JPH0449213B2 - - Google Patents
Info
- Publication number
- JPH0449213B2 JPH0449213B2 JP60080063A JP8006385A JPH0449213B2 JP H0449213 B2 JPH0449213 B2 JP H0449213B2 JP 60080063 A JP60080063 A JP 60080063A JP 8006385 A JP8006385 A JP 8006385A JP H0449213 B2 JPH0449213 B2 JP H0449213B2
- Authority
- JP
- Japan
- Prior art keywords
- ion
- film
- ions
- type
- ion source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010884 ion-beam technique Methods 0.000 claims description 14
- 229910001338 liquidmetal Inorganic materials 0.000 claims description 10
- 229910002059 quaternary alloy Inorganic materials 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 description 49
- 238000000034 method Methods 0.000 description 21
- 239000012535 impurity Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 14
- 238000002513 implantation Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000010587 phase diagram Methods 0.000 description 5
- 229910015365 Au—Si Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910017401 Au—Ge Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 229910000905 alloy phase Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009684 ion beam mixing Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/26—Ion sources; Ion guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60080063A JPS61239538A (ja) | 1985-04-17 | 1985-04-17 | 電界放出型イオンビ−ム発生装置用液体金属イオン源 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60080063A JPS61239538A (ja) | 1985-04-17 | 1985-04-17 | 電界放出型イオンビ−ム発生装置用液体金属イオン源 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61239538A JPS61239538A (ja) | 1986-10-24 |
| JPH0449213B2 true JPH0449213B2 (cg-RX-API-DMAC7.html) | 1992-08-10 |
Family
ID=13707771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60080063A Granted JPS61239538A (ja) | 1985-04-17 | 1985-04-17 | 電界放出型イオンビ−ム発生装置用液体金属イオン源 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61239538A (cg-RX-API-DMAC7.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2890680B2 (ja) * | 1990-05-31 | 1999-05-17 | 株式会社島津製作所 | 半導体素子製造装置 |
| JP2874591B2 (ja) * | 1995-05-16 | 1999-03-24 | 株式会社島津製作所 | 半導体素子製造装置 |
-
1985
- 1985-04-17 JP JP60080063A patent/JPS61239538A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61239538A (ja) | 1986-10-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |