JPS60172346A - 電界放出型イオンビ−ム発生装置用液体金属イオン源 - Google Patents
電界放出型イオンビ−ム発生装置用液体金属イオン源Info
- Publication number
- JPS60172346A JPS60172346A JP59027197A JP2719784A JPS60172346A JP S60172346 A JPS60172346 A JP S60172346A JP 59027197 A JP59027197 A JP 59027197A JP 2719784 A JP2719784 A JP 2719784A JP S60172346 A JPS60172346 A JP S60172346A
- Authority
- JP
- Japan
- Prior art keywords
- ion
- alloy
- liquid metal
- source
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010884 ion-beam technique Methods 0.000 title abstract description 14
- 229910001338 liquidmetal Inorganic materials 0.000 title abstract description 10
- 229910002058 ternary alloy Inorganic materials 0.000 claims abstract description 15
- 239000000203 mixture Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 abstract description 10
- 239000000956 alloy Substances 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 6
- 239000000155 melt Substances 0.000 abstract description 4
- 229910052582 BN Inorganic materials 0.000 abstract description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052799 carbon Inorganic materials 0.000 abstract description 2
- 229910052716 thallium Inorganic materials 0.000 abstract description 2
- 229910001370 Se alloy Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 44
- 230000008018 melting Effects 0.000 description 15
- 238000002844 melting Methods 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000006023 eutectic alloy Substances 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910019094 Mg-S Inorganic materials 0.000 description 1
- 229910019397 Mg—S Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/26—Ion sources; Ion guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59027197A JPS60172346A (ja) | 1984-02-17 | 1984-02-17 | 電界放出型イオンビ−ム発生装置用液体金属イオン源 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59027197A JPS60172346A (ja) | 1984-02-17 | 1984-02-17 | 電界放出型イオンビ−ム発生装置用液体金属イオン源 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60172346A true JPS60172346A (ja) | 1985-09-05 |
| JPH0360140B2 JPH0360140B2 (cg-RX-API-DMAC7.html) | 1991-09-12 |
Family
ID=12214360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59027197A Granted JPS60172346A (ja) | 1984-02-17 | 1984-02-17 | 電界放出型イオンビ−ム発生装置用液体金属イオン源 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60172346A (cg-RX-API-DMAC7.html) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4859411A (en) * | 1988-04-08 | 1989-08-22 | Xerox Corporation | Control of selenium alloy fractionation |
| US4894307A (en) * | 1988-11-04 | 1990-01-16 | Xerox Corporation | Processes for preparing and controlling the fractionation of chalcogenide alloys |
| US5002734A (en) * | 1989-01-31 | 1991-03-26 | Xerox Corporation | Processes for preparing chalcogenide alloys |
| JPH0493514U (cg-RX-API-DMAC7.html) * | 1991-01-08 | 1992-08-13 |
-
1984
- 1984-02-17 JP JP59027197A patent/JPS60172346A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4859411A (en) * | 1988-04-08 | 1989-08-22 | Xerox Corporation | Control of selenium alloy fractionation |
| US4894307A (en) * | 1988-11-04 | 1990-01-16 | Xerox Corporation | Processes for preparing and controlling the fractionation of chalcogenide alloys |
| US5002734A (en) * | 1989-01-31 | 1991-03-26 | Xerox Corporation | Processes for preparing chalcogenide alloys |
| JPH0493514U (cg-RX-API-DMAC7.html) * | 1991-01-08 | 1992-08-13 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0360140B2 (cg-RX-API-DMAC7.html) | 1991-09-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |