JPH0414456B2 - - Google Patents
Info
- Publication number
- JPH0414456B2 JPH0414456B2 JP59054340A JP5434084A JPH0414456B2 JP H0414456 B2 JPH0414456 B2 JP H0414456B2 JP 59054340 A JP59054340 A JP 59054340A JP 5434084 A JP5434084 A JP 5434084A JP H0414456 B2 JPH0414456 B2 JP H0414456B2
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- ion
- metal ion
- weight
- liquid metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 18
- 229910001338 liquidmetal Inorganic materials 0.000 claims description 15
- 229910002065 alloy metal Inorganic materials 0.000 claims description 12
- 239000010953 base metal Substances 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 6
- 238000000605 extraction Methods 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 description 42
- 230000008018 melting Effects 0.000 description 17
- 238000002844 melting Methods 0.000 description 17
- 238000010884 ion-beam technique Methods 0.000 description 16
- 229910045601 alloy Inorganic materials 0.000 description 11
- 239000000956 alloy Substances 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000009736 wetting Methods 0.000 description 4
- 229910001325 element alloy Inorganic materials 0.000 description 3
- 239000006023 eutectic alloy Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910002059 quaternary alloy Inorganic materials 0.000 description 3
- 229910015365 Au—Si Inorganic materials 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 2
- 229910021074 Pd—Si Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/26—Ion sources; Ion guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59054340A JPS60200433A (ja) | 1984-03-23 | 1984-03-23 | 電界放出型液体金属イオン源 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59054340A JPS60200433A (ja) | 1984-03-23 | 1984-03-23 | 電界放出型液体金属イオン源 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60200433A JPS60200433A (ja) | 1985-10-09 |
| JPH0414456B2 true JPH0414456B2 (cg-RX-API-DMAC7.html) | 1992-03-12 |
Family
ID=12967872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59054340A Granted JPS60200433A (ja) | 1984-03-23 | 1984-03-23 | 電界放出型液体金属イオン源 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60200433A (cg-RX-API-DMAC7.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62237651A (ja) * | 1986-04-08 | 1987-10-17 | Nec Corp | イオン打ち込み装置用イオン源 |
| CN111534841B (zh) * | 2020-04-14 | 2021-07-30 | 北京航空航天大学 | 一种电场诱导液态金属在金属基底上的可逆润湿及应用 |
-
1984
- 1984-03-23 JP JP59054340A patent/JPS60200433A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60200433A (ja) | 1985-10-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |