab Co Ltd 酸化物超伝導材料形成方法

Also Published As

Publication number Publication date
JPH0479153B2 (enrdf_load_stackoverflow) 1992-12-15

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