JPH0325008B2 - - Google Patents

Info

Publication number
JPH0325008B2
JPH0325008B2 JP9740685A JP9740685A JPH0325008B2 JP H0325008 B2 JPH0325008 B2 JP H0325008B2 JP 9740685 A JP9740685 A JP 9740685A JP 9740685 A JP9740685 A JP 9740685A JP H0325008 B2 JPH0325008 B2 JP H0325008B2
Authority
JP
Japan
Prior art keywords
thin film
base substrate
ion beam
ion
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP9740685A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61256632A (ja
Inventor
Kyusaku Nishioka
Hiroaki Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60097406A priority Critical patent/JPS61256632A/ja
Publication of JPS61256632A publication Critical patent/JPS61256632A/ja
Publication of JPH0325008B2 publication Critical patent/JPH0325008B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
JP60097406A 1985-05-08 1985-05-08 微細パタ−ン形成方法 Granted JPS61256632A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60097406A JPS61256632A (ja) 1985-05-08 1985-05-08 微細パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60097406A JPS61256632A (ja) 1985-05-08 1985-05-08 微細パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS61256632A JPS61256632A (ja) 1986-11-14
JPH0325008B2 true JPH0325008B2 (cg-RX-API-DMAC7.html) 1991-04-04

Family

ID=14191617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60097406A Granted JPS61256632A (ja) 1985-05-08 1985-05-08 微細パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS61256632A (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2002354455A1 (en) * 2001-12-11 2003-07-09 The New Industry Research Organization Method for ion beam fine patterning of inorganic multilayer resist, and semiconductor device, quantum device, micromachine component and fine structure manufactured by the method
JP5038218B2 (ja) * 2007-05-15 2012-10-03 キヤノン株式会社 ３次元フォトニック結晶の製造方法
JP5264237B2 (ja) * 2007-05-15 2013-08-14 キヤノン株式会社 ナノ構造体およびナノ構造体の製造方法

Also Published As

Publication number Publication date
JPS61256632A (ja) 1986-11-14

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